SGS6N60UFD
April 2001
IGBT
SGS6N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature..
Features
•
•
•
•
High speed switching
Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 3A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 35ns (typ.)
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
G
G C E
TO-220F
T
C
= 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGS6N60UFD
600
±
20
6
3
25
4
25
22
9
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
5.5
8.0
62.5
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGS6N60UFD Rev. A
SGS6N60UFD
Electrical Characteristics of IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
µA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 3mA, V
CE
= V
GE
I
C
= 3A
,
V
GE
= 15V
I
C
= 6A
,
V
GE
= 15V
3.5
--
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
220
22
7
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
25
60
70
57
25
82
22
32
80
122
65
46
111
15
5
4
7.5
--
--
130
150
--
--
120
--
--
200
300
--
--
170
22
8
6
--
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 3A,
R
G
= 80Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 3A,
R
G
= 80Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CE
= 300 V, I
C
= 3A,
V
GE
= 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
I
F
= 4A
Test Conditions
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
35
53
3.5
4.5
60
120
Max.
1.7
--
52
--
5.0
--
135
--
Units
V
ns
A
nC
I
F
= 4A,
di/dt = 200A/µs
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
©2001 Fairchild Semiconductor Corporation
SGS6N60UFD Rev. A
SGS6N60UFD
30
Common Emitter
T
C
= 25℃
25
20V
15
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
Collector Current, I
C
[A]
15V
20
Collector Current, I
C
[A]
8
12
9
15
12V
6
10
V
GE
= 10V
5
3
0
0
2
4
6
0
0.5
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Chacracteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
5
Common Emitter
V
GE
= 15V
4
Collector - Emitter Voltage, V [V]
CE
V
CC
= 300V
Load Current : peak of square wave
3
6A
Load Current [A]
3
2
3A
2
I
C
= 1.5A
1
1
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 5W
0.1
1
10
100
1000
0
0
30
60
90
120
150
0
Case Temperature, T
C
[
℃
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V [V]
CE
16
16
12
12
8
8
6A
4
I
C
= 1.5A
0
3A
4
I
C
= 1.5A
0
0
4
8
6A
3A
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2001 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGS6N60UFD Rev. A
SGS6N60UFD
400
350
300
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
100
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 3A
T
C
= 25℃
T
C
= 125℃
Ton
Capacitance [pF]
Cies
250
200
150
100
50
0
1
10
30
Switching Time [ns]
Tr
Coes
Cres
10
1
10
100
400
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
600
Switching Time [ns]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 3A
T
C
= 25℃
T
C
= 125℃
Toff
Toff
300
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 3A
T
C
= 25℃
T
C
= 125℃
100
Switching Loss [uJ]
Eon
Eoff
Eoff
Tf
100
10
Tf
50
1
10
100
400
5
1
10
100
400
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 80
Ω
T
C
= 25℃
T
C
= 125℃
500
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 80
Ω
T
C
= 25℃
T
C
= 125℃
Switching Time [ns]
Switching Time [ns]
100
Toff
Ton
100
Tr
Tf
10
1
2
3
4
5
6
50
1
2
3
4
5
6
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGS6N60UFD Rev. A
SGS6N60UFD
200
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 80
Ω
T
C
= 25℃
T
C
= 125℃
15
Common Emitter
R
L
= 100
Ω
Tc = 25℃
Gate - Emitter Voltage, V [ V ]
GE
100
12
Switching Loss [uJ]
9
300 V
6
V
CC
= 100 V
3
200 V
Eon
Eon
Eoff
10
Eoff
5
1
2
3
4
5
6
0
0
3
6
9
12
15
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
Ic MAX. (Pulsed)
10
Ic MAX. (Continuous)
1㎳
1
DC Operation
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linerarly with increase
in temperature
0.3
1
10
100
1000
100us
50
Collector Current, I
C
[A]
Collector Current, I
C
[A]
50us
10
1
0.1
Safe Operating Area
V
GE
=20V, T
C
=100 C
0.1
1
10
100
1000
o
0.01
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
0.5
Thermal Response, Zthjc [
℃
/W]
0.2
1
0.1
0.05
0.02
0.1
0.01
Pdm
t1
single pulse
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2001 Fairchild Semiconductor Corporation
SGS6N60UFD Rev. A
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