Dual Low-Noise High-Speed Audio Operational Amplifier 8-SOIC 0 to 70
| 参数名称 | 属性值 |
| Brand Name | Texas Instruments |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 零件包装代码 | SOIC |
| 包装说明 | SOIC-8 |
| 针数 | 8 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Factory Lead Time | 1 week |
| Samacsys Confidence | 3 |
| Samacsys Status | Released |
| Samacsys PartID | 2606 |
| Samacsys Pin Count | 8 |
| Samacsys Part Category | Integrated Circuit |
| Samacsys Package Category | Small Outline Packages |
| Samacsys Footprint Name | D (R-PDSO-G8) |
| Samacsys Released Date | 2015-04-16 09:48:08 |
| Is Samacsys | N |
| 放大器类型 | OPERATIONAL AMPLIFIER |
| 架构 | VOLTAGE-FEEDBACK |
| 最大平均偏置电流 (IIB) | 0.8 µA |
| 25C 时的最大偏置电流 (IIB) | 0.8 µA |
| 最小共模抑制比 | 70 dB |
| 标称共模抑制比 | 100 dB |
| 频率补偿 | YES |
| 最大输入失调电流 (IIO) | 0.15 µA |
| 最大输入失调电压 | 4000 µV |
| JESD-30 代码 | R-PDSO-G8 |
| JESD-609代码 | e4 |
| 长度 | 4.9 mm |
| 低-偏置 | NO |
| 低-失调 | NO |
| 微功率 | NO |
| 湿度敏感等级 | 1 |
| 负供电电压上限 | -22 V |
| 标称负供电电压 (Vsup) | -15 V |
| 功能数量 | 2 |
| 端子数量 | 8 |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOP |
| 封装等效代码 | SOP8,.25 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 包装方法 | TUBE |
| 峰值回流温度（摄氏度） | 260 |
| 功率 | YES |
| 电源 | +-5/+-15/10/30 V |
| 可编程功率 | NO |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.75 mm |
| 标称压摆率 | 9 V/us |
| 最大压摆率 | 8 mA |
| 供电电压上限 | 22 V |
| 标称供电电压 (Vsup) | 15 V |
| 表面贴装 | YES |
| 技术 | BIPOLAR |
| 温度等级 | COMMERCIAL |
| 端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 标称均一增益带宽 | 10000 kHz |
| 最小电压增益 | 10000 |
| 宽带 | NO |
| 宽度 | 3.91 mm |
| Base Number Matches | 1 |
| 器件名 | 厂商 | 描述 |
|---|---|---|
| NE5532DRE4 | Texas Instruments(德州仪器) | Dual Low-Noise High-Speed Audio Operational Amplifier 8-SOIC 0 to 70 |
| NE5532DR | Texas Instruments(德州仪器) | 增益带宽积（GBP）：10MHz 放大器组数：2 运放类型：General Purpose 各通道功耗：8mA 压摆率（SR）：9 V/us 电源电压：±5V ~ 15V 低噪声高性能双运算放大器 |
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