SGW13N60UF
IGBT
SGW13N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 6.5A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
C
G
G
E
D2-PAK
E
T
C
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGW13N60UF
600
±
20
13
6.5
52
60
25
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Typ.
--
--
Max.
2.0
40
Units
°C/W
°C/W
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2002 Fairchild Semiconductor Corporation
SGW13N60UF Rev. A1
SGW13N60UF
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 6.5mA, V
CE
= V
GE
I
C
= 6.5A
,
V
GE
= 15V
I
C
= 13A
,
V
GE
= 15V
3.5
--
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
375
63
13
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
20
27
70
97
85
95
180
30
32
85
168
180
165
345
25
7
8
7.5
--
--
130
150
--
--
270
--
--
200
250
--
--
500
35
12
14
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 6.5A,
R
G
= 50Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 6.5A,
R
G
= 50Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CE
= 300 V, I
C
= 6.5A,
V
GE
= 15V
Measured 5mm from PKG
©2002 Fairchild Semiconductor Corporation
SGW13N60UF Rev. A1
SGW13N60UF
60
Common Emitter
T
C
= 25℃
50
20V
30
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
25
Collector Current, I
C
[A]
40
15V
Collector Current, I
C
[A]
8
20
30
12V
20
V
GE
= 10V
10
15
10
5
0
0
2
4
6
0
0.5
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
12
Common Emitter
V
GE
= 15V
V
CC
= 300V
Load Current : peak of square wave
Collector - Emitter Voltage, V
CE
[V]
3
13A
9
6.5A
2
I
C
= 3A
1
Load Current [A]
6
3
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 14W
0.1
1
10
100
1000
0
0
30
60
90
120
150
0
Case Temperature, T
C
[
℃
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
16
Collector - Emitter Voltage, V [V]
CE
16
12
12
8
8
4
I
C
= 3A
0
0
4
8
13A
6.5A
13A
4
I
C
= 3A
0
6.5A
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGW13N60UF Rev. A1
SGW13N60UF
600
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Cies
300
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 6.5A
T
C
= 25℃
T
C
= 125℃
500
Capacitance [pF]
Ton
Switching Time [ns]
400
100
300
Coes
200
Tr
100
Cres
0
1
10
30
10
1
10
100
400
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
600
Switching Time [ns]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 6.5A
T
C
= 25℃
T
C
= 125℃
600
Eon
Toff
Switching Loss [uJ]
Toff
Eoff
Eon
100
Eoff
Tf
100
Tf
50
1
10
100
300
10
1
10
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 6.5A
T
C
= 25℃
T
C
= 125℃
100
400
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 50
Ω
T
C
= 25℃
T
C
= 125℃
1000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 50
Ω
T
C
= 25℃
T
C
= 125℃
100
Switching Time [ns]
Switching Time [ns]
Toff
Toff
Tf
100
Tf
Ton
Tr
10
0
2
4
6
8
10
12
14
50
0
2
4
6
8
10
12
14
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGW13N60UF Rev. A1
SGW13N60UF
500
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 50
Ω
T
C
= 25℃
T
C
= 125℃
100
15
Common Emitter
R
L
= 46
Ω
Tc = 25℃
Gate - Emitter Voltage, V
GE
[ V ]
12
Switching Loss [uJ]
9
300 V
6
V
CC
= 100 V
3
200 V
Eon
Eon
10
Eoff
Eoff
5
0
2
4
6
8
10
12
14
0
0
5
10
15
20
25
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
I
C
MAX. (Pulsed)
100
50us
Collector Current, I
C
[A]
10
I
C
MAX. (Continuous)
1㎳
100us
Collector Current, I
C
[A]
10
1
DC Operation
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.3
1
10
100
1000
1
0.1
0.05
Safe Operating Area
V
GE
=20V, T
C
=100 C
0.1
1
10
100
1000
o
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
Thermal Response, Zthjc [
℃
/W]
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
single pulse
0.01
10
-5
-4
-3
-2
-1
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
10
10
10
10
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGW13N60UF Rev. A1
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