SGH40N60UF
IGBT
SGH40N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 20A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
E
TO-3P
G C E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
P
D
T
J
T
stg
T
L
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGH40N60UF
600
±
20
40
20
160
160
64
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
0.77
40
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGH40N60UF Rev. A1
SGH40N60UF
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 20mA, V
CE
= V
GE
I
C
= 20A
,
V
GE
= 15V
I
C
= 40A
,
V
GE
= 15V
3.5
--
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
1430
170
50
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
30
65
50
160
200
360
30
37
110
144
310
430
740
97
20
25
14
--
--
130
150
--
--
600
--
--
200
250
--
--
1200
150
30
40
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 20A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 20A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CE
= 300 V, I
C
= 20A,
V
GE
= 15V
Measured 5mm from PKG
©2002 Fairchild Semiconductor Corporation
SGH40N60UF Rev. A1
SGH40N60UF
160
Common Emitter
T
C
= 25℃
120
12V
20V
15V
80
70
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
Collector Current, I
C
[A]
8
Collector Current, I
C
[A]
60
50
40
30
20
10
80
V
GE
= 10V
40
0
0
2
4
6
0
0.5
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
30
Common Emitter
V
GE
= 15V
25
V
CC
= 300V
Load Current : peak of square wave
Collector - Emitter Voltage, V
CE
[V]
3
40A
Load Current [A]
20
2
20A
15
I
C
= 10A
1
10
5
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 32W
0.1
1
10
100
1000
0
0
30
60
90
120
150
0
Case Temperature, T
C
[
℃
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
16
Collector - Emitter Voltage, V
CE
[V]
16
12
12
8
8
40A
4
I
C
= 10A
0
0
4
8
12
16
20
20A
40A
4
I
C
= 10A
0
0
4
8
12
16
20
20A
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGH40N60UF Rev. A1
SGH40N60UF
2500
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
300
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25℃
T
C
= 125℃
2000
Ton
Tr
Capacitance [pF]
1500
1000
Coes
500
Cres
0
1
10
30
Switching Time [ns]
Cies
100
10
1
10
100
200
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Switching Time [ns]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25℃
T
C
= 125℃
2000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25℃
T
C
= 125℃
Toff
1000
Tf
Switching Loss [uJ]
Eon
Eoff
Eon
Eoff
100
Tf
100
20
1
10
100
200
50
1
10
100
200
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
1000
100
Switching Time [ns]
Switching Time [nS]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 10
Ω
T
C
= 25℃
T
C
= 125℃
Toff
Tf
Toff
Ton
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 10
Ω
T
C
= 25℃
T
C
= 125℃
15
20
25
30
35
40
100
Tr
Tf
10
10
20
10
15
20
25
30
35
40
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH40N60UF Rev. A1
SGH40N60UF
3000
15
Common Emitter
R
L
= 15
Ω
T
C
= 25℃
Gate - Emitter Voltage, V
GE
[ V ]
1000
12
Switching Loss [uJ]
9
300 V
6
V
CC
= 100 V
3
200 V
Eoff
Eon
100
Eoff
Eon
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 10
Ω
T
C
= 25℃
T
C
= 125℃
15
20
25
30
35
40
10
10
0
0
30
60
90
120
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
I
C
MAX. (Pulsed)
100
500
100
100us
1㎳
Collector Current, I
C
[A]
I
C
MAX. (Continuous)
10
DC Operation
1
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.3
1
10
Collector Current, I
C
[A]
50us
10
1
Safe Operating Area
V
GE
=20V, T
C
=100 C
100
1000
0.1
1
10
100
1000
o
0.1
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1
0.5
Thermal Response, Zthjc [
℃
/W]
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
1E-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGH40N60UF Rev. A1
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