• For stabilization of the secondary stage of switching power supplies
• Electronic equipment
sAbsolute
Maximum Ratings
Parameter
DC Input Voltage
DC Output Current
Power Dissipation
Junction Temperature
Ambient Operating Temperature
Storage Temperature
Thermal Resistance (junction to case)
Thermal Resistance (junction to ambient air)
Symbol
SI-3052N
V
IN
I
O
P
D1
P
D2
T
j
T
op
T
stg
R
th(j-c)
R
th(j-a)
25
Ratings
SI-3092N
30
2.0
*1
20(With infinite heatsink)
1.5(Without heatsink, stand-alone operation)
–40 to +125
–30 to +100
–40 to +125
5.0
66.7(Without heatsink, stand-alone operation)
SI-3122N/3152N
35
V
A
W
W
°C
°C
°C
°C/W
°C/W
Unit
(T
a
=25°C)
24
qSI-3002N
Series
sElectrical
Characteristics
Ratings
Parameter
Input Voltage
Output Voltage
Symbol
min.
V
IN
V
O
Conditions
V
DIF
Dropout Voltage
Conditions
1.0
Conditions
Line Regulation
Load Regulation
Temperature Coefficient
of Output Voltage
Ripple Rejection
Quiescent Circuit
Current
Overcurrent Protection
Starting Current
*3.4
∆V
OLINE
Conditions
∆V
OLOAD
Conditions
∆V
O
/∆T
a
Conditions
R
REJ
Conditions
I
q
Conditions
I
S1
Conditions
2.1
V
IN
=8V
10
40
±0.5
V
IN
=8V, I
O
=5mA, T
j
=0 to 100°C
54
V
IN
=8V, f=100 to 120H
Z
3
V
IN
=8V, I
O
=0A
2.1
V
IN
=12V
10
30
100
18
70
±1.0
V
IN
=12V, I
O
=5mA, T
j
=0 to 100°C
54
V
IN
=12V, f=100 to 120H
Z
3
V
IN
=12V, I
O
=0A
2.1
V
IN
=15V
10
V
IN
=6 to 15V, I
O
=1.0A
V
IN
=8V, I
O
=0 to 2.0A
6
*2
4.90
5.00
SI-3052N
typ.
max.
15
*1
5.10
0.5
V
IN
=8V, I
O
=1.0A
min.
10
*2
8.82
9.00
SI-3092N
typ.
max.
25
*1
9.18
0.5
I
O
≤1.5A
1.0
I
O
≤2.0A
48
180
24
93
±1.5
V
IN
=15V, I
O
=5mA, T
j
=0 to 100°C
54
V
IN
=15V, f=100 to 120H
Z
3
V
IN
=15V, I
O
=0A
10
64
240
1.0
min.
13
*2
11.76
12.00
SI-3122N
typ.
max.
27
*1
12.24
0.5
(T
a
=25°C unless otherwise specified)
SI-3152N
min.
16
*2
14.70
15.00
typ.
max.
27
*1
15.30
0.5
Unit
V
V
V
IN
=12V, I
O
=1.0A
V
IN
=15V, I
O
=1.0A
V
IN
=18V, I
O
=1.0A
V
1.0
30
120
±1.5
V
IN
=18V, I
O
=5mA, T
j
=0 to 100°C
54
V
IN
=18V, f=100 to 120H
Z
3
V
IN
=18V, I
O
=0A
2.1
V
IN
=18V
A
10
mA
dB
90
300
mV
mV
mV/°C
V
IN
=10 to 20V, I
O
=1.0A
V
IN
=12V, I
O
=0 to 2.0A
V
IN
=13 to 25V, I
O
=1.0A
V
IN
=15V, I
O
=0 to 2.0A
V
IN
=16 to 25V, I
O
=1.0A
V
IN
=18V, I
O
=0 to 2.0A
*1: V
IN(max)
and I
O(max)
are restricted by the relation P
D(max)
=(V
IN
-V
O
)•I
O
=20(W).
*2: Refer to the dropout voltage.(Refer to Setting DC Input Voltage on page 7.)
*3: I
S
1 is specified at –5(%) drop point of output voltage V
O
on the condition that V
IN
=V
O
+3V, I
O
=1.0A.
*4: A foldback type overcurrent protection circuit is built into the IC regulator. Therefore, avoid using it for the following applications as it may cause
starting errors:
(1) Constant current load (2) Plus/minus power (3) Series power (4)V
O
adjustment by raising ground voltage
sOutline
Drawing
φ
3.2
±0.2
±0.2
(unit:mm)
10
±0.2
4.2
±0.2
2.8
±0.2
16.9
±0.3
7.9
±0.2
4
0.5
2
max.
a
b
a. Part Number
2.6
±0.15
b. Lot Number
q
GND
(13.5)
0.95
+0.2
0.85
–0.1
±0.15
w
V
O
e
V
IN
Plastic Mold Package Type
Flammability: UL94V-0
Weight: Approx. 2.3g
P3.4
±0.1
×2=6.8
0.45
–0.1
+0.2
q
w
e
25
qSI-3002N
Series
sBlock
Diagram
T
r1
3
2
MIC
Reg.
Drive
Protection
Amp.
1
sStandard
External Circuit
C
0
*1 C
1
C
2
2
SI-3002N
C
2
1
+
C
0
DC Output
V
O
V
REF
D
1
*
2
3
1
+
*
DC Input
V
IN
C
1
*2 D
1
:Output capacitor (47 to 100µF)
:Oscillation prevention capacitor (C
1
: Approx. 47µF,
C
2
: 0.33µF)
These capacitors are required if the input line is inductive
and in the case of long wiring. Tantalum capacitors are rec-
ommended for C
1
and C
0
, particularly at low temperatures.
:Protection diode
This diode is required for protection against reverse biasing
of the input and output. Sanken EU2Z is recommended.
sT
a
-P
D
Characteristics
25
With Silicon Grease: G746
(SHINETSU CHEMICAL
INDUSTRIES)
Heatsink: Aluminum
Power Dissipation P
D
(W)
20
Infinite heatsink
15
200×200×2mm (2.3°C/W)
100×100×2mm (5.2°C/W)
75×75×2mm (7.6°C/W)
10
5
Without heatsink
0
–30
0
25
50
75
100
Ambient Temperature T
a
(°C)
P
D
=I
O
•[V
IN
(mean)–V
O
]
26
qSI-3002N
Series
sTypical
Characteristics
(T
a
=25°C)
I
O
vs. V
DIF
Characteristics
1.0
Temperature Coefficient of Output Voltage(SI-3052N)
5.02
V
IN
=8V
l
O
=0A
Rise Characteristics(SI-3052N)
6
Dropout Voltage V
DIF
(V)
0.8
5
Output Voltage V
O
(V)
Output Voltage V
O
(V)
4
l
O
=0A
0.5A
1A
1.5A
2A
0.6
5.00
3
0.4
2
0.2
1
0
0
0.5
1
1.5
2
4.98
–40 –20
0
20
40
60
80 100 120 140
0
0
1
2
3
4
5
6
7
8
Output Current I
O
(A)
Ambient Temperature T
a
(°C)
Input Voltage V
IN
(V)
Rise Characteristics(SI-3122N)
14
12
Overcurrent Protection Characteristics(SI-3052N)
6
Overcurrent Protection Characteristics(SI-3122N)
14
12
Output Voltage V
O
(V)
Output Voltage V
O
(V)
10
8
6
4
2
0
0
l
O
=0A
0.5A
1A
1.5A
2A
4
Output Voltage V
O
(V)
12V
10V
10
8
6
4
2
0
0
15V
6V
2
1
5
10
15
20
0
0
1.0
2.0
3.0
4.0
1.0
2.0
3.0
18
4.0
3
Input Voltage V
IN
(V)
Output Current I
O
(A)
Output Current I
O
(A)
Thermal Protection Characteristics(SI-3052N)
6
V
IN
=8V
l
O
=10mA
5
Output Voltage V
O
(V)
4
3
2
1
0
0
20
60
100
140
180
Case Temperature T
C
(°C)
Note on Thermal Protection:
The thermal protection circuit is intended for pro-
tection against heat during instantaneous short-
circuiting. Its operation is not guaranteed for short-
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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