4. Switching characteristics are independent of operating junction temperatures.
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2
NVGS4111P
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
12
−I
D,
DRAIN CURRENT (AMPS)
11
10
9
8
7
6
5
4
3
2
1
0
0
0.4
0.8
1.2
−5 V
12
−4 V
−I
D,
DRAIN CURRENT (AMPS)
11
10
9
8
7
6
5
4
3
2
1
0
1
25°C
T
J
= −55°C
1.5
2
2.5
3
3.5
4
4.5
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5
100°C
−10V
−4.5 V −4.2 V
−8 V
−6 V
−5.5 V
V
DS
≥
−10 V
−3.8 V
−3.6 V
−3.4 V
−3.2 V
−3 V
T
J
= 25°C
1.6
2
2.4
2.8
3.2
3.6
4
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.1
Figure 2. Transfer Characteristics
0.2
T
J
= 25°C
I
D
= −3.7 A
T
J
= 25°C
V
GS
= −4.5 V
0.05
V
GS
= −10 V
0.1
0
2
3
4
5
6
7
8
9
10
−V
GS,
GATE VOLTAGE (VOLTS)
0
2.0
3.0
−I
D,
DRAIN CURRENT (AMPS)
4.0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.70
1.60
1.50
1.40
1.30
1.20
1.10
V
GS
= 10 V
I
D
= 3.7 A
100000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
−I
DSS,
LEAKAGE CURRENT (nA)
T
J
= 150°C
10000
1.00
0.90
0.80
0.70
−50 −25
0
25
50
75
100
125
150
1000
T
J
= 100°C
100
175
5
T
J
, JUNCTION TEMPERATURE (°C)
15
10
20
25
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
30
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVGS4111P
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
= 25°C
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
1400
C
iss
1300
1200 C
rss
1100
1000
900
800
700
600
500
400
300
C
oss
200
100
V
DS
= 0 V V
GS
= 0 V
C
rss
0
10
0
10
5
5
15
−V
GS
−V
DS
12
QT
V
DS
V
GS
10
8
6
4
2
0
0
1
2
Q
GS
Q
GD
20
C, CAPACITANCE (pF)
C
iss
10
20
25
30
0
3 4 5 6 7 8 9 10 11 12 13 14 15 16
Q
g
, TOTAL GATE CHARGE (nC)
I
D
= −3.7 A
T
J
= 25°C
−GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
100
−I
S
, SOURCE CURRENT (AMPS)
−I D, DRAIN CURRENT (AMPS)
10
V
GS
= 0 V
T
J
= 150°C
10
100
ms
1 ms
1
V
GS
= −20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
1
T
J
= 100°C
T
J
= 25°C
0.1
dc
0.01
0.1
10
1
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
0.1
0.3
T
J
= −55°C
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
R
thja(t)
, EFFECTIVE TRANSIENT THERMAL
RESPONSE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Figure 10. Diode Forward Voltage vs. Current
0.001
Single Pulse
1E−06
1E−05
1E−04
1E−03
1E−02
t, TIME (s)
1E−01
1E+00
1E+01
1E+02
1E+03
0.0001
1E−07
Figure 11. FET Thermal Response
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4
NVGS4111P
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE V
D
H
6
5
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
DIM
A
A1
b
c
D
E
E1
e
L
L2
M
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
2.75
3.00
1.50
1.70
0.95
1.05
0.40
0.60
0.25 BSC
10°
−
L2
E
GAUGE
PLANE
E1
NOTE 5
e
0.05
A1
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ÉÉ
ÉÉ
1
2
3
L
b
M
DETAIL Z
C
SEATING
PLANE
A
c
DETAIL Z
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
3.20
6X
0.95
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
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