NVTFS4C08N
Power MOSFET
30 V, 5.9 mW, 55 A, Single N−Channel,
m8FL
Features
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVTFS4C08NWF − Wettable Flanks Product
NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Notes 1, 2, 4)
Power Dissipation R
qJA
(Note 1, 2, 4)
Continuous Drain
Current R
qJC
(Note 1,
3, 4)
Power Dissipation
R
qJC
(Note 1, 3, 4)
Pulsed Drain Current
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
,
T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
17
12
3.1
1.6
55
39
31
15
253
−55 to
+175
28
20
260
A
°C
A
mJ
°C
A
W
W
Unit
V
V
A
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V
(BR)DSS
30 V
9.0 mW @ 4.5 V
R
DS(on)
MAX
5.9 mW @ 10 V
55 A
I
D
MAX
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
MARKING DIAGRAM
1
1
WDFN8
(m8FL)
CASE 511AB
4C08
08WF
A
Y
WW
G
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, I
L
= 20 A
pk
, L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code for
NVMTS4C08N
= Specific Device Code of
NVTFS4C08NWF
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State (Drain)
(Notes 1 and 4)
Junction−to−Ambient – Steady State
(Notes 1 and 2)
Symbol
R
qJC
R
qJA
Value
4.9
48
°C/W
Unit
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm
2
2 oz. Cu pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. 1
Publication Order Number:
NVTFS4C08N/D
NVTFS4C08N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
13.8
1.0
10
±100
1.3
5.0
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
0.79
0.66
28.3
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
14.5
13.8
15.3
nC
ns
1.1
V
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
9.0
33
15
4.0
7.0
26
19
3.0
ns
ns
C
ISS
C
OSS
C
RSS
C
RSS
/C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
1113
702
39
0.035
8.4
1.8
3.5
3.3
3.4
18.2
V
nC
nC
pF
g
FS
R
G
T
A
= 25°C
I
D
= 30 A
I
D
= 18 A
4.7
7.2
42
1.0
5.9
9.0
mW
S
W
2.2
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
V
mV/°C
V
DS
= 1.5 V, I
D
= 15 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS4C08N
TYPICAL CHARACTERISTICS
100
80
4V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
T
J
= 25°C
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
V
DS
= 3 V
5.5 V −
90 10 V
80
70
60
50
40
30
20
10
0
4.5 V
4.2 V
I
D
, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
I
D
= 30 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
10
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.80
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.60
1.40
1.20
1.00
0.80
0.60
−50
10
−25
0
25
50
75
100
125
150
175
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVTFS4C08N
TYPICAL CHARACTERISTICS
1800
1600
C, CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0
5
10
C
rss
15
20
25
30
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
10
Q
T
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
4
Q
gs
Q
gd
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
4
6
8
10
12
14
16
18
20
2
0
0
2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
100
t, TIME (ns)
t
r
t
d(off)
10
20
18
16
14
12
10
8
6
4
2
0
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
t
d(on)
t
f
T
J
= 125°C
T
J
= 25°C
1
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
10
ms
10
100
ms
1
V
GS
= 10 V
T
C
= 25°C
2
0.1 650 mm 2 oz Cu Pad
R
DS(on)
Limit
Thermal Limit
Package Limit
0.01
0.1
1
1 ms
10 ms
dc
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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NVTFS4C08N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10
R
qJA(t)
(°C/W)
20%
10%
5%
2%
1%
0.1
Single Pulse
1
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Response
80
I
PEAK
, DRAIN CURRENT (A)
70
60
50
G
FS
(S)
40
30
20
10
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
I
D
(A)
100
T
J(initial)
= 25°C
10
T
J(initial)
= 125°C
1
1.0E−06
1.0E−05
1.0E−04
1.E−03
T
AV
, TIME IN AVALANCHE (s)
Figure 13. G
FS
vs. I
D
Figure 14. Avalanche Characteristics
ORDERING INFORMATION
Device
NVTFS4C08NTAG
NVTFS4C08NWFTAG
NVTFS4C08NTWG
NVTFS4C08NWFTWG
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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