SGF80N60UF
October 2001
IGBT
SGF80N60UF
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF
series provides low conduction and switching losses.
UF series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Features
• High Speed Switching
• Low Saturation Voltage : V
CE(sat)
= 2.1 V @ I
C
= 40A
• High Input Impedance
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
C
G
TO-3PF
TO-3PF
G C E
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
P
D
T
J
T
stg
T
L
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGF80N60UF
600
±
20
80
40
220
110
45
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
1.1
40
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGF80N60UF Rev. A
SGF80N60UF
Electrical Characteristics of IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 40mA, V
CE
= V
GE
I
C
= 40A
,
V
GE
= 15V
I
C
= 80A
,
V
GE
= 15V
3.5
--
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
2790
350
100
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
23
50
90
50
570
590
1160
30
55
150
160
630
940
1580
175
25
60
14
--
--
130
150
--
--
1500
--
--
200
250
--
--
2000
250
40
90
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 40A,
R
G
= 5Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 40A,
R
G
= 5Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CE
= 300 V, I
C
= 40A,
V
GE
= 15V
Measured 5mm from PKG
©2001 Fairchild Semiconductor Corporation
SGF80N60UF Rev. A
SGF80N60UF
250
Common Emitter
T
C
= 25℃
200
20V
15V
12V
120
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
100
Collector Current, I
C
[A]
Collector Current, I
C
[A]
8
80
150
V
GE
= 10V
60
100
40
50
20
0
0
2
4
6
0
0.5
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
50
Common Emitter
V
GE
= 15V
V
CC
= 300V
Load Current : peak of square wave
Collector - Emitter Voltage, V
CE
[V]
40
3
80A
Load Current [A]
30
2
40A
20
I
C
= 20A
1
10
Duty cycle : 50%
T
C
= 100
℃
Power Dissipation = 26W
0.1
1
10
100
1000
0
0
30
60
90
120
150
0
Case Temperature, T
C
[
℃
]
Frequency [Khz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
16
Collector - Emitter Voltage, V
CE
[V]
16
12
12
8
8
4
40A
I
C
= 20A
0
0
4
8
80A
80A
4
I
C
= 20A
0
0
4
8
12
16
20
40A
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2001 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGF80N60UF Rev. A
SGF80N60UF
4500
4000
3500
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Cies
500
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25℃
T
C
= 125℃
Ton
Capacitance [pF]
2500
2000
1500
Coes
1000
500
0
1
10
30
Cres
Switching Time [ns]
3000
Tr
100
20
1
10
70
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
2000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25℃
T
C
= 125℃
5000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25℃
T
C
= 125℃
1000
Toff
Switching Time [ns]
Switching Loss [uJ]
Eoff
Eon
1000
Tf
Eoff
100
Tf
20
1
10
80
100
1
10
80
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
500
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 5
Ω
T
C
= 25℃
T
C
= 125℃
100
2000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 5
Ω
T
C
= 25℃
T
C
= 125℃
Toff
Tf
Toff
100
Tf
Tr
1000
Switching Time [ns]
Ton
10
10
20
30
40
50
60
70
80
Switching Time [ns]
20
10
20
30
40
50
60
70
80
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGF80N60UF Rev. A
SGF80N60UF
3000
15
Common Emitter
R
L
= 7.5
Ω
T
C
= 25℃
Gate - Emitter Voltage, V
GE
[ V ]
1000
12
Switching Loss [uJ]
9
300 V
6
V
CC
= 100 V
3
200 V
100
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 5
Ω
T
C
= 25℃
T
C
= 125℃
10
20
30
40
50
60
70
80
Eon
10
0
0
0
30
60
90
120
150
180
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
I
C
MAX. (Pulsed)
100
500
Collector Current, I
C
[A]
100us
1㎳
10
DC Operation
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.3
1
10
100
1000
Collector Current, I
C
[A]
I
C
MAX. (Continuous)
50us
100
10
1
Safe Operating Area
V
GE
=20V, T
C
=100 C
1
1
10
100
1000
o
0.1
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
t1
0.01
t2
0.01
single pulse
1E-5
1E-4
1E-3
0.01
0.1
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2001 Fairchild Semiconductor Corporation
SGF80N60UF Rev. A
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