Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%
3. Switching characteristics are independent of operating junction temperatures
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2
NTR5103N
TYPICAL CHARACTERISTICS
2.0
1.6
1.2
0.8
3.0 V
0.4
0
2.5 V
2.0 V
0
2
4
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1.2
V
GS
= 10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
0.8
3.5 V
0.4
T
J
= 25°C
0
T
J
= 125°C
0
2
T
J
=
−55°C
4
6
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
2.4
V
GS
= 4.5 V
2.0
1.6
T
J
= 25°C
1.2
0.8
0.4
0
T
J
=
−55°C
T
J
= 125°C
T
J
= 85°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
2.4
Figure 2. Transfer Characteristics
V
GS
= 10 V
2.0
1.6
1.2
0.8
0.4
0
T
J
= 125°C
T
J
= 85°C
T
J
= 25°C
T
J
=
−55°C
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.6
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2.2
Figure 4. On−Resistance vs. Drain Current and
Temperature
I
D
= 0.2 A
1.8
I
D
= 250 mA
1.2
I
D
= 75 mA
V
GS
= 4.5 V
V
GS
= 10 V
1.4
0.8
1.0
0.4
2
4
6
8
10
0.6
−50
−25
0
25
50
75
100
125
150
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
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3
NTR5103N
TYPICAL CHARACTERISTICS
40
C
iss
T
J
= 25°C
V
GS
= 0 V
5
4
3
2
1
0
T
J
= 25°C
I
D
= 0.25 A
30
20
C
oss
10
0
C
rss
0
4
8
12
16
20
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
0
0.2
0.4
0.6
0.8
1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
10
V
GS
= 0 V
I
S
, SOURCE CURRENT (A)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1
T
J
= 85°C
0.1
T
J
= 25°C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4
NTR5103N
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
L1
VIEW C
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
_
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10
_
3X
b
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
0.90
3X
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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