F1423
Datasheet
TX Differential Input RF Amplifier
G
ENERAL
D
ESCRIPTION
The F1423 is a 600 MHz to 3000 MHz TX differential
input / single-ended output RF amplifier used in
transmitter applications.
The F1423 TX Amp provides 13.1 dB gain with
+41.8 dBm OIP3 and 5.1 dB noise figure at 2000 MHz.
This device uses a single 5 V supply and 120 mA of I
CC
.
This device is packaged in a 4mm x 4mm, 24-pin Thin
QFN with 50 ohm differential RF input and 50 ohm
single ended RF output impedances for ease of
integration into the signal-path.
600 MHz to 3000 MHz
F
EATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
Broadband 600 MHz – 3000 MHz
13.1 dB typical gain @ 2000 MHz
5.1 dB NF @ 2000 MHz
+41.8 dBm OIP3 @ 2000 MHz
+21.5 dBm output P1dB @ 2000 MHz
Single 5 V supply voltage
I
CC
= 120 mA
Up to +105 °C T
CASE
operating temperature
50 differential input impedance
50 single ended output impedance
Positive gain slope for board loss
compensation
Standby mode for power savings
4 mm x 4 mm, 24-pin TQFN package
C
OMPETITIVE
A
DVANTAGE
In typical Base Stations, RF Amplifiers are used in the
TX traffic paths to drive the transmit power amplifier.
The F1423 TX Amplifier offers very high reliability due
to its construction using silicon die in a QFN package.
The F1423 includes a broadband differential input to
accept AC-coupled signals directly from a balanced
modulator or RF DAC architecture.
F
UNCTIONAL
B
LOCK
D
IAGRAM
RFOUT
RFIN
A
PPLICATIONS
•
•
•
•
•
•
•
•
Multi-mode, Multi-carrier Transmitters
GSM850/900 Base Stations
PCS1900 Base Stations
DCS1800 Base Stations
WiMAX and LTE Base Stations
UMTS/WCDMA 3G Base Stations
PHS/PAS Base Stations
Public Safety Infrastructure
STBY
BAND
SEL
O
RDERING
I
NFORMATION
Tape &
Reel
F1423NBGI8
RF Product Line
Green
F1423, Rev O 11/6/2015
1
© 2015 Integrated Device Technology, Inc.
F1423
A
BSOLUTE
M
AXIMUM
R
ATINGS
Parameter
V
CC
to GND
STBY, Band_Sel
RBIAS1
RBIAS2
RFIN+, RFIN-, Voltage
1
RFIN+, RFIN-, Current
1
RFOUT externally applied DC voltage
RF Differential Input Power
(applied for 24 hours maximum)
Continuous Power Dissipation
Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10s)
ElectroStatic Discharge – HBM
(JEDEC/ESDA JS-001-2014)
ElectroStatic Discharge – CDM
(JESD 22-C101F)
Symbol
V
CC
V
Cntl
I
RB1
I
RB2
V
RFin
I
RFin
V
RFout
P
in
P
diss
T
j
T
st
-65
-0.02
-5
V
CC
- 0.15
Min
-0.3
-0.3
Max
+5.5
V
CC
+ 0.25
+1.5
+0.8
+0.02
+5
V
CC
+ 0.15
+22
1.5
150
150
260
Class 2
(2000 V)
Class C3
(1000 V)
Units
V
V
mA
mA
V
mA
V
dBm
W
°C
°C
°C
Note 1: The RFIN+ and RFIN- pins connect to an internal balun that presents a very low impedance to ground.
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
P
ACKAGE
T
HERMAL AND
M
OISTURE
C
HARACTERISTICS
θ
JA
(Junction – Ambient)
θ
JC
(Junction – Case) [The Case is defined as the exposed paddle]
Moisture Sensitivity Rating (Per J-STD-020)
40 °C/W
4 °C/W
MSL1
Zero-Distortion
TM
, TX Amplifier
2
Rev O 11/6/2015
F1423
F1423 R
ECOMMENDED
O
PERATING
C
ONDITIONS
Parameter
Supply Voltage(s)
Operating Temperature Range
RF Frequency Range
RF Source Impedance
RF Load Impedance
Symbol
V
CC
T
CASE
F
RF
Z
RFI
Z
RFO
F
RF_LB
RF Frequency Range
F
RF_MB
F
RF_HB
F
RF_BB
Conditions
All V
CC
pins
Case Temperature
Operating Range
Differential
Single Ended
RF Band Designation
Low-band
Mid-band
High-band
Broad-band
2
Min
4.75
-40
600
Typ
Max
5.25
+105
3000
1
Units
V
°C
MHz
50
50
600
1400
2100
600
1100
2100
3000
1
3000
1
MHz
Note 1: Though device linearity is specified over the range from 700 MHz to 2700 MHz, gain flatness up to 3000 MHz
is specified in the high-band and broadband tables to account for extended DPD bandwidth requirements.
Note 2: To optimize RF performance, a different output match will be used for each of the 4 RF bands listed (see
Table 2). In addition, different value amplifier bias resistors will be used to optimize performance in each of
the 4 bands.
Rev O 11/6/2015
3
Zero-Distortion
TM
, TX Amplifier
F1423
F1423 S
PECIFICATION
- G
ENERAL
See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, V
CC
= +5.0 V, T
C
= +25 °C.
Parameter
Logic Input High
Logic Input Low
Logic Current
Symbol
V
IH
V
IL
I
STBY
I
BAND
I
CC_LB
I
CC_MB
I
CC_HB
I
CC_BB
I
CC_STBY
T
ON
T
OFF
Condition
Min
Typ
Max
Units
V
µA
1.1
STBY pin
Band_Sel pin
Low-band bias setting
Mid-band bias setting
High-band bias setting
Broad-band bias setting
STBY = 5V
50% STBY to RF output
settled to within ±0.5dB
50% STBY to DC standby
current settled to within
±2mA of final I
CC
value
-10
-10
103
120
120
120
0.8
1
0.63
+10
+10
Supply Current
3
mA
Standby Current
Power ON switching time
135
1
1.0
mA
µs
Power OFF switching time
1
µs
Note 1: Items in min/max columns in
bold italics
are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: Use external resistors to set amplifier bias currents to optimize device linearity. See Table 2.
Zero-Distortion
TM
, TX Amplifier
4
Rev O 11/6/2015
F1423
F1423 S
PECIFICATION
– L
OW
-B
AND
See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, V
CC
= +5.0 V, T
C
= +25 °C, F
RF
= 700 MHz, Pout = +7 dBm, R8 =2.1 kΩ, R9 =9.1 kΩ, C1 = 9 pF,
Rsource = 50 Ω differential, Rload = 50 Ω single-ended, Band_Sel = open, EVKit trace connector and transformer
losses are de-embedded.
Parameter
RF Input Return Loss
RF Output Return Loss
Common Mode Rejection
Gain
Gain Flatness
Gain Ripple
Noise Figure
3
Output Third Order
Intercept Point
3
Output 1dB Compression
3
Symbol
RFIN
RL_LB
RFOUT
RL_LB
CMRR
LB
G
LB
G
FLAT_LB
G
RIPPLE_LB
NF
LB
OIP3
LB
OP1dB
LB
Any 400 MHz BW from
700 MHz to 1100 MHz
In any 20 MHz range over
RF Band
T
case
= +105 °C
Pout = +4 dBm/tone
5 MHz tone separation
700 MHz to 1100 MHz
Condition
Min
Typ
17
12.8
20.7
Max
Units
dB
dB
dB
12.0
1
12.6
0.4
±0.04
4.5
5.4
13.2
dB
dB
dB
dB
dBm
dBm
39
2
20
42.5
21.1
F1423 S
PECIFICATION
– M
ID
-B
AND
See F1423 Typical Application Circuit Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, V
CC
= +5.0 V, T
C
= +25 °C, F
RF
= 2000 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 9 pF,
Rsource = 50 Ω differential, Rload = 50 Ω single-ended, Band_Sel = GND, EVKit trace connector and transformer
losses are de-embedded.
Parameter
RF Input Return loss
RF Output Return Loss
Common Mode Rejection
Gain
Gain Flatness
Gain Ripple
Noise Figure
3
Output Third Order
Intercept Point
3
Output 1dB Compression
3
Symbol
RFIN
RL_MB
RFOUT
RL_MB
CMRR
MB
G
MB
G
FLAT_MB
G
RIPPLE_MB
NF
MB
OIP3
MB
OP1dB
MB
Any 400MHz BW from
1400 MHz to 2100 MHz
In any 20 MHz range over
RF Band
T
case
= +105 °C
Pout = +4 dBm/tone
5MHz tone separation
1400 MHz to 2100 MHz
Condition
Min
Typ
15
16.5
19.0
Max
Units
dB
dB
dB
12.5
1
13.1
0.17
±0.01
5.1
5.8
13.7
dB
dB
dB
dB
dBm
dBm
38.8
2
20.3
41.8
21.5
Note 1: Items in min/max columns in
bold italics
are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: Measured using external 1:1 transformer at the RF input.
Rev O 11/6/2015
5
Zero-Distortion
TM
, TX Amplifier
微控制器 MCU
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