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NTND31015NZ

产品描述Dual N-Channel Small Signal MOSFET
文件大小70KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NTND31015NZ概述

Dual N-Channel Small Signal MOSFET

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NTND31015NZ
Small Signal MOSFET
20 V, 200 mA, Dual N−Channel,
0.65 mm x 0.90 mm x 0.4 mm XLLGA−6
Package
www.onsemi.com
Features
Dual N−Channel MOSFET
Offers a Low R
DS(ON)
Solution in the Ultra Small 0.65 mm
x 0.90 mm Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
V
(BR)DSS
R
DS(ON)
MAX
1.5
W
@ 4.5 V
2.0
W
@ 2.5 V
3.0
W
@ 1.8 V
4.5
W
@ 1.5 V
I
D
Max
20 V
200 mA
Small Signal Load Switch
Analog Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Products
D1
D2
G1
G2
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
v
5s
Power Dissipation
(Note 1)
Steady
State
t
v
5s
Pulsed Drain Current
t
p
= 10
ms
I
DM
T
J
,
T
STG
I
S
T
L
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
P
D
Symbol
V
DSS
V
GS
I
D
Value
20
±8
200
140
220
125
166
800
−55 to
150
200
260
mA
°C
mA
°C
4
mW
Unit
V
V
mA
S1
N−Channel
MOSFET
S2
XLLGA6
Case 713AC
PINOUT DIAGRAM
6
D1
S1
1
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
G1
5
G2
D2
2
S2
3
(Bottom View)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width
v300
ms,
duty cycle
v2%
MARKING DIAGRAM
DM
1
D
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
November, 2015 − Rev. 1
Publication Order Number:
NTND31015NZ/D

 
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