Data Sheet BTS650P
Smart Highside High Current Power Switch
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Over temperature protection
•
Over voltage protection (including load dump)
•
Clamp of negative voltage at output
•
Fast deenergizing of inductive loads
1
)
•
Low ohmic inverse current operation
•
Reversave
(Reverse battery protection)
•
Diagnostic feedback with load current sense
•
Open load detection via current sense
•
Loss of
V
bb
protection
2
)
•
Electrostatic discharge
(ESD) protection
Reversave
V
bb(AZ)
62
V
ON(CL)
42
V
bb(on)
5.0 ... 34
R
ON
I
L(ISO)
I
L(SC)
I
L :
I
IS
V
V
V
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
6.0
mΩ
70
A
130
A
14 000
TO-220-7
•
Power switch with current sense diagnostic
feedback for 12 V and 24 V DC grounded loads
•
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
•
Replaces electromechanical relays, fuses and
discrete circuits
Application
7
1
7
Standard
SMD
1
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
4 & Tab
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
OUT
R bb
+ V bb
1,2,6,7
I
L
Voltage
sensor
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
Load
3
IN
ESD
Logic
I
IN
Temperature
sensor
I
IS
IS
PROFET
Load GND
V
IN
V
IS
Logic GND
5
R
IS
1
)
2
)
With additional external diode.
Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1of 16
2003-Oct-01
Data Sheet BTS650P
Pin
1
2
3
4
5
6
7
Symbol
OUT
OUT
IN
Vbb
IS
OUT
OUT
O
O
I
Function
Output;
output to the load; pin 1, 2, 6 and 7 must be externally shorted with
3
each other especially in high current applications.
)
Output;
output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications.
3)
Input;
has an internal pull up; activates the power switch in case of short to
ground
Supply voltage;
positive power supply voltage; tab and pin 4 are internally
4
shorted; in high current applications use the tab
)
.
Sense Output;
Diagnostic feedback; provides a sense current proportional
to the load current; zero current on failure (see Truth Table on page 7)
Output;
output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications.
3)
Output;
output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications.
3)
+
S
O
O
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage
(over voltage protection see page 4)
Supply voltage for short circuit protection,
T
j,start
=-40 ...+150°C:
(see diagram on page 10)
Load current (short circuit current, see page 5)
Load dump protection
V
LoadDump
=
V
A
+
V
s
,
V
A
= 13.5 V
R
I
5)
= 2
Ω,
R
L
= 0.54
Ω,
t
d
= 200 ms,
IN, IS = open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.,
I
L
= 20 A, Z
L
= 7.5 mH, 0
Ω,
see diagrams on page 10
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
Symbol
V
bb
V
bb
I
L
V
Load dump
6)
T
j
T
stg
P
tot
E
AS
V
ESD
I
IN
I
IS
Values
42
34
self-limited
75
-40 ...+150
-55 ...+150
170
1.5
4
+15 , -250
+15 , -250
Unit
V
V
A
V
°C
W
J
kV
mA
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 8 and 9
3
)
4
)
5
)
6
)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Otherwise add up to 0.7 mΩ (depending on used length of the pin) to the R
ON
if the pin is used instead of the
tab.
R
I
= internal resistance of the load dump test pulse generator.
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Infineon Technologies AG
Page 2
2003-Oct-01
Data Sheet BTS650P
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
min
--
--
--
7
chip - case
:
R
thJC
)
junction - ambient (free air):
R
thJA
SMD version, device on PCB
8
)
:
Values
typ
max
-- 0.75
60
--
33
40
Unit
K/W
Electrical Characteristics
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance
(Tab to pins 1,2,6,7, see
measurement circuit page 7)
I
L
= 20 A,
T
j
= 25 °C:
R
ON
V
IN
= 0,
I
L
= 20 A
,
T
j
= 150 °C:
I
L
= 90 A
,
T
j
= 150 °C:
V
bb
= 6V
)
,
I
L
= 20 A
,
T
j
= 150 °C:
R
ON(Static)
Nominal load current
10
) (Tab to pins 1, 2, 6, 7)
I
L(ISO)
ISO 10483-1/6.7:
V
ON
= 0.5 V,
T
c = 85 °C
11)
Nominal load current
10)
, device on PCB
8)
T
A
= 85 °C,
T
j
≤
150 °C
V
ON
≤
0.5 V,
I
L(NOM)
Maximum load current in resistive range
(Tab to pins 1, 2, 6, 7)
V
ON
= 1.8 V,
T
c = 25 °C:
I
L(Max)
see diagram on page 13
V
ON
= 1.8 V,
T
c = 150 °C:
Turn-on time
12
)
IIN
to 90%
V
OUT
:
t
on
to 10%
V
OUT
:
t
off
Turn-off time
IIN
R
L
= 1
Ω
,
T
j
=-40...+150°C
Slew rate on
12)
(10 to 30%
V
OUT
)
dV/dt
on
R
L
= 1
Ω
,
T
J
= 25 °C
Slew rate off
12)
(70 to 40%
V
OUT
)
-dV/dt
off
R
L
= 1
Ω
,
T
J
= 25 °C
9
--
--
55
4.4
7.9
--
10
70
6.0
10.5
10.7
17
--
mΩ
A
13.6
250
150
100
30
--
--
17
--
--
--
--
0.7
1.1
--
--
--
420
110
--
--
A
A
µs
V/µs
V/µs
7
)
8
Thermal resistance R
thCH
case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9
)
Decrease of V
bb
below 10 V causes slowly a dynamic increase of R
ON
to a higher value of R
ON(Static)
. As
long as V
bIN
> V
bIN(u) max
, R
ON
increase is less than 10 % per second for T
J
< 85 °C.
10
)
not subject to production test, specified by design
11
)
T
J
is about 105°C under these conditions.
12
)
See timing diagram on page 14.
)
Infineon Technologies AG
Page 3
2003-Oct-01
Data Sheet BTS650P
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Inverse Load Current Operation
On-state resistance
(Pins 1, 2, 6, 7 to pin 4)
V
bIN
= 12 V,
I
L
= - 20 A
T
j
= 25 °C:
R
ON(inv)
see diagram on page 10
T
j
= 150 °C:
Nominal inverse load current
(Pins 1, 2, 6, 7 to Tab)
I
L(inv)
V
ON
= -0.5 V,
T
c = 85 °C
11
-V
ON
Drain-source diode voltage
(V
out
> V
bb
)
I
L
= - 20 A,
I
IN
= 0,
T
j
= +150°C
Operating Parameters
Operating voltage (V
IN
= 0V)
13
)
14
Under voltage shutdown
)
Under voltage start of charge pump
see diagram page
15
Over voltage protection
15
)
T
j
=-40°C:
I
bb
= 15 mA
T
j
= 25...+150°C:
Standby current
T
j
=-40...+25°C:
I
IN
= 0
T
j
= 150°C:
V
bb(on)
V
bIN(u)
V
bIN(ucp)
V
Z,IN
I
bb(off)
--
55
--
4.4
7.9
70
0.6
6.0
10.5
--
--
mΩ
A
V
5.0
1.5
3.0
60
62
--
--
--
3.0
4.5
--
66
15
25
34
4.5
6.0
--
--
25
50
V
V
V
V
µA
) If the device is turned on before a V -decrease, the operating voltage range is extended down to
V
bIN(u)
.
bb
For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.
14
)
V
bIN
= V
bb
- V
IN
see diagram on page 7. When
V
bIN
increases from less than V
bIN(u)
up to
V
bIN(ucp)
= 5 V
(typ.) the charge pump is not active and
V
OUT
≈V
bb
- 3 V.
15
)
See also
V
ON(CL)
in circuit diagram on page 9.
13
Infineon Technologies AG
Page 4
2003-Oct-01
Data Sheet BTS650P
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
16
)
Short circuit current limit
(Tab to pins 1, 2, 6, 7)
V
ON
= 12 V, time until shutdown max. 350
µs
T
c
=-40°C:
T
c
=25°C:
T
c
=+150°C:
Short circuit shutdown delay after input current
positive slope,
V
ON
>
V
ON(SC)
min. value valid only if input "off-signal" time exceeds 30
µs
I
L(SC)
I
L(SC)
I
L(SC)
t
d(SC)
--
--
65
80
14
110
130
115
--
16.5
--
180
--
350
20
A
µs
V
Output clamp
17
)
(inductive load switch off)
I
L
= 40 mA: -V
OUT(CL)
see diagram Ind. and overvolt. output clamp page 8
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. over voltage)
I
L
= 40 mA
Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7)
V
ON(CL)
V
ON(SC)
T
jt
∆
T
jt
39
--
150
--
42
6
--
10
47
--
--
--
V
V
°C
K
Thermal overload trip temperature
Thermal hysteresis
Reverse Battery
Reverse battery voltage
18
)
-V
bb
On-state resistance
(Pins 1 ,2 ,6 ,7 to pin 4)
T
j
= 25 °C:
R
ON(rev)
V
bb
= -12V,
V
IN
= 0,
I
L
= - 20 A,
R
IS
= 1 kΩ
T
j
= 150 °C:
Integrated resistor in V
bb
line
R
bb
--
--
--
--
5.4
8.9
120
16
7.0
12.3
--
V
mΩ
Ω
16
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
17
)
This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, V
OUT
is clamped to V
bb
- V
ON(CL)
at inductive load switch off.
18
)
The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (I
IN
=
I
IS
= 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
Infineon Technologies AG
Page 5
2003-Oct-01
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