SGH5N120RUF
SGH5N120RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
IGBT
Features
•
•
•
•
Short circuit rated 10µs @ T
C
= 100°C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.3 V @ I
C
= 5A
High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
E
TO-3P
G C E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
T
SC
P
D
T
J
T
stg
T
L
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGH5N120RUF
1200
±
25
8
5
15
10
74
30
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
µs
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
1.68
40
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGH5N120RUF Rev. B2
SGH5N120RUF
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 1mA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
1200
--
--
--
--
0.6
--
--
--
--
1
± 100
V
V/°C
mA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 5mA, V
CE
= V
GE
I
C
= 5A
,
V
GE
= 15V
I
C
= 8A
,
V
GE
= 15V
3.5
--
--
5.5
2.3
2.8
7.5
3.0
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
520
45
16
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
--
20
60
50
150
0.35
0.33
0.68
20
70
70
200
0.38
0.50
0.88
--
28
3
13
14
--
--
90
300
--
--
0.95
--
--
130
400
--
--
1.28
--
42
5
18
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
µs
nC
nC
nC
nH
V
CC
= 600 V, I
C
= 5A,
R
G
= 30Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 600 V, I
C
= 5A,
R
G
= 30Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
@
T
C
V
CC
= 600 V, V
GE
= 15V
= 100°C
V
CE
= 600 V, I
C
= 5A,
V
GE
= 15V
Measured 5mm from PKG
©2002 Fairchild Semiconductor Corporation
SGH5N120RUF Rev. B2
SGH5N120RUF
40
Common Emitter
T
C
= 25℃
30
20V
17V
15V
25
Common Emitter
V
GE
= 15V
T
C
= 25
℃
T
C
= 125
℃
20
Collector Current, I
C
[A]
Collector Current, I
C
[A]
15
20
12V
10
10
V
GE
= 10V
5
0
0
2
4
6
8
10
0
0
2
4
6
8
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
3.2
3.0
2.8
2.6
2.4
12
Common Emitter
V
G E
= 15V
8A
8
V
CC
= 600V
Load Current : peak of square wave
Collector - Emitter Voltage, V [V]
CE
I
C
= 5A
2.2
2.0
1.8
25
Load Current [A]
4
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 15W
0.1
1
10
100
1000
0
50
75
100
125
150
Case Temperature, T
C
[
℃
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25
℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
16
16
12
12
8
8
10A
4
I
C
= 3A
0
0
4
8
12
16
20
5A
4
I
C
= 3A
0
0
4
8
10A
5A
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGH5N120RUF Rev. B2
SGH5N120RUF
1000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
800
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
=5A
T
C
= 25℃
T
C
= 125℃
tr
td(on)
600
Cies
400
Switching Time [ns]
10
Capacitance [pF]
200
Coes
Cres
0
1
10
10
100
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
T
C
= 25℃
T
C
= 125℃
1000
Switching Time [ns]
Switching Loss [
µ
J]
tf
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 5A
T
C
= 25℃
T
C
= 125℃
Eoff
100
td(off)
Eon
Eoff
10
10
100
100
10
100
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V
GE
=
±
15V, R
G
= 30
Ω
T
C
= 25℃
T
C
= 125℃
100
Common Emitter
V
GE
=
±
15V, R
G
= 30
Ω
T
C
= 25℃
T
C
= 125℃
Switching Time [ns]
tr
Switching Time [ns]
tf
100
td(off)
td(on)
10
2
4
6
8
10
2
4
6
8
10
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH5N120RUF Rev. B2
SGH5N120RUF
1000
Gate - Emitter Voltage V
GE
[V]
Common Emitter
V
GE
=
±
15V, R
G
= 30
Ω
T
C
= 25℃
T
C
= 125℃
16
14
12
600V
10
400V
8
6
4
2
0
V
CC
= 200V
Common Emitter
R
L
= 120
Ω
T
C
= 25℃
Switching Loss [
µ
J]
Eoff
Eon
Eoff
Eon
100
2
4
6
8
10
0
10
20
30
Collector Current, I
C
[A]
Gate Charge, Q
g
[nC]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
I
C
MAX. (Pulsed)
50
µ
s
100
µ
s
1ms
I
C
MAX. (Continuous)
1
DC Operation
0.1
0.01
0.1
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
1
10
100
1000
Collector Current, I
C
[A]
Collector Current, I
C
[A]
10
10
1
1
Safe Operating Area
V
GE
= 20V, T
C
= 100℃
10
100
1000
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
10
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Pdm
t1
0.01
single pulse
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
1E-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGH5N120RUF Rev. B2
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