MAC15A6FP, MAC15A8FP,
MAC15A10FP
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
solid-state relays, motor controls, heating controls and power supplies;
or wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
•
Blocking Voltage to 800 Volts
•
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
Gate Triggering Guaranteed in Four Modes
•
Indicates UL Registered — File #E69369
•
Device Marking: Logo, Device Type, e.g., MAC15A6FP, Date Code
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage
(1)
(T
J
=
−40
to +125°C, Sine Wave 50 to
60 Hz, Gate Open)
MAC15A6FP
MAC15A8FP
MAC15A10FP
On-State RMS Current (T
C
= +80°C)
(2)
Full Cycle Sine Wave 50 to 60 Hz
(T
C
= +95°C)
Peak Nonrepetitive Surge Current
(One Full Cycle Sine Wave,
60 Hz, T
C
= +80°C)
Preceded and followed by rated current
Circuit Fusing (t = 8.3 ms)
Peak Gate Power
(T
C
= +80°C, Pulse Width = 2.0
μs)
Average Gate Power
(T
C
= +80°C, t = 8.3 ms)
Peak Gate Current
(Pulse Width
v
1.0
μsec;
T
C
= 80°C)
Peak Gate Voltage
(Pulse Width
v
1.0
μsec;
T
C
= 80°C)
RMS Isolation Voltage (T
A
= 25°C,
Relative Humidity
p
20%)
( )
Operating Junction Temperature
Storage Temperature Range
Symbol
V
DRM,
V
RRM
Value
Unit
Volts
400
600
800
15
12
I
TSM
150
Amps
Amps
1
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ISOLATED TRIAC (
15 AMPERES RMS
400 thru 800 VOLTS
)
MT2
G
MT1
I
T(RMS)
2
3
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
V
(ISO)
T
J
T
stg
93
20
0.5
2.0
10
1500
−40
to
+125
−40
to
+150
A
2
s
Watts
Watt
Amps
Volts
Volts
°C
°C
1
2
3
ISOLATED TO−220 Full Pack
CASE 221C
STYLE 3
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
ORDERING INFORMATION
Device
MAC15A6FP
MAC15A8FP
MAC15A10FP
Package
ISOLATED TO220FP
ISOLATED TO220FP
ISOLATED TO220FP
Shipping
500/Box
500/Box
500/Box
(1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all T
C
measurements is a point on
the center lead of the package as close as possible to the plastic body.
©
Semiconductor Components Industries, LLC, 2006
Preferred
devices are recommended choices for future use
and best overall value.
August, 2006
−
Rev. 2
1
Publication Order Number:
MAC15A6FP/D
MAC15A6FP, MAC15A8FP, MAC15A10FP
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
R
θJC
R
θCS
R
θJA
T
L
Max
2.0
2.2 (typ)
60
260
Unit
°C/W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
J
= 25°C
T
J
= 125°C
I
DRM
,
I
RRM
—
—
—
—
10
2.0
μA
mA
ON CHARACTERISTICS
Peak On-State Voltage
(1)
(I
TM
=
"21
A Peak
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R
L
= 100 Ohms)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R
L
= 100 Ohms)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Non−Trigger Voltage
(Main Terminal Voltage = Rated V
DRM
, R
L
= 100
Ω,
T
J
= +110°C)
All 4 Quadrants
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current =
"200
mA)
Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 17 A, I
GT
= 120 mA,
Rise Time = 0.1
μs,
Pulse Width = 2
μs)
V
TM
I
GT
—
—
—
—
V
GT
—
—
—
—
V
GD
0.2
I
H
—
—
6.0
—
40
mA
0.9
0.9
1.1
1.4
2.0
2.0
2.0
2.5
Volts
—
—
—
—
50
50
50
75
Volts
—
1.3
1.6
Volts
mA
t
gt
—
1.5
—
μs
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(V
D
= Rated V
DRM
, V
RRM
, I
TM
= 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, T
C
= 80°C)
(1) Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
dv/dt(c)
—
5.0
—
V/μs
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2
MAC15A6FP, MAC15A8FP, MAC15A10FP
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2
−
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
Quadrant IV
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC15A6FP, MAC15A8FP, MAC15A10FP
TYPICAL CHARACTERISTICS
130
30°
60°
90°
125°C
150° to 180°
α
90
80
α
α
= CONDUCTION ANGLE
0
2
4
6
8
10
12
14
16
I
T(RMS),
RMS ON−STATE CURRENT (AMP)
dc
IGTM , GATE TRIGGER CURRENT (NORMALIZED)
3
2
OFF−STATE VOLTAGE = 12 Vdc
ALL MODES
TC, CASE TEMPERATURE (
°
C)
120
110
1
0.7
0.5
100
0.3
−60
−40
−20
0
20
40
60
80
100
120
140
T
J
, JUNCTION TEMPERATURE (°C)
Figure 1. RMS Current Derating
PD(AV), AVERAGE POWER DISSIPATION (WATTS)
20
T
J
= 125°C
16
α
α
8
α
= CONDUCTION ANGLE
i F, INSTANTANEOUS FORWARD CURRENT (AMP)
α
= 180°
120°
dc
90°
60°
30
30°
20
100
70
50
Figure 4. Typical Gate Trigger Current
T
J
= 25°C
125°C
12
4
0
10
7
5
3
2
0
2
4
6
8
10
12
14
16
I
T(RMS),
RMS ON−STATE CURRENT (AMP)
Figure 2. On−State Power Dissipation
VGTM , GATE TRIGGER VOLTAGE (NORMALIZED)
3
2
OFF−STATE VOLTAGE = 12 Vdc
ALL MODES
1
0.7
0.5
1
0.7
0.5
0.3
0.2
0.3
−60
−40
−20
0
20
40
60
80
100
120
140
0.1
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
T
J
, JUNCTION TEMPERATURE (°C)
v
T
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
Figure 3. Typical Gate Trigger Voltage
Figure 5. Maximum On−State Characteristics
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4
MAC15A6FP, MAC15A8FP, MAC15A10FP
3
I H, HOLDING CURRENT (NORMALIZED)
2
GATE OPEN
APPLIES TO EITHER DIRECTION
300
I TSM, PEAK SURGE CURRENT (AMP)
200
1
0.7
0.5
100
70
50
T
C
= 80°C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
1
2
3
NUMBER OF CYCLES
5
7
10
0.3
−60
−40
−20
0
20
40
60
80
100
120 140
30
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Holding Current
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 7. Maximum Nonrepetitive Surge Current
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
Z
θJC(t)
= r(t)
•
R
θJC
1k
2k
5k
10 k
t, TIME (ms)
Figure 8. Thermal Response
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