NTSB40200CTG,
NTSJ40200CTG
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low V
F
= 0.53 V at I
F
= 5 A
Features
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•
Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These Devices are Pb−Free and Halogen Free/BFR Free
VERY LOW FORWARD
VOLTAGE, LOW LEAKAGE
SCHOTTKY BARRIER
RECTIFIERS 40 AMPERES,
200 VOLTS
PIN CONNECTIONS
1
2, 4
3
Typical Applications
•
Switching Power Supplies including Telecom AC to DC Power
•
•
•
•
Stages, LED Lighting and ATX
High Voltage DC−DC Converters
Freewheeling and OR−ing Diodes
Output Rectifier in Welding Power Supplies
Industrial Automation
1
2
3
4
Mechanical Characteristics
•
Case: Epoxy, Molded
•
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
TO−220FP
CASE 221AH
D2PAK
CASE 418B
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
©
Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. 1
Publication Order Number:
NTSB40200CT/D
NTSB40200CTG, NTSJ40200CTG
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 125°C) NTSB40200CTG Per device
(Rated V
R
, T
C
= 130°C) NTSB40200CTG Per diode
(Rated V
R
, T
C
= 65°C) NTSJ40200CTG Per device
(Rated V
R
, T
C
= 42°C) NTSJ40200CTG Per diode
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 115°C) NTSB40200CTG Per device
(Rated V
R
, Square Wave, 20 kHz, T
C
= 125°C) NTSB40200CTG Per diode
(Rated V
R
, Square Wave, 20 kHz, T
C
= 40°C) NTSJ40200CTG Per device
(Rated V
R
, Square Wave, 20 kHz, T
C
= 25°C) NTSJ40200CTG Per diode
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature
Storage Temperature
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
I
FSM
T
J
T
stg
I
FRM
80
40
40
40
250
−55 to +150
−55 to +150
3A
M4
A
°C
°C
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
40
20
20
20
A
Value
200
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Typical Thermal Resistance
Junction−to−Case Per Diode
Junction−to−Case Per Device
Junction−to−Ambient Per Device
R
qJC
R
qJA
1.29
0.79
40
6.94
6.05
105
Symbol
NTSB40200CTG
NTSJ40200CTG
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Instantaneous Forward Voltage (Note 1)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 10 A, T
J
= 25°C)
(I
F
= 15 A, T
J
= 25°C)
(I
F
= 20 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
(I
F
= 10 A, T
J
= 125°C)
(I
F
= 15 A, T
J
= 125°C)
(I
F
= 20 A, T
J
= 125°C)
Instantaneous Reverse Current (Note 1)
(V
R
= 180 V, T
J
= 25°C)
(Rated dc Voltage, T
J
= 25°C)
(V
R
= 180 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
3
5
5.3
7
−
100
−
30
Symbol
V
F
0.68
0.74
0.79
0.84
0.53
0.60
0.64
0.68
−
−
−
1.45
−
−
−
0.80
mA
mA
mA
mA
Typ
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%
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2
NTSB40200CTG, NTSJ40200CTG
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
100
T
A
= 125°C
10
10
T
A
= 125°C
T
A
= 150°C
T
A
= 150°C
1
T
A
= 25°C
1
T
A
= 25°C
T
A
= −55°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
A
= −55°C
0.1
0.00
0.40
0.80
1.20
1.60
2.00
2.40
0.1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−01
T
A
= 150°C
T
A
= 125°C
Figure 2. Maximum Instantaneous Forward
Characteristics
T
A
= 150°C
T
A
= 125°C
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
0
20
1.E−02
1.E−03
1.E−04
T
A
= 25°C
T
A
= 25°C
1.E−05
1.E−06
T
A
= −55°C
T
A
= −55°C
40
60
80
100 120 140 160 180 200
1.E−07
0
20
40
60
80
100 120 140 160 180 200
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
10k
C, JUNCTION CAPACITANCE (pF)
Figure 4. Maximum Reverse Characteristics
T
J
= 25°C
1k
100
10
1
10
V
R
, REVERSE VOLTAGE (V)
100
Figure 5. Typical Junction Capacitance
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3
NTSB40200CTG, NTSJ40200CTG
TYPICAL CHARACTERISTICS
40
R
qJC
= 1.29°C/W
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
DC
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
Square Wave
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
Square Wave
DC
80
R
qJC
= 0.79°C/W
T
C
, CASE TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
Figure 6. Current Derating per Diode
(NTSB40200CT)
Figure 7. Current Derating per Device
(NTSB40200CT)
40
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
Square Wave
DC
R
qJC
= 6.94°C/W
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
DC
R
qJC
= 6.05°C/W
Square Wave
T
C
, CASE TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
Figure 8. Current Derating per Diode
(NTSJ40200CTG)
60
55
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
50
45
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
I
PK
/I
AV
= 20
I
PK
/I
AV
= 10
Figure 9. Current Derating per Device
(NTSJ40200CTG)
I
PK
/I
AV
= 5
Square Wave
dc
T
J
= 150°C
35
40
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 10. Forward Power Dissipation
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4
NTSB40200CTG, NTSJ40200CTG
TYPICAL CHARACTERISTICS
100
50%
10 20%
10%
5%
1 2%
1%
0.1
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
R
qJA
= 40°C/W
0.01
Single Pulse
Psi Tab−A
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.001
t, PULSE TIME (sec)
Figure 11. Typical Transient Thermal Response per Device (NTSB40200CTG)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
10
50%
20%
1 10%
5%
0.1
2%
1%
R
qJC
= 6.05°C/W
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 12. Typical Transient Thermal Response per Device (NTSJ40200CTG)
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