SGH25N120RUF
IGBT
SGH25N120RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
•
•
•
•
Short circuit rated 10µs @ T
C
= 100°C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.3 V @ I
C
= 25A
High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
E
TO-3P
G C E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
T
SC
P
D
T
J
T
stg
T
L
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGH25N120RUF
1200
±
25
40
25
75
10
270
108
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
µs
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
0.46
40
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGH25N120RUF Rev. A1
SGH25N120RUF
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 1mA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
1200
--
--
--
--
0.6
--
--
--
--
1
± 100
V
V/°C
mA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 25mA, V
CE
= V
GE
I
C
= 25A
,
V
GE
= 15V
I
C
= 40A
,
V
GE
= 15V
3.5
--
--
5.5
2.3
2.8
7.5
2.7
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
2400
220
70
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
--
30
60
70
150
1.60
1.63
3.23
30
70
90
200
1.88
2.50
4.35
--
110
18
55
14
--
--
130
200
--
--
4.55
--
--
165
270
--
--
6.31
--
165
27
83
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
µs
nC
nC
nC
nH
V
CC
= 600 V, I
C
= 25A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 600 V, I
C
= 25A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
@
T
C
V
CC
= 600 V, V
GE
= 15V
= 100°C
V
CE
= 600 V, I
C
= 25A,
V
GE
= 15V
Measured 5mm from PKG
©2001 Fairchild Semiconductor Corporation
SGH25N120RUF Rev. A1
SGH25N120RUF
175
T
C
= 25
℃
150
20V
17V
15V
125
Common Emitter
V
GE
= 15V
T
C
= 25
℃
T
C
= 125
℃
100
Collector Current, I
C
[A]
Collector Current, I
C
[A]
125
100
12V
75
50
25
0
0
2
4
6
8
10
V
GE
= 10V
75
50
25
0
0
2
4
6
8
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
3.4
3.2
3.0
2.8
2.6
2.4
2.2
I
C
= 25A
Common Emitter
V
GE
= 15V
40A
50
V
CC
= 600V
Load Current : peak of square wave
40
Collector - Emitter Voltage, V
CE
[V]
Load Current [A]
30
20
10
2.0
1.8
25
50
75
100
125
150
0
0.1
Duty cycle : 50%
T
C
= 100℃
power Dissipation = 55W
1
10
100
1000
Case Temperature, T
C
[
℃
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
16
20
Common Emitter
T
C
= 125℃
16
Collector - Emitter Voltage, V
CE
[V]
12
Collector - Emitter Voltage, V
CE
[V]
12
8
8
50A
4
25A
I
C
= 13A
0
0
4
8
12
16
20
50A
4
25A
I
C
= 13A
0
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2001 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGH25N120RUF Rev. A1
SGH25N120RUF
4000
3500
3000
Cies
Common Emitter
V
GE
=0V, f = 1MHz
T
C
= 25℃
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 25A
T
C
= 25℃
T
C
= 125℃
100
td(on)
Switching Time [ns]
Capacitance [pF]
tr
2500
2000
1500
1000
500
0
1
10
Coes
Cres
10
10
100
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Switching Time [ns]
Switching Loss [
µ
J]
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 25A
T
C
= 25℃
T
C
= 125℃
td(off)
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 25A
T
C
= 25℃
T
C
= 125℃
Eon
Eoff
tf
tf
100
Eoff
1000
10
100
10
100
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
100
Common Emitter
V
GE
=
±
15V, R
G
= 10Ω
T
C
= 25℃
T
C
= 125℃
Common Emitter
V
GE
=
±
15V, R
G
= 10Ω
T
C
= 25℃
T
C
= 125℃
Switching Time [ns]
Switching Time [ns]
tf
tr
td(on)
100
td(off)
10
10
20
30
40
50
10
20
30
40
50
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH25N120RUF Rev. A1
SGH25N120RUF
16
Gate - Emitter Voltage, V
GE
[V]
Common Emitter
V
GE
=
±
15V, R
G
= 10Ω
T
C
= 25℃
T
C
= 125℃
14
Switching Loss [
µ
J]
Eoff
Eon
Eoff
Eon
Common Emitter
R
L
= 24Ω
T
C
= 25℃
600V
12
10
400V
8
6
4
2
0
V
CC
= 200V
1000
15
25
35
45
55
0
20
40
60
80
100
120
Collector Current, I
C
[A]
Gate Charge, Q
g
[nC]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
I
C
MAX. (Pulsed)
100
µ
s
I
C
MAX. (Continuous)
10
1ms
50
µ
s
100
Collector Current, I
C
[A]
DC Operation
1
Collector Current, I
C
[A]
10
0.1
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
1000
0.01
1
1
Safe Operating Area
V
G E
= 20V, T
C
= 100℃
10
100
1000
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
10
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.05
Pdm
0.01
0.02
t1
0.01
single pulse
1E-3
10
-5
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2001 Fairchild Semiconductor Corporation
SGH25N120RUF Rev. A1
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