Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT10000/3
20 AMP
NPN DARLINGTON
TRANSISTOR
350 VOLTS
Features:
BV
CEO
350 Volts
Low Saturation Voltage
200
o
C Operating Temperature
Hermetically Sealed, Isolated Package
TX, TXV, S-Level Screening Available. Consult Factory.
Application Notes:
SFT10000 Darlington Transistor is a direct replacement of
Motorola MJ1000. It is designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical.
It is particularly suited for line operated switchmode
applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drives
Motor Controls
Deflection Circuits
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFT10000 __ __
│
└
Scre
ening
2/
│
__
= Not Screened
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
│
└
Package
/3 = TO-3
Maximum Ratings
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Power Dissipation
Derate above 50ºC
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
NOTES:
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
Symbol
V
CEO
V
CEV
V
EB
Continuous
Peak
@ T
C
= 25ºC
@ T
C
= 100ºC
I
C
I
CM
I
B
P
D
T
J
& T
STG
R
0JC
Value
350
450
8
20
30
2.5
175
100
1
-65 to +200
1
Units
Volts
Volts
Volts
Amps
Amps
Watts
Watts
W/ºC
ºC
ºC/W
TO-3(/3)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0011B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT10000/3
Symbol
V
CEO(sus)
I
C
= 2A
I
C
= 10A
T
C
= 25ºC
T
C
= 100ºC
V
CEX(sus)
I
CBO
I
CEV
I
EBO
I
C
= 5A
I
C
= 10A
I
C
= 10A, I
B
= 400mA, T
C
= 25ºC
I
C
= 20A, I
B
= 1A, T
C
= 25ºC
I
C
= 10A, I
B
= 400mA, T
C
= 100ºC
T
C
= 25ºC
T
C
= 100ºC
H
FE
V
CE (SAT)
V
BE (SAT)
V
F
H
FE
C
ob
t
(on)
t
(off)
t
sv
t
c
t
d
t
r
t
s
t
f
Min
80
400
275
––
––
––
––
50
40
––
––
––
––
––
––
10
100
––
––
––
––
––
––
Max
––
––
––
0.25
5.0
5
150
600
400
1.9
3.0
2.0
2.5
2.5
5.0
––
325
0.2
0.6
3.5
2.4
5.5
3.7
pF
µs
µs
μs
µs
µs
µs
Volts
Volts
Volts
Units
Volts
Volts
mA
mA
mA
Electrical Characteristics
Collector – Emitter Sustaining Voltage
(I
C
= 250 mA, I
B
= 0, V
CLAMP
= Rated V
CEO
)
Collector – Emitter Sustaining Voltage
(V
CLAMP
= Rated V
CEX
, T
C
= 100ºC)
Collector Cutoff Current
(V
CE
= Rated Value, V
BE(off)
= 1.5V)
Collector Cutoff Current
(V
CEV
= Rated V
CEV
, R
BE
= 50Ω, T
C
= 100ºC )
Emitter Cutoff Current
(V
EB
= 8V, I
C
= 0)
DC Current Gain*
(V
CE
= 5V)
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
(I
C
= 10A, I
B
= 400mA)
Diode Forward Voltage
(I
F
= 10A)
Small Signal Current Gain
(I
C
= 1A, V
CE
= 10V, f = 1MHz)
Output Capacitance
(V
CB
= 30V, I
E
= 0A, f = 2.0MHz)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Crossover Time
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
CASE OUTLINE: TO-3
Pin Out:
Case – Collector
1 – Base
2 – Emitter
V
CC
= 250V, I
C
= 10A
,
I
B1
= I
B2
= 400 mA, V
BE (off)
= 5V,
tp = 50s, Duty Cycle
≤
2%
I
C
= 10A(pk), V
CLAMP
= Rated V
CEX
,
I
B1
= 400 mA, V
BE (off)
= 5V, T
C
= 100ºC
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0011B
DOC
实时操作系统RTOS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
