SGR2N60UFD
IGBT
SGR2N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
•
•
•
•
High speed switching
Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 1.2A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 45ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
C
G
G
E
D-PAK
E
T
C
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGR2N60UFD
600
±
20
2.4
1.2
10
1.5
12
25
10
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Typ.
--
--
--
Max.
5.0
5.0
50
Units
°C/W
°C/W
°C/W
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2002 Fairchild Semiconductor Corporation
SGR2N60UFD Rev. A1
SGR2N60UFD
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 1.2mA, V
CE
= V
GE
I
C
= 1.2A
,
V
GE
= 15V
I
C
= 2.4A
,
V
GE
= 15V
3.5
--
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
98
18
4
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
20
80
95
30
13
43
19
24
115
176
36
27
63
9
3
1.5
7.5
--
--
130
160
--
--
70
--
--
200
250
--
--
100
14
5
3
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 1.2A,
R
G
= 200Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 1.2A,
R
G
= 200Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CE
= 300 V, I
C
= 1.2A,
V
GE
= 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
I
F
= 2A
Test Conditions
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
45
75
1.5
2.5
60
120
Max.
1.7
--
80
--
3.0
--
135
--
Units
V
ns
A
nC
I
F
= 2A,
di/dt = 200A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
©2002 Fairchild Semiconductor Corporation
SGR2N60UFD Rev. A1
SGR2N60UFD
12
Common Emitter
T
C
= 25℃
10
20V
6
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
5
15V
Collector Current, I
C
[A]
8
12V
Collector Current, I
C
[A]
8
4
6
3
V
GE
= 10V
4
2
2
1
0
0
2
4
6
0
0.5
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
3.0
Common Emitter
V
GE
= 15V
2.5
2.4A
Collector - Emitter Voltage, V
CE
[V]
V
CC
= 300V
Load Current : peak of square wave
3
Load Current [A]
2.0
1.2A
2
I
C
= 0.6A
1
1.5
1.0
0.5
0
0
30
60
90
120
150
0.0
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 4W
0.1
1
10
100
1000
Case Temperature, T
C
[
℃
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
16
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
16
12
12
8
8
2.4A
4
I
C
= 0.6A
0
1.2A
4
I
C
= 0.6A
0
0
4
1.2A
2.4A
8
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGR2N60UFD Rev. A1
SGR2N60UFD
160
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
120
Cies
100
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 1.2A
T
C
= 25℃
T
C
= 125℃
Capacitance [pF]
80
Coes
40
Cres
0
1
10
30
Switching Time [ns]
Ton
Tr
10
10
100
500
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
600
Switching Time [ns]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 1.2A
T
C
= 25℃
T
C
= 125℃
100
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 1.2A
T
C
= 25℃
T
C
= 125℃
Toff
Switching Loss [uJ]
Eon
Eoff
Tf
Toff
100
Eoff
10
Tf
50
10
100
500
5
10
100
500
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
100
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 200
Ω
T
C
= 25℃
T
C
= 125℃
1000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 200
Ω
T
C
= 25℃
T
C
= 125℃
Toff
Toff
Tf
Tf
Switching Time [ns]
Ton
Switching Time [ns]
100
1.5
2.0
2.5
0.5
Tr
10
0.5
1.0
1.0
1.5
2.0
2.5
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGR2N60UFD Rev. A1
SGR2N60UFD
100
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 200
Ω
T
C
= 25℃
T
C
= 125℃
15
Common Emitter
R
L
= 250
Ω
Tc = 25℃
Gate - Emitter Voltage, V
GE
[ V ]
12
Switching Loss [uJ]
9
300 V
6
V
CE
= 100 V
3
200 V
Eon
Eon
Eoff
10
Eoff
0.5
1.0
1.5
2.0
2.5
0
0
2
4
6
8
10
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
30
I
C
MAX. (Pulsed)
10
50us
20
10
Collector Current, I
C
[A]
100us
I
C
MAX. (Continuous)
1
DC Operation
1㎳
Collector Current, I
C
[A]
1
0.1
0.01
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.3
1
10
100
1000
Safe Operating Area
V
GE
=20V, T
C
=100 C
0.1
1
10
100
1000
o
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
Thermal Response, Zthjc [
℃
/W]
0.5
0.2
0.1
0.05
0.02
0.1
0.01
Pdm
t1
1
single pulse
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGR2N60UFD Rev. A1
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
