PROFET® BTS 610 L1
Smart Two Channel Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Reverse battery protection
1)
•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of
V
bb
protection
•
Electrostatic discharge
(ESD) protection
Product Summary
Overvoltage protection
Operating voltage
V
bb(AZ)
V
bb(on)
43
5.0 ... 24
both
V
V
channels:
On-state resistance
R
ON
Load current (ISO)
I
L(ISO)
Current limitation
I
L(SCr)
each
parallel
200
100 mΩ
2.3
4.4
A
5
5
A
TO-220AB/7
Application
• µC
compatible power switch with diagnostic
feedback for 12 V DC grounded loads
•
Most suitable for resistive and lamp loads
7
1
Standard
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
®
technology. Fully protected by embedded protection
functions.
Voltage
source
Overvoltage
protection
Current
limit 1
Gate 1
protection
+ V bb
4
V
Logic
Voltage
sensor
Level shifter
Rectifier 1
Charge
pump 1
Charge
pump 2
Open load
Short to Vbb
detection 1
Current
limit 2
Gate 2
protection
Temperature
sensor 1
OUT1
1
3
6
5
IN1
IN2
ESD
ST
Logic
Level shifter
Rectifier 2
OUT2
Temperature
sensor 2
Open load
Short to Vbb
detection 2
R
O1
GND
R
O2
7
Load
®
PROFET
2
GND
Signal GND
Load GND
1
)
With external current limit (e.g. resistor R
GND
=150
Ω)
in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
02.97
BTS 610 L1
Pin
1
2
3
4
5
6
7
Symbol
OUT1 (Load, L)
GND
IN1
Vbb
ST
IN2
OUT2 (Load, L)
Function
Output 1, protected high-side power output of channel 1
Logic ground
Input 1, activates channel 1 in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback: open drain, low on failure
Input 2, activates channel 2 in case of logical high signal
Output 2, protected high-side power output of channel 2
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
Load dump protection
2
)
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
3
)
= 2
Ω,
R
L
= 5.3
Ω,
t
d
= 200 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Symbol
V
bb
V
bb
Values
43
24
60
self-limited
-40 ...+150
-55 ...+150
36
1.0
2.0
-10 ... +16
±2.0
±5.0
Unit
V
V
V
A
°C
W
kV
V
mA
V
Load dump4
)
I
L
T
j
T
stg
P
tot
V
ESD
V
IN
I
IN
I
ST
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
min
--
--
--
chip - case, both channels:
R
thJC
each channel:
junction - ambient (free air):
R
thJA
Values
typ
max
--
3.5
--
7.0
--
75
Unit
K/W
2
)
3)
4)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150
Ω
resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Semiconductor Group
2
BTS 610 L1
Electrical Characteristics
Parameter and Conditions,
each channel
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1 or 7)
I
L
= 1.8 A
T
j
=25 °C:
R
ON
T
j
=150 °C:
each channel
Nominal load current, ISO Norm (pin 4 to 1 or 7)
V
ON
= 0.5 V,
T
C
= 85 °C
each channel:
I
L(ISO)
both channels parallel:
Output current (pin
1
or 7) while GND disconnected
or GND pulled up,
V
bb
=30 V,
V
IN
= 0, see diagram
page 7
Turn-on time
IN
to 90%
V
OUT
:
Turn-off time
IN
to 10%
V
OUT
:
R
L
= 12
Ω
,
T
j
=-40...+150°C
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
Ω
,
T
j
=-40...+150°C
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
Ω
,
T
j
=-40...+150°C
Operating Parameters
T
j
=-40...+150°C:
Operating voltage
5
)
T
j
=-40...+150°C:
Undervoltage shutdown
T
j
=-40...+150°C:
Undervoltage restart
Undervoltage restart of charge pump
see diagram page 10
Undervoltage hysteresis
∆
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
T
j
=-40...+150°C:
Overvoltage shutdown
T
j
=-40...+150°C:
Overvoltage restart
T
j
=-40...+150°C:
Overvoltage hysteresis
T
j
=-40...+150°C:
Overvoltage protection
6
)
I
bb
=40 mA
T
j
=-40...+25°C
:
Standby current (pin 4)
V
IN
=0
T
j
= 150°C:
Leakage output current (included in
I
bb(off)
)
V
IN
=0
Operating current (Pin 2)
7)
,
V
IN
=5 V
both channels on,
T
j
=-40...+150°C
5)
6)
--
160
320
200
400
--
--
10
mΩ
I
L(GNDhigh)
1.8
3.5
--
2.3
4.4
--
A
mA
µs
t
on
t
off
dV /dt
on
-dV/dt
off
80
80
0.1
0.1
200
200
--
--
400
400
1
1
V/µs
V/µs
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
∆
V
bb(under)
5.0
3.5
--
--
--
24
23
--
42
--
--
--
--
--
--
--
5.6
0.2
--
--
0.5
47
14
17
--
4
24
5.0
5.0
7.0
--
34
--
--
--
30
35
12
6
V
V
V
V
V
V
V
V
V
µA
µA
mA
V
bb(over)
V
bb(o rst)
∆
V
bb(over)
V
bb(AZ)
I
bb(off)
I
L(off)
I
GND
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
≈
V
bb
- 2 V
See also
V
ON(CL)
in table of protection functions and circuit diagram page 7.
Semiconductor Group
3
BTS 610 L1
Parameter and Conditions,
each channel
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
--
2
3
Unit
Operating current (Pin 2)
7)
one channel on,
T
j
=-40...+150°C:
Protection Functions
Initial peak short circuit current limit
(pin 4 to 1 or 7)
I
GND
mA
I
L(SCp)
8
6
3.5
11.5
9
6
5
--
10
--
610
15
12
7.5
--
--
--
32
--
A
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Repetitive short circuit shutdown current limit
T
j
=
T
jt
(see timing diagrams, page 9)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 4 to 2)
8
)
Reverse battery voltage drop
(V
out
> V
bb
)
I
L
= -1.8 A, each channel
T
j
=150 °C:
I
L(SCr)
T
jt
∆T
jt
-V
bb
-V
ON(rev)
--
150
--
--
--
A
°C
K
V
mV
Diagnostic Characteristics
Open load detection current
(on-condition, )
T
j
=-40 °C
:
I
L (OL)
T
j
=25..150°C:
10
10
2
--
--
3
200
150
4
mA
V
Open load detection voltage
9
) (off-condition)
V
OUT(OL)
T
j
=-40..150°C:
Internal output pull down
(pin 1
or
7 to 2),
V
OUT
=5 V,
T
j
=-40..150°C
R
O
4
10
30
kΩ
7
)
8
)
9)
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
Requires 150
Ω
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
External pull up resistor required for open load detection in off state.
Semiconductor Group
4
BTS 610 L1
Parameter and Conditions,
each channel
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Input and Status Feedback
10
)
Input resistance
T
j
=-40..150°C, see circuit page 6
Input turn-on threshold voltage
T
j
=-40..+150°C:
T
j
=-40..+150°C:
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 3 or 6),
V
IN
= 0.4 V,
T
j
=-40..+150°C
On state input current (pin 3 or 6),
V
IN
= 3.5 V,
T
j
=-40..+150°C
Delay time for status with open load after switch
off (other channel in off state)
(see timing diagrams,
page 10
),
T
j
=-40..+150°C
Delay time for status with open load after switch
off (other channel in on state)
(see timing diagrams, page 10
),
T
j
=-40..+150°C
Status invalid after positive input slope
Tj=-40
... +150°C:
(open load)
Status output (open drain)
Zener limit voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
T
j
=-40...+25°C,
I
ST
= +1.6 mA:
ST low voltage
T
j
= +150°C,
I
ST
= +1.6 mA:
R
I
V
IN(T+)
V
IN(T-)
∆
V
IN(T)
I
IN(off)
I
IN(on)
t
d(ST OL4)
t
d(ST OL5)
t
d(ST)
2.5
1.7
1.5
--
1
20
100
--
--
3.5
--
--
0.5
--
50
320
5
200
6
3.5
--
--
50
90
800
20
600
kΩ
V
V
V
µA
µA
µs
µs
µs
V
ST(high)
V
ST(low)
5.4
--
--
6.1
--
--
--
0.4
0.6
V
10)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
Semiconductor Group
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
