3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
I
DSS
V
GS
= 0 V, I
D
= −250
mA
V
GS
= 0 V,
V
DS
= −5 V
V
GS
= 0 V,
V
DS
= −16 V
Gate-to-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-Source On Resistance
V
GS(TH)
R
DS(ON)
V
GS
= V
DS
, I
D
= −250
mA
V
GS
= −4.5 V, I
D
= −100 mA
V
GS
= −2.5 V, I
D
= −50 mA
V
GS
= −1.8 V, I
D
= −20 mA
V
GS
= −1.5 V, I
D
= −10 mA
Forward Transconductance
Forward Diode Voltage
CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= −4.5 V, V
DD
= −15 V,
I
D
= −200 mA, R
G
= 2.0
W
37
71
280
171
ns
C
ISS
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V
DS
= −15 V
12.8
2.8
2.0
pF
g
FS
V
SD
V
DS
= −5.0 V, I
D
= −125 mA
V
GS
= 0 V, I
S
= −10 mA
−0.4
2.1
2.7
3.4
4.2
0.35
−0.6
−1.0
−1.0
5.0
6.0
7.0
10.0
S
V
V
W
I
GSS
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
−20
−50
−200
−100
±100
nA
V
nA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±5.0
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
NTND31200PZTAG
Package
XLLGA6
(Pb−Free)
Shipping
†
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NTND31200PZ
TYPICAL CHARACTERISTICS
0.25
−I
D
, DRAIN CURRENT (A)
V
GS
= −2 V to −5 V
−1.8 V
−I
D
, DRAIN CURRENT (A)
0.20
−1.6 V
0.15
−1.4 V
0.20
0.25
V
DS
= −5 V
0.15
0.10
0.10
T
J
= 25°C
0.05
T
J
= −55°C
0
T
J
= 125°C
1.0
1.5
2.0
0.05
0
0
1
2
3
4
−1.2 V
5
0
0.5
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
I
D
= −0.12 A
5.0
Figure 2. Transfer Characteristics
T
J
= 25°C
4.5
4.0
3.5
3.0
V
GS
= −2.5 V
2.5
V
GS
= −4.5 V
2.0
1.5
0.01 0.02 0.03 0.04 0.05
0.06 0.07 0.08 0.09 0.10
−I
D
, DRAIN CURRENT (A)
V
GS
= −1.8 V
V
GS
= −1.5 V
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
V
GS
= −4.5 V
I
D
= −0.1 A
−I
DSS
, LEAKAGE (nA)
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 150°C
100
T
J
= 125°C
T
J
= 85°C
10
1
0.1
0.01
−25
0
25
50
75
100
125
150
0
5
T
J
= 25°C
10
15
20
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NTND31200PZ
TYPICAL CHARACTERISTICS
25
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
t, TIME (ns)
C
ISS
15
1000
V
GS
= −4.5 V
V
DS
= −15 V
I
D
= −0.2 A
C, CAPACITANCE (pF)
20
t
d(off)
t
f
100
t
r
t
d(on)
10
C
OSS
5
C
RSS
0
0
5
10
15
20
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10
1
10
R
G
, GATE RESISTANCE (W)
100
Figure 7. Capacitance Variation
0.010
V
GS
= 0 V
−I
S
, SOURCE CURRENT (A)
0.009
0.008
0.007
T
J
= 125°C
0.006
0.005
0.004
0.003
0.002
0.3
0.4
0.5
T
J
= −55°C
0.6
0.7
0.8
0.9
1.0
0.001
T
J
= 25°C
−I
D
, DRAIN CURRENT (A)
1
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
V
GS
≤
−4.5 V
Single Pulse
T
C
= 25°C
10
ms
100
ms
1 ms
10 ms
0.1
0.01
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
dc
100
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
R
qWJA(t)
, EFFECTIVE TRANSIENT
THERMAL RESISTANCE (°C/W)
1000
Duty Cycle = 0.5
0.2
0.1
100
0.05
0.02
10
0.01
Single Pulse
1
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
0.1
1
10
100
1000
Figure 11. Thermal Response
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4
NTND31200PZ
PACKAGE DIMENSIONS
XLLGA6 0.90x0.65
CASE 713AC
ISSUE O
D
A B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994 .
2. CONTROLLING DIMENSION: MILLIMETERS.
3. POSITIONAL TOERANCE APPLIES TO ALL
SIX LEADS.
DIM
A
A1
b
b2
D
E
e
e1
e2
e3
e4
L
L2
MILLIMETERS
MIN
MAX
0.340 0.440
0.000 0.050
0.200 0.300
0.080 0.180
0.900 BSC
0.650 BSC
0.295 BSC
0.340 BSC
0.300 BSC
0.208 BSC
0.158 BSC
0.215 0.315
0.115 0.215
2X
0.05 C
2X
0.05 C
0.05 C
0.05 C
e2
1
2
3
e3
2X
L
b
2X
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
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Email:
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ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
ÇÇ
ÇÇ
6
PIN ONE
REFERENCE
E
TOP VIEW
A
A1
SIDE VIEW
C
SEATING
PLANE
e1
e
e4
4X
L2
RECOMMENDED
SOLDERING FOOTPRINT*
0.345
PITCH
0.300
PITCH
4X
5
4
4X
b2
0.10
0.05
2X
M
M
C A B
C
NOTE 3
0.300
0.300
BOTTOM VIEW
2X
0.781
1
0.400
4X
0.180
0.340
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
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