BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
SILICON THYRISTORS
The BTX18 series is a range of p-gate reverse blocking thyristors, in a
TO-39 metal enveloppe, intended for use in general low power
applications up to a A average on-state current.
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Anode to Cathode - Ratings
Voltage
1
)
BTX18- BTX18- BTX18- BTX18- BTX18-
100
200
300
400
500
Symbol
V
R
V
RWM
V
RRM
V
RSM
V
DWM
V
D
V
DRM
V
DSM
Currents
Ratings
Continuous Reverse Voltage
Crest Working Reverse Voltage
Repetitive Peak Reverse Voltage
(δ = 0.01 ; f=50Hz)
Non-repetitive peak reverse voltage
(t<10ms)
Crest Working off-state Voltage
Continuous off-state Voltage
Repetitive peak off-state voltage
(δ = 0.01 ; f=50Hz)
Non-repetitive peak off-state voltage
(t<10ms)
100
100
120
120
100
100
120
120
200
200
240
240
200
200
240
240
300
300
350
350
300
300
350
350
400
400
500
500
400
400
500
500
500
500
600
600
500
500
600
600
V
V
V
V
V
V
V²)
V²)
Symbol
I
T(AV)
I
T
I
T(RMS)
Ratings
Average on-state current T
CASE
=105°C
(averaged over any 20 T
AMB
=60°C, in
ms period)
free air
On-state Current (D.C.)
T
CASE
=100°C
RMS on-state Current
BTX18- BTX18- BTX18- BTX18- BTX18-
100
200
300
400
500
Max : 1.0
Max : 250
Max : 1.6
Max : 1.6
1/4
A
mA
A
A
COMSET SEMICONDUCTORS
BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
Symbol
I
TRM
I
TSM
Ratings
Repetitive Peak on-state Current
Non-repetitive peak on-state current
t=10ms ; T
J
=125°C prior to surge
Junction Temperature
Storage Temperature
BTX18- BTX18- BTX18- BTX18- BTX18-
100
200
300
400
500
Max : 10
10 A
Max : 125°C
-55 to +125°C
A
V
°C
T
J
T
stg
1) These ratings apply for zero or negative bias on the gate with respect to the cathode, and when a
resistor R<1 kΩ is connected between gate and cathode
2) The device is not suitable for operation in the forward breakover mode.
Gate to Cathode - Ratings
With 1Ω resistor between gate and cathode
Ω
Symbol
V
FGM
V
RGM
I
FGM
P
G(AV)
P
GM
Ratings
Forward Peak Voltage
Reverse Peak Voltage
Forward Peak Current
Average Power Dissipation (averaged over
any 20 ms period)
Peak Power Dissipation
BTX18 BTX18 BTX18 BTX18 BTX18
-100
-200
-300
-400
-500
Max : 10 V
Max : 5 V
Max : 0.2
Max : 0.05
Max : 0.5
V
V
A
W
W
Temperatures
Symbol
R
th j-c
R
th j-a
Z
th j-c
Ratings
From Junction to Case
From Junction to Ambient
Transient Thermal Resistance (t=10 ms)
BTX18 BTX18 BTX18 BTX18 BTX18
-100
-200
-300
-400
-500
10
200
2.5
°C/W
°C/W
°C/W
Anode to Cathode - Characteristics
Symbol
V
T
On State Voltage
I
T
=1.0 A, T
j
=25°C
Ratings
<
BTX18 BTX18 BTX18 BTX18 BTX18
-100
-200
-300
-400
-500
1.5
1.5
1.5
1.5
1.5
V)
1
COMSET SEMICONDUCTORS
2/4
BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
Symbol
I
RM
I
DM
I
L
I
H
Ratings
Peak Reverse Current
V
RM
=V
RWmax
; T
j
=125°C
Peak off-state Current
V
DM
=V
DWmax
; T
j
=125°C
Latching current, T
j
=125°C
Holding Current ; T
j
=25°C
<
<
<
BTX18 BTX18 BTX18 BTX18 BTX18
-100
-200
-300
-400
-500
800
800
400
400
275
275
Typ : 10
5.0 ²)
200
200
160
160
µA
µA
mA
mA
Gate to Cathode – Characteristics
Symbol
V
GT
V
GD
I
GT
Ratings
Voltage that will trigger all devices
T
j
=25°C
Voltage that will not trigger any device
T
j
=125°C
Current that vill trigger all devices
T
j
=25°C
>
<
>
BTX18 BTX18 BTX18 BTX18 BTX18
-100
-200
-300
-400
-500
2.0
200
5.0
V
mV
mA
Switching Characteristics
Symbol
Ratings
T
j
=25°C
t
q
T
j
=125°C
<
800
400
Typ : 35
275
200
160
µs
BTX18 BTX18 BTX18 BTX18 BTX18
-100
-200
-300
-400
-500
Turn off time when switched from
IT=300 mA to IR=175 mA
Type : 20
µs
I
DM
Peak off-state Current
V
DM
=V
DWmax
; T
j
=125°C
1)
V
T
is measured along the leads at 1 cm from the case
2) Measurer under the following conditiond :
Anode sypply voltage= +6.0V
Initial on-state current after gate triggering= 50mA
The current is reduced until the device turns of.
COMSET SEMICONDUCTORS
3/4
BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
MECHANICAL DATA CASE TO-39
DIMENSIONS
A
B
C
D
E
F
G
H
L
Pin 1 :
Pin 2 :
Pin 3 :
mm inches
6,71
0,26
13,2
0,51
9,23
0,36
8,34
0,32
0,8
0,03
0,8
0,03
0,42 0,016
45°
4,97
0,2
Kathode
Gate
Anode
COMSET SEMICONDUCTORS
4/4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
