PROFET® Data Sheet BTS660P
Smart Highside High Current Power Switch
Reversave
•
Reverse battery protection by self turn on of
power MOSFET
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Over temperature protection
•
Over voltage protection (including load dump)
•
Clamp of negative voltage at output
•
Fast deenergizing of inductive loads
1
)
•
Low ohmic inverse current operation
•
Diagnostic feedback with load current sense
•
Open load detection via current sense
•
Loss of
V
bb
protection
2
)
•
Electrostatic discharge
(ESD) protection
Features
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
V
bb(AZ)
70
V
V
ON(CL)
62 V
V
bb(on)
5.0 ... 58 V
R
ON
9
mΩ
I
L(ISO)
44
A
I
L(SC)
90
A
I
L :
I
IS
13 000
TO 220-7SMD
Application
7
1
•
Power switch with current sense diagnostic
feedback for up to 48 V DC grounded loads
•
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
•
Replaces electromechanical relays, fuses and discrete circuits
7
Standard
SMD
1
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
4 & Tab
R
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
bb
+ V bb
Voltage
sensor
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
OUT
1,2,6,7
I
L
Current
Sense
Load
3
IN
ESD
Logic
I
IN
Temperature
sensor
I
IS
IS
PROFET
Load GND
V
IN
V
IS
Logic GND
5
R
IS
1
2
)
)
With additional external diode.
Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1
2003-Oct-01
Data Sheet BTS660P
Pin
1
2
3
4
Symbol
OUT
OUT
IN
Vbb
O
O
I
Function
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
3
especially in high current applications!
)
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
Input, activates the power switch in case of short to ground
Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the V
bb
connection
4
instead of this pin
)
.
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
+
5
6
7
IS
OUT
OUT
S
O
O
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage
(over voltage protection see page 4)
Supply voltage for full short circuit protection,
(E
AS
limitation see diagram on page 10)
T
j,start
=-40 ...+150°C:
Load current (short circuit current, see page 5)
Load dump protection
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
5)
= 2
Ω,
R
L
= 0.23
Ω,
t
d
= 200 ms,
IN, IS = open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.,
I
L
= 20 A, Z
L
= 6 mH, 0
Ω,
see diagrams on page 10
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
Symbol
V
bb
V
bb
I
L
V
Load dump
)
T
j
T
stg
P
tot
E
AS
V
ESD
I
IN
I
IS
6
Values
62
58
self-limited
80
-40 ...+150
-55 ...+150
170
1.2
4.0
+15 , -250
+15 , -250
Unit
V
V
A
V
°C
W
J
kV
mA
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 7 and 8
3
)
)
)
)
4
5
6
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current
capability and decrease the current sense accuracy
Otherwise add up to 0.7 mΩ (depending on used length of the pin) to the R
ON
if the pin is used instead of
the tab.
R
I
= internal resistance of the load dump test pulse generator.
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Infineon Technologies AG
Page 2
2003-Oct-01
Data Sheet BTS660P
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
min
--
--
--
7
chip - case
:
R
thJC
)
junction - ambient (free air):
R
thJA
SMD version, device on PCB
8
)
:
Values
typ
max
-- 0.75
60
--
33
--
Unit
K/W
Electrical Characteristics
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 24 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance
(Tab to pins 1,2,6,7, see
measurement circuit page 7)
I
L
= 20 A,
T
j
= 25 °C:
V
IN
= 0,
I
L
= 20 A
,
T
j
= 150 °C:
I
L
= 80 A
,
T
j
= 150 °C:
V
bb
=6V,
I
L
=20A,
T
j
=150°C:
Nominal load current
9
) (Tab to pins 1,2,6,7)
ISO 10483-1/6.7:
V
ON
= 0.5 V,
T
c = 85 °C
10)
Nominal load current
9)
, device on PCB
8)
T
A
= 85 °C,
T
j
≤
150 °C
V
ON
≤
0.5 V,
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
V
ON
= 1.8 V,
T
c = 25 °C:
see diagram on page 13
V
ON
= 1.8 V,
T
c = 150 °C:
Turn-on time
11
)
IIN
to 90%
V
OUT
:
to 10%
V
OUT
:
Turn-off time
IIN
R
L
= 1
Ω
,
T
j
=-40...+150°C
Slew rate on
11)
(10 to 30%
V
OUT
)
R
L
= 1
Ω
Slew rate off
11)
(70 to 40%
V
OUT
)
R
L
= 1
Ω
R
ON
--
R
ON(Static)
I
L(ISO)
38
7.2
14.6
--
17
44
9
17
17
22
--
mΩ
A
I
L(NOM)
I
L(Max)
9.9
185
105
50
30
11.1
--
--
--
--
--
A
A
t
on
t
off
dV/dt
on
-dV/dt
off
--
--
1.5
1.9
400
110
2.2
2.6
µs
1.0
1.1
V/µs
V/µs
7
8
Thermal resistance R
thCH
case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
9
)
not subject to production test, specified by design
10
)
T
J
is about 105°C under these conditions.
11
)
See timing diagram on page 14.
)
Infineon Technologies AG
Page 3
2003-Oct-01
Data Sheet BTS660P
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 24 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Inverse Load Current Operation
On-state resistance
(Pins 1,2,6,7 to pin 4)
V
bIN
= 12 V,
I
L
= - 20 A
T
j
= 25 °C:
R
ON(inv)
see diagram on page 10
T
j
= 150 °C:
Nominal inverse load current
(Pins 1,2,6,7 to Tab)
I
L(inv)
V
ON
= -0.5 V,
T
c = 85 °C
Drain-source diode voltage
(V
out
> V
bb
)
-V
ON
I
L
= - 20 A,
I
IN
= 0,
T
j
= +150°C
Operating Parameters
12
Operating voltage (V
IN
= 0)
)
Under voltage shutdown
13
)
14
)
Under voltage start of charge pump
see diagram page
15
Over voltage protection
15
)
T
j
=-40°C:
I
bb
= 15 mA
T
j
= 25...+150°C:
Standby current
T
j
=-40...+25°C:
I
IN
= 0, V
bb
=35V
T
j
= 150°C:
--
50
--
7.2
14.6
60
0.6
9
17
--
0.7
mΩ
A
mV
V
bb(on)
V
bIN(u)
V
bIN(ucp)
V
bIN(Z)
I
bb(off)
5.0
1.5
3.0
68
70
--
--
--
3.0
4.5
--
72
15
25
58
4.5
6.0
--
--
25
50
V
V
V
V
µA
) If the device is turned on before a V -decrease, the operating voltage range is extended down to
V
bIN(u)
.
bb
For the voltage range 0..58 V the device is fully protected against overtemperature and short circuit.
13
)
not subject to production test, specified by design
14
)
V
bIN
= V
bb
- V
IN
see diagram on page 15. When
V
bIN
increases from less than V
bIN(u)
up to
V
bIN(ucp)
= 5 V
(typ.) the charge pump is not active and
V
OUT
≈V
bb
- 3 V.
15
)
See also
V
ON(CL)
in circuit diagram on page 9.
12
Infineon Technologies AG
Page 4
2003-Oct-01
Data Sheet BTS660P
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 24 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
16)
Short circuit current limit
(Tab to pins 1,2,6,7)
V
ON
= 24 V, time until shutdown max. 300
µs
T
c
=-40°C:
see page 8 and 13
T
c
=25°C:
T
c
=+150°C:
Short circuit shutdown delay after input current
positive slope,
V
ON
>
V
ON(SC) 17)
min. value valid only if input "off-signal" time exceeds 30
µs
I
L(SC)
I
L(SC)
I
L(SC)
t
d(SC)
--
--
50
80
62
--
150
--
90
90
80
--
65
6
--
10
180
--
--
350
72
--
--
--
A
µs
V
V
°C
K
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. over voltage)
I
L
= 40 mA
17
Short circuit shutdown detection voltage
)
(pin 4 to pins 1,2,6,7)
V
ON(CL)
V
ON(SC)
T
jt
∆
T
jt
Thermal overload trip temperature
Thermal hysteresis
Reverse Battery
Reverse battery voltage
18
)
-V
bb
On-state resistance
(Pins 1,2,6,7 to pin 4)
T
j
= 25 °C:
R
ON(rev)
V
bb
= -12V,
V
IN
= 0,
I
L
= - 20 A,
R
IS
= 1 kΩ
T
j
= 150 °C:
Integrated resistor in V
bb
line
T
j
= 25 C:
R
bb
T
j
=150°C:
--
--
90
105
--
8.8
--
120
125
42
10.5
20
135
150
V
mΩ
Ω
16
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in
the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions
are not designed for continuous repetitive operation.
17
)
not subject to production test, specified by design
18
)
The reverse load current through the intrinsic drain-source diode has to be limited by the connected load
(as it is done with all polarity symmetric loads). Note that under off-conditions (I
IN
=
I
IS
= 0) the power
transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the
intrinsic drain-source diode. The temperature protection is not active during reverse current operation! To
reduce the power dissipation at the integrated R
bb
resistor an input resistor is recommended as described
on page 9.
Infineon Technologies AG
Page 5
2003-Oct-01
测试/测量
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