Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NVJS4151P
TYPICAL ELECTRICAL CHARACTERISTICS
5
4
−I
D
, DRAIN CURRENT (A)
V
GS
=
−1.8
V
V
GS
=
−2.4
V
V
GS
=
−2.0
V
V
GS
=
−2.8
V to 6.0 V
2
.
T
J
= 25°C
−I
D
, DRAIN CURRENT (A)
4
3
2
1
0
V
DS
w
−10
V
3
V
GS
=
−1.6
V
V
GS
=
−1.4
V
1
V
GS
=
−1.0
V
0
0
2
4
V
GS
=
−1.2
V
6
8
0
1
2
3
4
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
RDS
(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
RDS
(on)
, DRAIN−TO−SOURCE RESISTANCE
(W)
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
=
−3.3
A
T
J
= 25°C
0.6
0.5
0.4
0.3
0.2
0.1
0
1
Figure 2. On−Region Characteristics
T
J
= 25°C
V
GS
=
−1.8
V
V
GS
=
−2.5
V
V
GS
=
−4.5
V
2
3
−I
D
, DRAIN CURRENT (A)
4
5
Figure 3. On−Resistance versus
Gate−to−Source Voltage
1.7
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
1.3
1.1
0.9
0.7
−50
−25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
V
GS
=
−4.5
V
I
D
=
−2.9
A
−I
DSS
, LEAKAGE (nA)
10000
100000
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
100
0
4
8
12
16
20
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NVJS4151P
TYPICAL ELECTRICAL CHARACTERISTICS
C, CAPACITANCE (pF)
1000
C
ISS
750
500
250
0
0
4
8
12
V
GS
= 0 V
T
J
= 25°C
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
5
Q
T
4
V
DS
3
2
Q
gs
1
0
0
2
4
6
8
10
Q
G
, TOTAL GATE CHARGE (nC)
Q
gd
I
D
=
−3.3
A
T
J
= 25°C
V
GS
15
12
9
6
3
0
12
16
20
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
3
10000
−I
S
, SOURCE CURRENT (A)
t
f
t
d(off)
t
r
t
d(on)
2.5
2
1.5
1
0.5
0
V
GS
= 0 V
T
J
= 25°C
t, TIME (ns)
1000
100
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
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4
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1250
NVJS4151P
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
A
D
5
4
H
GAGE
PLANE
6
E
1
2X
2
3
E1
L2
L
DETAIL A
aaa C
bbb H D
2X 3 TIPS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
INCHES
NOM MAX
−−−
0.043
−−−
0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
e
B
TOP VIEW
6X
b
ddd
A2
A
M
C A-B D
DETAIL A
6X
ccc C
SIDE VIEW
A1
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
0.30
6X
0.66
6X
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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