NVTFS4C05N
Power MOSFET
30 V, 3.6 mW, 102 A, Single N−Channel,
m8FL
Features
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVTFS4C05NWF − Wettable Flanks Product
NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Notes 1, 2, 4)
Power Dissipation R
qJA
(Notes 1, 2, 4)
Continuous Drain
Current R
yJC
(Notes 1, 3, 4)
Power Dissipation
R
yJC
(Notes 1, 3, 4)
Pulsed Drain Current
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
,
T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
22
15.7
3.2
1.6
102
72
68
34
433
−55 to
+175
65
88
260
A
°C
A
mJ
°C
W
A
W
Unit
V
V
A
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V
(BR)DSS
30 V
5.1 mW @ 4.5 V
R
DS(on)
MAX
3.6 mW @ 10 V
102 A
I
D
MAX
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
MARKING DIAGRAM
1
1
WDFN8
(m8FL)
CASE 511AB
4C05
05WF
A
Y
WW
G
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
GS
= 10 V, I
L
= 18.8 A, L = 0.5 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code for
NVMTS4C05N
= Specific Device Code of
NVTFS4C05NWF
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Note: Microdot may be in either location)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain) (Notes 1, 3)
Junction−to−Ambient – Steady State
(Notes 1, 2)
Symbol
R
yJC
R
qJA
Value
2.2
47
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values
shown; they are not constants and are valid for the specific conditions noted.
2. Surface−mounted on FR4 board using 650 mm
2
, 2 oz. Cu Pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. 2
Publication Order Number:
NVTFS4C05N/D
NVTFS4C05N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
11.7
1.0
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
1.3
−5.0
2.2
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
I
D
= 30 A
2.9
4.1
68
1.0
3.6
5.1
mW
S
W
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
g
FS
R
G
V
DS
= 1.5 V, I
D
= 15 A
T
A
= 25°C
C
ISS
C
OSS
C
RSS
C
RSS
/C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
1988
1224
71
0.036
14.5
2.9
5.2
5.5
3.1
31
V
nC
nC
pF
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
11
30
20
8.0
8.0
25
26
5.0
ns
ns
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
0.77
0.62
42.4
1.1
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
21.1
21.3
34.4
ns
nC
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS4C05N
TYPICAL CHARACTERISTICS
140
130 10 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
140
130 V
DS
= 5 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5 1.0
T
J
= 25°C
4 V to 6.5 V
I
D
, DRAIN CURRENT (A)
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
1
2
3
4
5
I
D
, DRAIN CURRENT (A)
3.8 V
3.6 V
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.028
0.026
0.024
0.022
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
3.0
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.008
Figure 2. Transfer Characteristics
I
D
= 30 A
T
J
= 25°C
T
J
= 25°C
0.007
0.006
0.005
V
GS
= 4.5 V
0.004
0.003
0.002
10
V
GS
= 10 V
4.0
5.0
6.0
7.0
8.0
9.0
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.9
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
10
0
25
50
75
100
125
150
175
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVTFS4C05N
TYPICAL CHARACTERISTICS
3000
2750
2500
C, CAPACITANCE (pF)
2250
2000
1750
1500
1250
1000
750
500
250
0
C
rss
0
5
10
15
20
25
30
C
iss
C
oss
V
GS
= 0 V
T
J
= 25°C
10
Q
T
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
Q
gs
Q
gd
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
4
8
12
16
20
24
28
32
4
2
0
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
20
18
t
d(off)
t
d(on)
t
r
t
f
10
16
14
12
10
8
6
4
2
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 125°C
T
J
= 25°C
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
0.01 ms
10
V
GS
= 10 V
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
0.1 ms
1 ms
dc
10 ms
100
1
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NVTFS4C05N
TYPICAL CHARACTERISTICS
TRANSIENT THERMAL RESISTANCE (°C/W)
100
Duty Cycle = 50%
10 20%
10%
5%
1
2%
1%
R
qJA
Single Pulse
0.1
R
yJC
Single Pulse
y
JC
, Infinite Heat Sink Assumption
q
JA
, 650 mm
2
, 2 oz Cu Pad, Single
Layer on FR4
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
0.1
1
10
100
1000
0.01
Figure 12. Thermal Response
120
I
PEAK
, DRAIN CURRENT (A)
100
80
G
FS
(S)
60
40
20
0
0
10
20
30
40
I
D
(A)
50
60
70
80
1000
100
T
J(initial)
= 25°C
T
J(initial)
= 85°C
10
1
0.000001
0.00001
0.0001
0.001
T
AV
, TIME IN AVALANCHE (s)
Figure 13. G
FS
vs. I
D
Figure 14. Avalanche Characteristics
ORDERING INFORMATION
Device
NVTFS4C05NTAG
NVTFS4C05NWFTAG
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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