IDTF1653NLGI
Datasheet
ZIF/CIF Modulator
600MHz to 2900MHz
G
ENERAL
D
ESCRIPTION
This document describes specifications for the
F1653NLGI I/Q Modulator implementing Zero-
Distortion
TM
technology for low power consumption with
improved ACLR. This device interfaces directly to a high
performance dual DAC.
F
EATURES
Power Gain = 3dB
Direct 100Ω differential drive from Tx DAC
< 590mW Power Consumption
-159 dBm/Hz Output Noise
-161 dBc/Hz Internal LO Path Noise
IP2
O
= +64 dBm @ 2GHz
IP3
O
= +36 dBm @ 2GHz
Excellent native LO and image suppression
600 MHz input 1dB Bandwidth
600 MHz to 2900 MHz RF BW
Fast Settling for TDD (< 200 nsec)
3.3V Single Power Supply
LO port can be driven single ended or
differential
4mm x 4mm, 24-pin TQFN package
C
OMPETITIVE
A
DVANTAGE
In typical multi-mode, multi-carrier basestation
transmitters the modulator has limited linearity and high
power consumption which penalizes the system ACLR
and system Power consumptions budgets in a Digital-
Pre-Distortion environment.
The IDTF1653 is designed to eliminate these penalties by
embedding Zero-Distortion
TM
technology into the device
such that very high IP3 and IP2 are achieved with
minimal current draw.
Power consumption
45%
IM3 Distortion
14 dB
P
ART
# M
ATRIX
Part#
F1650
F1653
RF freq
Range
600 – 2400
600 – 2900
IP2
O
+60
dBm
+64
dBm
Power
Cons.
587
mW
587
mW
IP3
O
+36
dBm
+36
dBm
Noise
-158
dBm/Hz
-159
dBm/Hz
D
EVICE
B
LOCK
D
IAGRAM
0
90
TM
Zero-Distortion
TM
O
RDERING
I
NFORMATION
Omit IDT
prefix
0.8 mm height
package
Tape &
Reel
IDTF1653NLGI8
RF product Line
Green
Industrial
Temp range
Zero-Distortion
TM
Modulator
1
RevO, April 2015
IDTF1653NLGI
Datasheet
ZIF/CIF Modulator
600MHz to 2900MHz
A
BSOLUTE
M
AXIMUM
R
ATINGS
VDD to GND
STBY
BB_I+, BB_I-, BB_Q+, BB_Q-
LO_IN
RF_OUT
Continuous Power Dissipation
θ
JA
(Junction – Ambient)
θ
JC
(Junction – Case)
The Case is defined as the exposed paddle
Operating Temperature Range (Case Temperature)
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10s)
-0.3V to +3.6V
-0.3V to (VDD + 0.3V)
-0.3V to 1.8V
-0.3V to 0.3V
(VDD-0.35V) to (VDD-0.05V)
1.5W
+45°C/W
+2.5°C/W
T
CASE
= -40°C to +105°C
150°C
-65°C to +150°C
+260°C
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability
Zero-Distortion
TM
Modulator
2
RevO, April 2015
IDTF1653NLGI
Datasheet
ZIF/CIF Modulator
600MHz to 2900MHz
IDTF1653 R
ECOMMENDED
O
PERATION
C
ONDITIONS
Parameter
Supply Voltage(s)
Operating Temperature
LO Freq Range
BB Common Mode
Voltage
Symbol Comment
V
DD
T
CASE
F
LO
V
CM
All V
DD
pins
Case Temperature
LO power -3dBm to +5dBm
T
CASE
= -40C to +105C
V
DD
= 3.3 V
LO level = 0dBm
min
3.15
-40
600
0.1
0
DC
typ
3.30
25
max
3.45
+105
2900
units
V
deg C
MHz
V
Vpeak
MHz
0.25
0.8
1
600
BB input voltage
compliance range
BB Freq Range
F
BB
For each BB pin
F
LO
= 1950 MHz, BB_IQ = 200 mVp-p
P
RF
degrades < 1 dB
Zero-Distortion
TM
Modulator
3
RevO, April 2015
IDTF1653NLGI
Datasheet
ZIF/CIF Modulator
600MHz to 2900MHz
IDTF1653 S
PECIFICATION
See application circuit. Typical values are measured at V
DD
= +3.3V, F
LO
= 1950 MHz, P
LO
= 0 dBm, T
CASE
=
+25°C, STBY = GND, BB_IQ frequency = 49, 50 MHz, BB_I&Q levels = 200 mVp-p each (-13dBm and 14 dB
backoff from 1V DAC compliance), I & Q = 0.250V common-mode bias unless otherwise noted.
Parameter
Logic Input High
Logic Input Low
Logic Current
Supply Current (ON)
Supply Current (STBY)
LO Power
BB Input Resistance
(Differential)
LO port Impedance
RF port Impedance
Power Gain
Output IP3 @ 850 MHz
Output IP3 @ 2.00 GHz
Output IP3 @ 2.85 GHz
Output IP2 @ 850 MHz
Output IP2 @ 2.00 GHz
Output IP2 @ 2.85 GHz
Turn on time
Turn off time
LO
(Carrier)
Suppression
Sideband (Image) Suppression
Symbol Comment
V
IH
V
IL
I
IH,
I
IL
I
SUPP
I
STBY
P
LO
R
BB
Z
LO
Z
RF
G
IP3
O1
IP3
O2
IP3
O3
IP2
O1
IP2
O
IP3
O2
P
ON
P
OFF
LO
supp
SS
P1dB
O
NSD
Φ
N_LO
LO = 800 MHz
LO = 1950 MHz
LO = 2800 MHz
LO = 800 MHz
Differential baseband input
min
1.07
-100
typ
max
0.68
+1
190
1
5
+5
units
V
V
μA
mA
mA
dBm
Ω
Ω
Ω
For STBY Pin
For STBY Pin
For STBY Pin
Total V
DD
Total V
DD
, STBY = V
IH
178
2.8
-3
113
50
50
2.0
3.0
37
30
36
31
65
58
2
64
63
175
600MHz to 2900MHz
Freq = 100 MHz
Single Ended (RL < -10dB)
Can be driven differentially
Single Ended (RL < -10dB)
4.0
dB
dBm
LO = 1950 MHz
Differential baseband input
dBm
LO = 2800 MHz
Differential baseband input
STBY = low to 90% final
output power
STBY = high to initial output
power -30dB
Native, Uncorrected
F
LO
= 1950 MHz
nsec
26
-39
-34
15
-157
-159
-161
-30
-30
dBm
dBc
dBm
dBm/Hz
dBc/Hz
Native, Uncorrected
F
LO
= 1950 MHz
Differential baseband input
Output P1dB
Output Noise
LO Path Noise (internal)
Output Compression
10 MHz offset from LO
BB I&Q levels = 0 V
P-P
+10 MHz offset
S
PECIFICATION
N
OTES
:
1 – Items in min/max columns in
bold italics
are Guaranteed by Test
2 – All other Items in min/max columns are Guaranteed by Design Characterization
Zero-Distortion
TM
Modulator
4
RevO, April 2015
IDTF1653NLGI
Datasheet
ZIF/CIF Modulator
600MHz to 2900MHz
T
YPICAL
O
PERATING
C
ONDITIONS GRAPHS
Unless otherwise noted, the following conditions apply:
Baseband I&Q levels = 200 mV
PP
each (-13 dBm / Channel / Tone)
Baseband I&Q tones = 49, 50 MHz
Low Side Injection
T
AMB
= 25C, V
CC
= 3.30 V, LO Power = 0 dBm
V
CM
= 0.250 Volts
Flo = 1.95GHz unless otherwise specified
EVKit RF output Trace and Connector Losses De-Embedded
EVkit RF output loss (Trace + Connector)
0.0
-0.1
-0.2
Output Loss (dB)
-0.3
-0.4
-0.5
-0.6
85degC /
-45degC /
25degC /
-0.7
-0.8
0.6
1.0
100degC /
1.4
1.8
2.2
2.6
3.0
3.4
3.8
RF Frequency (GHz)
Zero-Distortion
TM
Modulator
5
RevO, April 2015
Microchip MCU
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