NVMFS6B05N
Power MOSFET
100 V, 8.0 mW, 114 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS6B05NWF − Wettable Flank Option for Enhanced Optical
Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
qJC
(Notes 1, 2,
3)
Power Dissipation
R
qJC
(Notes 1, 2)
Continuous Drain Cur-
rent R
qJA
(Notes 1, 2,
3)
Power Dissipation
R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
100
±16
114
80
165
83
17
12
3.8
1.9
330
−55 to
+ 175
130
125
A
°C
A
mJ
W
A
W
Unit
V
V
A
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V
(BR)DSS
100 V
R
DS(ON)
MAX
8.0 mW @ 10 V
I
D
MAX
114 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 50 A, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
XXXXXX
AYWZZ
D
D
T
L
260
°C
= Assembly Location
= Year
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
0.9
39
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2015
1
October, 2015 − Rev. 0
Publication Order Number:
NVMFS6B05N/D
NVMFS6B05N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 80 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
100
72.8
10
100
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
= 16 V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
2.0
7.91
4.0
V
mV/°C
V
GS
= 10 V
I
D
= 20 A
6.5
8.0
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 25 A
T
J
= 25°C
T
J
= 125°C
0.9
0.8
58
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 25 A
30
28
83
nC
ns
1.2
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 50 V,
I
D
= 25 A, R
G
= 1.0
W
14
43
39
16
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
T
J
= 25°C
V
GS
= 10 V, V
DS
= 50 V; I
D
= 25 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
3100
570
28
44
5.0
14
12
5.0
1.0
V
W
nC
pF
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS6B05N
TYPICAL CHARACTERISTICS
140
V
GS
= 10 V
120
I
D
, DRAIN CURRENT (A)
6.5 V
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
4.0 V
5.5 V
5.0 V
4.5 V
3.0
6.0 V
I
D
, DRAIN CURRENT (A)
7.0 V
120
100
80
60
40
20
0
0
1
2
3
4
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
5
6
7
V
DS
≤
10 V
140
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
20
18
16
14
12
10
8
6
4
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
8.5 9.0 9.5 10
V
GS
, GATE VOLTAGE (V)
I
D
= 20 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
15
14
13
12
11
10
9
8
7
6
5
4
10
15
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 6.0 V
V
GS
= 10 V
20
25
30
35
40
45
50
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−50 −25
1
0
25
50
75
100
125
150
175
I
D
= 20 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
100K
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 150°C
10K
T
J
= 125°C
1K
100
T
J
= 25°C
10
10
20
30
40
50
60
70
80
90
100
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVMFS6B05N
TYPICAL CHARACTERISTICS
C
iss
C, CAPACITANCE (pF)
C
oss
1000
C
rss
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10,000
12
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
Q
g
, TOTAL GATE CHARGE (nC)
T
J
= 25°C
V
DS
= 50 V
I
D
= 25 A
Q
gs
Q
gd
Q
T
100
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
10
1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
100
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DS
= 50 V
I
D
= 25 A
V
GS
= 10 V
t, TIME (ns)
100
t
r
t
d(off)
t
f
t
d(on)
10
50
45
40
35
30
25
20
15
10
5
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.3
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
T
J
= 25°C
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
V
GS
≤
10 V
Single Pulse
T
C
= 25°C
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
500
ms
10
1 ms
10 ms
0.1
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
DS(on)
Limit
Thermal Limit
Package Limit
1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NVMFS6B05N
TYPICAL CHARACTERISTICS
80
G
FS
, SMALL−SIGNAL FORWARD
TRANSFER CONDUCTANCE (S)
I
PEAK
, DRAIN CURRENT (A)
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
90 100
I
D
, DRAIN CURRENT (A)
100
10
25°C
100°C
1
0.0001
0.001
T
AV
, TIME IN AVALANCHE (sec)
0.01
Figure 12. G
FS
vs. I
D
100
50% Duty Cycle
10
R(t) (°C/W)
20%
10%
5%
2%
1%
Figure 13. I
PEAK
vs. T
AV
1
0.1
0.01 Single Pulse
NTMFS6B05N, 650 mm
2
, 2 oz, Cu Single Layer Pad
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 14. Thermal Response
DEVICE ORDERING INFORMATION
Device
NVMFS6B05NT1G
NVMFS6B05NWFT1G
NVMFS6B05NT3G
NVMFS6B05NWFT3G
Marking
6B05N
6B05WF
6B05N
6B05WF
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free, Wettable Flanks)
DFN5
(Pb−Free)
DFN5
(Pb−Free, Wettable Flanks)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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