SGH20N120RUFD
IGBT
SGH20N120RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
•
•
•
•
•
Short circuit rated 10µs @ T
C
= 100°C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.3 V @ I
C
= 20A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 80ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
TO-3P
G C E
E
T
C
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGH20N120RUFD
1200
±
25
32
20
60
20
120
10
230
92
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
µs
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.54
0.84
40
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGH20N120RUFD Rev. B2
SGH20N120RUFD
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 1mA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
1200
--
--
--
--
0.6
--
--
--
--
1
± 100
V
V/°C
mA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 20mA, V
CE
= V
GE
I
C
= 20A
,
V
GE
= 15V
I
C
= 32A
,
V
GE
= 15V
3.5
--
--
5.5
2.3
2.8
7.5
3.0
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
2000
170
60
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
--
30
60
70
150
1.30
1.30
2.60
30
70
90
200
1.50
2.00
3.50
--
95
15
43
14
--
--
130
300
--
--
3.65
--
--
165
400
--
--
5.08
--
140
25
65
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
µs
nC
nC
nC
nH
V
CC
= 600 V, I
C
= 20A,
R
G
= 15Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 600 V, I
C
= 20A,
R
G
= 15Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
@
T
C
=
V
CC
= 600 V, V
GE
= 15V
100°C
V
CE
= 600 V, I
C
= 20A,
V
GE
= 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
Test Conditions
T
C
= 25°C
I
F
= 20A
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
F
= 20A
dI/dt = 200 A/µs
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
2.8
2.5
80
95
8.0
9.5
320
450
Max.
3.5
--
110
--
10.0
--
500
--
Units
V
ns
A
nC
©2002 Fairchild Semiconductor Corporation
SGH20N120RUFD Rev. B2
SGH20N120RUFD
140
T
C
= 25℃
120
20V
17V
15V
100
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
80
Collector Current, I
C
[A]
Collector Current, I
C
[A]
100
80
60
40
V
GE
= 10V
20
0
0
2
4
6
8
10
12V
60
40
20
0
0
2
4
6
8
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
25
50
75
100
125
150
Common Emitter
V
GE
= 15V
32A
40
V
CC
= 600V
Load Current : peak of square wave
30
Collector - Emitter Voltage, V
CE
[V]
Load Current [A]
20
I
C
= 20A
10
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 45W
0
0.1
1
10
100
1000
Case Temperature, T
C
[
℃
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
16
Collector - Emitter Voltage, V [V]
CE
16
12
Collector - Emitter Voltage, V
CE
[V]
12
8
8
40A
4
20A
I
C
= 10A
0
40A
4
20A
I
C
= 10A
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGH20N120RUFD Rev. B2
SGH20N120RUFD
3000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
2500
Capacitance [pF]
2000
Cies
Switching Time [ns]
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25℃
T
C
= 125℃
100
tr
1500
td(on)
1000
500
Coes
Cres
0
1
10
10
10
100
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Switching Time [ns]
Switching Loss [
µ
J]
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25℃
T
C
= 125℃
td(off)
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25℃
T
C
= 125℃
Eon
Eoff
tf
100
Eoff
1000
10
100
10
100
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
V
GE
=
±
15V, R
G
= 15Ω
T
C
= 25℃
T
C
= 125℃
tr
Common Emitter
V
GE
=
±
15V, R
G
= 15Ω
T
C
= 25℃
T
C
= 125℃
Switching Time [ns]
Switchig Time [ns]
100
tf
100
td(off)
td(on)
10
10
15
20
25
30
35
40
10
15
20
25
30
35
40
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH20N120RUFD Rev. B2
SGH20N120RUFD
16
Gate - Emitter Voltage, V
GE
[V]
Common Emitter
V
GE
=
±
15V, R
G
= 15Ω
T
C
= 25℃
T
C
= 125℃
Eoff
Eon
Eoff
14
12
10
8
6
4
2
0
Common Emitter
R
L
= 30Ω
T
C
= 25℃
600V
Switching Loss [
µ
J]
400V
1000
V
CC
= 200V
10
15
20
25
30
35
40
0
20
40
60
80
100
Collector Current, I
C
[A]
Gate Charge, Q
g
[nC]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
I
C
MAX. (Pulsed)
10
I
C
MAX. (Continuous)
1ms
DC Operation
1
100
µ
s
50
µ
s
100
Collector Current, I
C
[A]
Collector Current, I
C
[A]
10
0.1
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
1000
0.01
1
1
Safe Operating Area
V
GE
= 20V, T
C
= 100℃
10
100
1000
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
10
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
single pulse
1E-3
10
-5
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGH20N120RUFD Rev. B2
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