NVA4153N, NVE4153N
Small Signal MOSFET
20 V, 952 mA, Single N−Channel
with ESD Protection, SC−75 and SC−89
Features
•
•
•
•
•
Low R
DS(on)
Improving System Efficiency
Low Threshold Voltage, 1.5 V Rated
ESD Protected Gate
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
R
DS(on)
TYP
0.127
W
@ 4.5 V
20 V
0.170
W
@ 2.5 V
0.242
W
@ 1.8 V
0.500
W
@ 1.5 V
3
N−Channel MOSFET
952 mA
I
D
MAX
Applications
•
•
•
•
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
P
D
I
DM
T
J
,
T
STG
I
S
T
L
Symbol
V
DSS
V
GS
I
D
Value
20
±6.0
952
737
361
3.8
−55 to
175
328
260
mW
A
1
3
2
1
Units
V
V
mA
3
1
2
MARKING DIAGRAM &
PIN ASSIGNMENT
SC−75 / SOT−416
CASE 463
2
STYLE 5
3
Drain
XX MG
G
1
Gate
2
Source
Steady State
t
p
=10
ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
°
C
mA
°C
SC−89
CASE 463C
XX
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient − Steady State (Note 1)
SC−75 / SOT−416
SC−89
Symbol
R
qJA
416
400
Value
Units
°C/W
SC−75, SC−89
Gate
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Source
2
Top View
3
Drain
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
June, 2014 − Rev. 0
Publication Order Number:
NVA4153N/D
NVA4153N, NVE4153N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, V
DS
= 16 V
V
DS
= 0 V, V
GS
=
±4.5
V
V
GS
= 0 V, I
D
= 250
mA
20
26
18.4
100
±1.0
V
mV/°C
nA
mA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 4.5 V, I
D
= 600 mA
V
GS
= 2.5 V, I
D
= 500 mA
V
GS
= 1.8 V, I
D
= 350 mA
V
GS
= 1.5 V, I
D
= 40 mA
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DD
= 10 V,
I
D
= 0.2 A, R
G
= 10
W
3.7
4.4
25
7.6
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 4.5 V, V
DS
= 10 V,
I
D
= 0.2 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 16 V
110
16
12
1.82
0.2
0.3
0.42
nC
pF
g
FS
V
DS
= 10 V, I
D
= 400 mA
V
GS
= V
DS
, I
D
= 250
mA
0.45
0.76
−2.15
127
170
242
500
1.4
230
275
700
9500
S
1.1
V
mV/°C
mW
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 200 mA
T
J
= 25°C
T
J
= 125°C
0.67
0.54
1.1
V
2. Pulse Test: pulse width
≤
300ms, duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NVA4153NT1G
NVE4153NT1G
Marking
(XX)
VR
VP
Package
SC−75 / SOT−416
(Pb−Free)
SC−89
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NVA4153N, NVE4153N
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
2.0 V
I
D,
DRAIN CURRENT (AMPS)
V
GS
= 2.6 V to 5.0 V
0.8
0.6
0.4
0.2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.6 V
1.4 V
0
0
0.4
0.8
1.2
1.8 V
I
D,
DRAIN CURRENT (AMPS)
1.0
1.0
0.8
0.6
0.4
T
J
= 125°C
0.2
T
J
= −55°C
1.6
2.0
1.2
V
DS
w
10 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.4
V
GS
= 4.5 V
0.3
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.4
Figure 2. Transfer Characteristics
V
GS
= 2.5 V
0.3
T
J
= 125°C
0.2
T
J
= 25°C
T
J
= −55°C
0.1
0.2
T
J
= 125°C
T
J
= 25°C
0.1
T
J
= −55°C
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
200
T
J
= 25°C
V
GS
= 0 V
C, CAPACITANCE (pF)
160
C
ISS
120
1.7
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
1.3
1.1
0.9
0.7
−50
V
GS
= 4.5 V
I
D
= 0.6 A
80
C
OSS
C
RSS
0
4
8
12
16
20
40
−25
0
25
50
75
100
125
150
175
0
T
J
, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
NVA4153N, NVE4153N
TYPICAL ELECTRICAL CHARACTERISTICS
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
5
I
S
, SOURCE CURRENT (AMPS)
Q
T
4
0.6
V
GS
= 0 V
0.5
0.4
0.3
0.2
0.1
T
J
= 25°C
0
0
0.4
0.8
1.2
1.6
Q
G
, TOTAL GATE CHARGE (nC)
2.0
T
J
= 125°C
3
Q
GS
Q
GD
2
1
0
I
D
= 0.2 A
T
A
= 25°C
0
0.2
0.4
0.6
0.8
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source Voltage vs. Total
Gate Charge
Figure 8. Diode Forward Voltage vs. Current
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
0.1
Figure 9. Normalized Thermal Response
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4
NVA4153N, NVE4153N
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
−E−
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
e
1
−D−
b
3 PL
0.20 (0.008)
M
D
H
E
0.20 (0.008) E
DIM
A
A1
b
C
D
E
e
L
H
E
C
A
L
A1
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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