SGL5N150UF
IGBT
SGL5N150UF
General Description
Fairchild’s Insulated Gate Bipolar Transistor
(IGBT)
provides low conduction and switching losses.
SGL5N150UF is designed for the Switching Power
Supply applications.
Features
• High Speed Switching
• Low Saturation Voltage : V
CE(sat)
= 4.7 V @ I
C
= 5A
• High Input Impedance
Application
Switching Power Supply - High Input Voltage Off-line Converter
C
G
TO-264
G
C
E
T
C
= 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGL5N150UF
1500
±
20
10
5
20
125
50
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
1
25
Units
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
SGL5N150UF Rev. B
SGL5N150UF
Electrical Characteristics of IGBT
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
1500
--
--
--
--
--
--
1.0
± 100
V
mA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 5mA, V
CE
= V
GE
I
C
= 5A
,
V
GE
= 10V
2.0
--
3.0
4.7
4.0
5.5
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 10V
,
V
GE
= 0V,
f = 1MHz
--
--
--
780
130
70
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 600 V
I
C
= 5A
R
G
=10Ω
V
GE
= 10V
Inductive Load
T
C
= 25°C
V
CE
= 600 V, I
C
= 5A
V
GE
= 10V
--
--
--
--
--
--
--
--
--
--
10
15
30
70
190
100
290
30
3
15
--
--
50
120
--
--
580
45
5
25
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
©2003 Fairchild Semiconductor Corporation
SGL5N150UF Rev. B
SGL5N150UF
80
20 V
70
15 V
60
50
40
Tc = 25℃
Tc = 100℃
50
Vge=10V
10 V
Ic [A]
40
30
20
Ic [A]
Vge=5 V
30
20
10
10
0
0
5
10
15
0
20
0
4
8
12
16
20
Vce [V]
Vce [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
Vge = 10V
8.0
Vge=10V
7.5
10
7.0
8
6.5
6
Vce(sat) [V]
Ic =10A
Ic [A]
6.0
5.5
5.0
4
2
4.5
0
25
50
75
100
125
150
4.0
20
40
60
80
100
Ic = 5A
120
140
Tc [
℃
]
Tc [
℃
]
Fig 3. Maximum Collector Current vs.
Case Temperature
Fig 4. Saturation Voltage vs.
Case Temperature
12
Vcc = 600V
Load Current : peak of square wave
10
1
0.5
8
Thermal Response [Zthjc]
0.2
Load Current [A]
6
0.1
0.1
0.05
0.02
0.01
t2
Pdm
t1
4
2
Duty cycle : 50%
Tc = 100 C
Power Dissipation = 30W
o
single pu lse
0.01
1E -5
0
0.1
1
10
100
1000
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
1E -4
1E -3
0.01
0.1
1
10
Frequency [kHz]
Rectangular Pulse Duration [sec]
Fig 5. Load Current vs. Frequency
Fig 6. Transient Thermal Impedance
of IGBT Junction to Case
SGL5N150UF Rev. B
©2003 Fairchild Semiconductor Corporation
SGL5N150UF
1200
10
1000
Common Emitter
R
L
= 120
Ω
, V
CC
= 600V
T
C
= 25 C
o
[V]
800
Cies
8
Capacitance [pF]
Gate - Emitter Voltage, V
GE
6
600
400
4
200
Coes
0
1
Cres
2
0
10
0
10
20
30
Vce [V]
Gate Charge, Qg [nC]
Fig 7. Typical Capacitance vs.
Collector to Emitter Voltage
Fig 8. Typical Gate Charge Characteristic
600
Vcc = 600V
Ic = 5A
500
Esw
1200
Vcc = 600V
Rg = 10
Ω
Vge = 10V
1000
Ic = 10A
Energy [uJ]
Eon
300
Energy [uJ]
400
800
600
Ic = 5A
200
Eoff
400
Ic = 3A
100
0
5
10
15
20
25
30
200
20
40
60
80
100
Rg [
Ω
]
Tc [
℃
]
Fig 9. Typical Switching Loss vs.
Gate Resistance
1.2
Vcc = 600V
Rg = 10
Ω
Tc = 100℃
1.0
Esw
Fig 10. Typical Switching Loss vs.
Case Temperature
10
0.8
Energy [mJ]
0.6
Eon
Eoff
0.4
Safe Operating Area
Vge = 20V, Tc = 100℃
1
4
6
8
10
1
10
100
1000
0.2
Ic [A]
Ic [A]
Vce [V]
Fig 11. Typical Switching Loss vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
Fig 12. Turn-Off SOA
SGL5N150UF Rev. B
SGL5N150UF
Package Dimension
TO-264 (FS PKG CODE AR)
6.00
±0.20
20.00
±0.20
(4.00)
(8.30)
(8.30)
(2.00)
(1.00)
(9.00)
(9.00)
(11.00)
(0.50)
20.00
±0.20
2.50
±0.10
1.50
±0.20
(7.00)
(7.00)
4.90
±0.20
(1.50)
2.50
±0.20
(1.50)
3.00
±0.20
1.00
–0.10
+0.25
(2.00)
(R1
.00
)
20.00
±0.50
(R
0)
2.0
ø3.3
0
±
0
.20
(1.50)
5.45TYP
[5.45
±0.30
]
5.45TYP
[5.45
±0.30
]
0.60
–0.10
+0.25
2.80
±0.30
5.00
±0.20
3.50
±0.20
(0.15)
(1.50)
(2.80)
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
SGL5N150UF Rev. B
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