SGM2013N
GaAs N-channel Dual-Gate MES FET
Description
The SGM2013N is an N-channel dual-gate GaAs
MES FET for UHF-band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular/cordless phone.
Features
•
Ultra-small package
•
Low voltage operation
•
Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
•
High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz
•
High stability
•
Built-in gate protection diode
Application
UHF-band high-frequency amplifier and mixer
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings
(Ta = 25°C)
•
Drain to source voltage
V
DSX
6
•
Gate 1 to source voltage
V
G1S
–4
•
Gate 2 to source voltage
V
G2S
–4
•
Drain current
I
D
18
•
Allowable power dissipation
P
D
100
•
Channel temperature
Tch
125
•
Storage temperature
Tstg
–55 to +150
M-281
V
V
V
mA
mW
°C
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E97144-PS
SGM2013N
Electrical Characteristics
Item
Gate 1 to source current
Symbol
I
G1SS
Conditions
V
G1S
= –3V
V
G2S
= 0V
V
DS
= 0V
V
G2S
= –3V
V
G1S
= 0V
V
DS
= 0V
V
DS
= 2V
V
G1S
= 0V
V
G2S
= 0V
V
DS
= 2V
I
D
= 100µA
V
G2S
= 0V
V
DS
= 2V
I
D
= 100µA
V
G1S
= 0V
V
DS
= 2V
I
D
= 2mA
V
G2S
= 0.5V
f = 1kHz
V
DS
= 2V
I
D
= 2mA
V
G2S
= 0.5V
f = 1MHz
V
DS
= 2V
I
D
= 2mA
V
G2S
= 0.5V
f = 900MHz
4
Min.
Typ.
(Ta = 25°C)
Max.
–4
Unit
µA
Gate 2 to source current
I
G2SS
–4
µA
Drain saturation current
Gate 1 to source cut-off
voltage
Gate 2 to source cut-off
voltage
I
DSS
V
G1S
(OFF)
V
G2S
(OFF)
16
mA
–1.5
V
–1.5
V
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
gm
Ciss
Crss
NF
Ga
8
11
0.55
15
1.4
1
30
2.5
ms
pF
fF
dB
dB
15
18
Typical Characteristics
(Ta = 25°C)
I
D
vs. V
DS
20
(V
G2S
= 0.5V)
16
16
20
(V
DS
= 2V)
I
D
vs. V
G1S
I
D
– Drain current [mA]
12
–0.2V
8
–0.4V
4
–0.6V
0
0
1
2
3
4
5
V
DS
– Drain to source voltage [V]
6
–0.8V
–1.0V
I
D
– Drain current [mA]
V
G1S
= 0V
V
G2S
= 0.5V
12
0.25V
8
0V
–0.25V
4
–0.5V
–0.75V
–1.0V
–1.5
–1.0
–0.5
V
G1S
– Gate 1 to source voltage [V]
0
0
–2.0
–2–
SGM2013N
I
D
vs. V
G2S
10
(V
DS
= 2V)
8
25
V
G1S
= 0V
–0.2V
6
–0.4V
4
–0.6V
2
–0.8V
–1.0V
–1.5
–1.0
–0.5
V
G2S
– Gate 2 to source voltage [V]
0
(V
DS
= 2V)
gm vs. V
G1S
gm – Forward transfer admittance [ms]
20
V
G2S
= 0.5V
15
I
D
– Drain current [mA]
10
0.25V
5
0V
–0.25V
–0.5V
–0.75V
–1.5
–1.0
–0.5
V
G1S
– Gate 1 source voltage [V]
0
0
–2.0
0
–2.0
NF, Ga vs. V
G1S
5
(V
DS
= 2V, V
G2S
= 0.5V, f = 900MHz)
4
20
4
25
5
NF, Ga vs. V
DS
25
20
Ga
NF – Noise figure [dB]
3
15
NF – Noise figure [dB]
Ga
Ga – Associated gain [dB]
3
15
2
NF
1
10
2
NF
1
10
5
5
0
–1.0
0
–0.6
–0.2
–0.8
–0.4
0
V
G1S
– Gate 1 to source voltage [V]
0.2
0
0
2
4
1
3
V
DS
– Drain to source voltage [V]
5
0
NF, Ga vs. I
D
5
(V
DS
= 2V, V
G2S
= 0.5V, f = 900MHz)
25
3.0
NF, Ga vs. f
30
(V
DS
= 2V, V
G2S
= 0.5V, I
D
= 2mA)
NF min – Minimum noise figure [dB]
4
Ga – Associated gain [dB]
NF – Noise figure [dB]
Ga
2.0
20
3
15
1.5
15
2
NF
1
10
1.0
NFmin
0.5
10
5
5
0
0
1
2
3 4 5 6 7 8
I
D
– Drain current [mA]
9
10 11
0
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
f – Frequency [GHz]
0
–3–
Ga – Associated gain [dB]
Ga
20
2.5
25
Ga – Associated gain [dB]
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
