MMSF3350
WaveFET™ HDTMOS™
Single N−Channel Field
Effect Transistor
Power Surface Mount Products
WaveFET devices are an advanced series of power MOSFETs
which utilize ON Semiconductor’s latest MOSFET technology
process to achieve the lowest possible on−resistance per silicon area.
They are capable of withstanding high energy in the avalanche and
commutation modes and the drain−to−source diode has a very low
reverse recovery time. WaveFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
•
Characterized Over a Wide Range of Power Ratings
•
Ultralow R
DS(on)
Provides Higher Efficiency and
Extends Battery Life in Portable Applications
•
Logic Level Gate Drive
−
Can Be Driven by
Logic ICs
•
Diode Is Characterized for Use In Bridge Circuits
•
Diode Exhibits High Speed, With Soft Recovery
•
I
DSS
Specified at Elevated Temperature
•
Avalanche Energy Specified
•
Miniature SO−8 Surface Mount Package
−
Saves Board Space
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SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 11 mW
D
G
S
MARKING
DIAGRAM
8
SO−8
CASE 751
Style 12
XXX
A
L
Y
W
XXXXXX
ALYW
1
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
©
Semiconductor Components Industries, LLC, 2006
August, 2006
−
Rev. 3
1
Publication Order Number:
MMSF3350/D
MMSF3350
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain−to−Source Voltage
Drain−to−Gate Voltage
Gate−to−Source Voltage
Gate−to−Source Operating Voltage
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy
−
Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc, L = 20 mH, I
L(pk)
= 10 A, V
DS
= 30 Vdc)
Symbol
V
DSS
V
DGR
V
GS
V
GS
T
J
, T
stg
E
AS
Value
30
30
±
20
±
16
−55
to 150
1000
Unit
Vdc
Vdc
Vdc
Vdc
°C
mJ
POWER RATINGS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain Current
−
Continuous @ T
A
= 25°C
−
Continuous @ T
A
= 100°C
−
Single Pulse (tp
≤
10
ms)
Mounted on 1 inch square
FR−4 or G10 board
V
GS
= 10 Vdc
t
≤
10 seconds
Symbol
I
D
I
D
I
S
P
D
R
qJA
Symbol
Mounted on 1 inch square
FR−4 or G10 board
V
GS
= 10 Vdc
Steady State
I
D
I
D
I
S
P
D
R
qJA
Symbol
Mounted on minimum recommended
FR−4 or G10 board
V
GS
= 10 Vdc
t
≤
10 seconds
I
D
I
D
I
S
P
D
R
qJA
Symbol
Mounted on minimum recommended
FR−4 or G10 board
V
GS
= 10 Vdc
Steady State
I
D
I
D
I
S
P
D
R
qJA
Value
13
9.2
50
3.6
2.7
22.2
46
Unit
Adc
Adc
Adc
Adc
Watts
mW/°C
°C/W
I
DM
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ T
A
= 25°C
Linear Derating Factor
Thermal Resistance
−
Junction−to−Ambient
Parameter
Drain Current
−
Continuous @ T
A
= 25°C
−
Continuous @ T
A
= 100°C
−
Single Pulse (tp
≤
10
ms)
Value
9.4
6.7
50
2.0
1.5
11.8
85
Unit
Adc
Adc
Adc
Adc
Watts
mW/°C
°C/W
I
DM
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ T
A
= 25°C
Linear Derating Factor
Thermal Resistance
−
Junction−to−Ambient
Parameter
Drain Current
−
Continuous @ T
A
= 25°C
−
Continuous @ T
A
= 100°C
−
Single Pulse (tp
≤
10
ms)
Value
10
7.4
50
2.4
1.8
14.3
70
Unit
Adc
Adc
Adc
Adc
Watts
mW/°C
°C/W
I
DM
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ T
A
= 25°C
Linear Derating Factor
Thermal Resistance
−
Junction−to−Ambient
Parameter
Drain Current
−
Continuous @ T
A
= 25°C
−
Continuous @ T
A
= 100°C
−
Single Pulse (tp
≤
10
ms)
Value
7.4
5.2
50
1.2
0.9
7.1
140
Unit
Adc
Adc
Adc
Adc
Watts
mW/°C
°C/W
I
DM
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ T
A
= 25°C
Linear Derating Factor
Thermal Resistance
−
Junction−to−Ambient
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2
MMSF3350
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
Gate−Body Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance
(V
GS
= 10 Vdc, I
D
= 10 Adc)
(V
GS
= 4.5 Vdc, I
D
= 5.0 Adc)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 15 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc)
(V
DD
= 25 Vdc, I
D
= 1.0 Adc,
V
GS
= 10 Vdc,
R
G
= 6.0
W)
(V
DD
= 25 Vdc, I
D
= 1.0 Adc,
V
GS
= 4.5 Vdc,
R
G
= 6.0
W)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
Q
3
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(1)
(I
S
= 2.3 Adc, V
GS
= 0 Vdc)
(I
S
= 2.3 Adc, V
GS
= 0 Vdc, T
J
=
125°C)
(I
S
= 3.5 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
V
SD
−
−
−
−
−
−
0.76
0.58
41
21
20
0.049
1.0
−
−
−
−
−
mC
Vdc
−
−
−
−
−
−
−
−
−
−
−
−
21
50
42
44
12
15
60
44
46
4.5
12.8
9.8
40
90
80
80
20
30
100
80
60
−
−
−
nC
ns
ns
(V
DS
= 24 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
1680
540
185
−
−
−
pF
V
GS(th)
1.0
−
−
−
12
2.0
4.6
9.4
14.4
17
−
−
11
17
−
Vdc
mV/°C
mW
V
(BR)DSS
30
−
−
−
−
33
23
0.003
0.4
2.0
−
−
1.0
10
100
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
nAdc
R
DS(on)
g
FS
Mhos
Reverse Recovery Time
t
rr
t
a
t
b
Q
RR
ns
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperatures.
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3
MMSF3350
TYPICAL ELECTRICAL CHARACTERISTICS
25
14
ID, DRAIN CURRENT (AMPS)
T
J
= 25°C
12
10
8
6
4
−55°C
2
2.0
RDS(on) DRAIN−TO−SOURCE RESISTANCE (OHMS)
,
0
2
2.5
3
3.5
4
ID, DRAIN CURRENT (AMPS)
10 V
6.0 V
4.5 V
4.3 V
4.1 V 3.9 V
V
DS
. 10 V
20
15
V
GS
= 3.7 V
3.5 V
10
3.3 V
5
0
3.1 V
2.9 V
0
1.75
1.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.25
0.5
0.75
1.0
1.25
T
J
= 125°C
25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on) DRAIN−TO−SOURCE RESISTANCE (OHMS)
,
Figure 1. On−Region Characteristics
0.3
I
D
= 5.0 A
T
J
= 25°C
0.2
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
10 V
T
J
= 25°C
V
GS
= 4.5 V
0.1
0
2
3
4
5
6
7
8
9
10
0
5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
20
10
15
I
D
, DRAIN CURRENT (AMPS)
25
Figure 3. On−Resistance versus
Gate−To−Source Voltage
RDS(on) DRAIN−TO−SOURCE RESISTANCE
,
(NORMALIZED)
2.0
V
GS
= 10 V
I
D
= 10 A
IDSS LEAKAGE (nA)
,
1.5
100
1000
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
V
GS
= 0 V
T
J
= 125°C
100°C
10
1.0
0.5
1
25°C
0
−50
−25
0
25
50
75
100
125
150
0.1
5
T
J
, JUNCTION TEMPERATURE (°C)
20
25
10
15
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
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4
Figure 6. Drain−To−Source Leakage
Current versus Voltage
MMSF3350
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (Dt)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (I
G(AV)
) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/I
G(AV)
During the rise and fall time interval when switching a
resistive load, V
GS
remains virtually constant at a level
known as the plateau voltage, V
SGP
. Therefore, rise and fall
times may be approximated by the following:
t
r
= Q
2
x R
G
/(V
GG
−
V
GSP
)
t
f
= Q
2
x R
G
/V
GSP
where
V
GG
= the gate drive voltage, which varies from zero to V
GG
R
G
= the gate drive resistance
and Q
2
and V
GSP
are read from the gate charge curve.
During the turn−on and turn−off delay times, gate current
is not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
t
d(on)
= R
G
C
iss
In [V
GG
/(V
GG
−
V
GSP
)]
t
d(off)
= R
G
C
iss
In (V
GG
/V
GSP
)
4000
C, CAPACITANCE (pF)
3500
3000
2500
2000
1500
1000
500
0
−10
−5
V
GS
0
5
V
DS
C
rss
10
15
20
C
oss
C
iss
V
DS
= 0 V
C
rss
C
iss
V
GS
= 0 V
The capacitance (C
iss
) is read from the capacitance curve
at a voltage corresponding to the off−state condition when
calculating t
d(on)
and is read at a voltage corresponding to the
on−state when calculating t
d(off)
.
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
T
J
= 25°C
25
30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
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