NSD070AL
Switching Diode
Features
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current (DC)
Non−Repetitive Peak Forward Current
t = 1.0 s
Symbol
V
R
I
F
I
FSM
Value
70
200
500
Unit
V
mA
mA
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CASE 318
SOT−23
CATHODE
1
3
ANODE
CATHODE
2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
JY MG
G
JY = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
NSD070ALT1G
NSVD070ALT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
October, 2016
−
Rev. 2
1
Publication Order Number:
NSD070AL/D
NSD070AL
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Device Dissipation @ T
A
= 25°C
Junction and Storage Temperature Range
1. FR− 4 = 1.0
0.75
0.062 in.
Symbol
R
qJA
P
D
T
J
, T
stg
Min
−
−
−
Typ
−
−
−
Max
556
225
−65
to +150
Unit
°C/W
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(V
R
= 70 Vdc)
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 70 Vdc, T
J
= 150°C)
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
Reverse Recovery Time
(I
F
= I
R
= 10 mA) (Figure 1)
V
(BR)
I
R
70
−
−
−
−
−
−
−
−
−
−
−
1.0
−
−
−
−
−
−
5.0
80
2.0
900
1000
1100
1250
3.0
V
nA
Symbol
Min
Typ
Max
Unit
C
D
V
F
pF
mV
t
rr
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820
W
+10 V
2.0 k
100
mH
0.1
mF
DUT
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
90%
I
R
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
0.1
mF
t
r
10%
t
p
t
I
F
t
rr
t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
NSD070AL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
L1
VIEW C
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
_
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10
_
3X
b
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
0.90
3X
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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