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SI-5155S

产品描述High-side Power Switch with Diagnostic Function
产品类别模拟混合信号IC    驱动程序和接口   
文件大小26KB,共2页
制造商SANKEN
官网地址http://www.sanken-ele.co.jp/en/
下载文档 详细参数 全文预览

SI-5155S概述

High-side Power Switch with Diagnostic Function

SI-5155S规格参数

参数名称属性值
厂商名称SANKEN
零件包装代码SFM
包装说明,
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
内置保护OVER CURRENT; THERMAL
接口集成电路类型BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码R-PZFM-T5
功能数量1
端子数量5
最高工作温度100 °C
最低工作温度-40 °C
输出电流流向SOURCE
标称输出峰值电流2.5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
认证状态Not Qualified
最大供电电压30 V
最小供电电压6 V
标称供电电压14 V
表面贴装NO
温度等级INDUSTRIAL
端子形式THROUGH-HOLE
端子位置ZIG-ZAG
断开时间30 µs
接通时间30 µs

文档预览

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High-side Power Switch with Diagnostic Function SI-5155S
Features
q
Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
q
Low saturation PNP transistor use
q
Allows direct driving using LS-TTL and C-MOS logic levels
q
Built-in overcurrent and thermal protection circuits
q
Built-in protection against reverse connection of power supply
q
Tj = 150ºC guaranteed
q
TO-220 equivalent full-mold package not require insulation mica
External Dimensions
(unit: mm)
10
±0.2
3.2
±0.2
4.2
±0.2
2.8
±0.2
4.0
±0.2
7.9
±0.2
16.9
±0.3
a
b
2.6
±0.1
(Ta=25ºC)
Ratings
–13 to +40
–0.3 to V
B
6
40
2.5
22
1.8
–40 to +150
–40 to +100
–40 to +150
Unit
V
V
V
V
A
W
W
ºC
ºC
ºC
With infinite heatsink (Tc=25ºC)
Stand-alone without heatsink
1
2
3
4
5
Parameter
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Output current
Power dissipation
Symbol
V
B
V
IN
V
DIAG
V
CE
I
O
P
D1
P
D2
Conditions
P1.7
±0.15
• 4
0.85
–0.1
4
±0.6
+0.2
0.45
–0.1
+0.2
1. GND
2. V
IN
3. Vo
4. DIAG
5. V
B
a: Type No.
b: Lot No.
(Forming No. 1111)
Junction temperature
Operating temperature
Storage temperature
Tj
T
OP
Tstg
Standard Circuit Diagram
V
B
5
Electrical Characteristics
Ratings
Parameter
Operating power supply voltage
Quiescent circuit current
Saturation voltage of output
transistor
Output leak current
Output ON
Input voltage
Output OFF
Output ON
Input current
Output OFF
Overcurrent protection starting
current
Thermal protection starting
temperature
Open load detection resistor
Output transfer time
T
OFF
V
DH
DIAG output voltage
V
DL
T
PLH
DIAG output transfer time
T
PHL
Minimum load inductance
L
1
30
0.3
30
4.5
15
30
6
I
IL
I
S
–0.1
2.6
V
IL
I
IH
–0.3
0.8
1
Symbol
V
Bopr
Iq
V
CE (sat)
0.72
I
O
, leak
V
IH
2.0
2
V
B
min
6.0
5
typ
max
30
12
0.3
(Ta=25ºC unless otherwise specified)
Unit
V
mA
V
V
mA
V
V
mA
mA
A
V
Bopr
= 14V, V
IN
= 0V
I
O
1.0A, V
Bopr
= 6 to 16V
I
O
2.5A, V
Bopr
= 6 to 16V
V
CEO
= 16V, V
IN
= 0V
V
Bopr
= 6 to 16V
V
Bopr
= 6 to 16V
V
IN
= 5V
V
IN
= 0V
V
Bopr
= 14V, V
O
= V
Bopr
–1.5V
Conditions
V
IN
2
LS-TTL
or
CMOS
V
O
3.6
±0.5
Absolute Maximum Ratings
0.94
±0.15
2.9
–0.3
+0.2
20 max
P
Z
V
CC
SI-5155S
3
DIAG
4
5.1kΩ
Load
GND
Overheat
Normal
1
Truth table
V
IN
V
O
H
L
H
L
Diagnostic Function
Normal
Open load
Shorted load
T
TSD
Ropen
T
ON
150
30
8
30
ºC
kΩ
µS
µS
V
V
µS
µS
mH
V
Bopr
6V
V
Bopr
= 6 to 16V
V
Bopr
= 14V, I
O
= 1A
V
Bopr
= 14V, I
O
= 1A
V
CC
= 6V, V
Bopr
= 6 to 16V
V
CC
= 6V, V
Bopr
= 6 to 16V, I
DO
= 2mA
V
Bopr
= 14V, I
O
= 1A
V
Bopr
= 14V, I
O
= 1A
V
IN
V
O
DIAG
Mode
Normal
Note:
* The rule of protection against reverse connection of power supply is V
B
= –13V, one minute
(all terminals except, V
B
and GND, are open).
Open load
Shorted load
Overheat
V
IN
L
H
L
H
L
H
L
H
V
O
L
H
H
H
L
L
L
L
DIAG
L
H
H
H
L
L
L
L
q
DIAG output will be undetermined when a voltage
exceeding 25V is applied to V
B
terminal.
28

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