Addendum for PCN 2004-018-A
BTS 5240 L
Addendum for PCN-Datasheet 2004-018-A: BTS 5240 L
This Addendum and PCN-Datasheet refers to the PCN 2004-018-A:
“Minor datasheet adaption for BTS 5240 L, BTS 5240 G, BTS 5440 G “.
The PCN-datasheet attached will be valid starting from August 2004.
There are the following changes in the datasheet (on page 7):
Old:
Current limit adjustment threshold voltage
New:
Current limit adjustment threshold voltage
Symbol
V
CLA(T-)
min
2.0
-
typ
-
-
max
-
4.0
Unit
V
Symbol
V
CLA(T-)
min
2.6
-
typ
-
-
max
-
3.6
Unit
V
PCN 2004-018-A:
BTS 5240L
Smart High-Side Power Switch
Two Channels: 2 x 25mΩ
IntelliSense
Product Summary
Operating voltage
V
bb(on)
Active channels
On-state resistance
Nominal load current
Current limitation
Low
High
R
ON
I
L(nom)
I
L(SCr)
one
25
6
10
40
4,5...28
( Loaddump: 40 V )
two parallel
13
9,1
mΩ
A
A
V
Package
P-DSO-12-2
General Description
•
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
•
Providing embedded protective functions.
•
Extern adjustable current limitation.
Application
•
•
•
•
All types of resistive, inductive and capacitive loads
µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads
Due to the adjustable current limitation best suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
•
Very low standby current
•
CMOS compatible input
•
Improved electromagnetic compatibility (EMC)
•
Stable behaviour at low battery voltage
Block Diagram
Vbb
IN1
IS1
IN2
IS2
Logic
Channel 1
Channel 2
Protection Functions
•
Reverse battery protection with external resistor
•
Short circuit protection
•
Overload protection
•
Current limitation
•
Thermal Shutdown
•
Overvoltage protection with external resistor
•
Loss of GND and loss of
V
bb protection
•
Electrostatic discharge Protection (ESD)
Load 1
Load 2
CLA
GND
Diagnostic Function: IntelliSense
•
Proportional load current sense ( with defined fault signal during thermal shutdown and overload )
•
Additional open load detection in OFF - state
•
Suppressed thermal toggling of fault signal
Page 1
2004-Mar-08
PCN 2004-018-A:
BTS 5240L
Functional diagram
GND
overvoltage
protection
internal
voltage
supply
logic
gate control
+
charge
pump
current limit
V
bb
clamp for
inductive load
OUT1
temperature
sensor
IN1
IS1
ESD
openload
detection
current
sense
Channel 1
CLA
LOAD
IN2
IS2
control and protection circuit
equivalent to
channel 2
OUT2
Page 2
2004-Mar-08
PCN 2004-018-A:
BTS 5240L
Pin definition and function
Pin
2
5
3
4
1
6,12,
heat
slug
7
8,9
10,11
CLA
OUT2
OUT1
Symbol
IN1
IN2
IS1
IS2
GND
V
bb
Diagnostic feedback 1 & 2
of channel 1,2
On state: advanced current sense with defined signal in case
of overload or short circuit
Off state: High on failure
Ground
of chip
Positive power supply voltage.
Design the wiring for the
simultaneous max. short circuit currents from channel 1 to 2 and
also for low thermal resistance
Current limit adjust,
the current limit for both channels can be
chosen as high ( potential < 2,6V ) or low ( potential > 3,6V ).
Output 1,2
protected high-side power output of channel 1,2.
Design the wiring for the max. short circuit current.
Function
Input 1,2
activates channel1,2 in case of logic high signal
Pin configuration
(top view)
GND
IN1
IS1
IS2
IN2
V
bb
1
2
3
4
5
6
V
bb
*
12
11
10
9
8
7
V
bb
OUT1
OUT1
OUT2
OUT2
CLA
* heat slug
Page 3
2004-Mar-08
PCN 2004-018-A:
BTS 5240L
Maximum Ratings
at
T
j
=25°C, unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 6)
Symbol
V
bb
Value
28
1)
28
2)
52
Unit
V
Supply voltage for full short circuit protection;
T
j
= -40...150°C
V
bb(SC)
Maximum voltage across DMOS
V
ON
Load dump protection
3)
V
LoadDump4)
=
V
A
+
V
S
;
V
A
= 13,5 V
In = low or high;
t
d
= 400 ms;
R
I4)
= 2
Ω
R
L
= 2.25
Ω
R
L
= 6.8
Ω
Load current (Short - circuit current, see page 7)
Operating temperature range
Storage temperature range
Dynamical temperature rise at switching
Power dissipation
6)
(DC), one channel active
Maximal switchable inductance, single pulse
V
bb
=12V,
T
jstart
=150°C;
(see diagrams on page 12)
V
Loaddump
40
53
I
L
T
j
T
stg
dT
I
L(lim)5)
-55...+150
60
1,4
K
W
mH
9.8
5.2
1.0
2.0
4.0
V
IN
V
CLA
I
CLA
I
IN
I
IS
-10...16
-10...16
±5.0
±5.0
-5...+10
mA
V
kV
A
-40...+150 °C
T
A
= 85 °C
P
tot
Z
L(s)
I
L
= 6 A,
E
AS
= 0.319 J,
R
L
= 0
Ω,
I
L
= 12 A,
E
AS
= 0.679 J,
R
L
= 0
Ω,
Electrostatic discharge
voltage
(Human Body Model)
one channel:
two parallel channels:
IN:
V
ESD
IS:
OUT:
according to ANSI EOS/ESD - S5.1 - 1993 , ESD STM5.1 - 1998
Continuous input voltage
Voltage at current limit adjustment pin
Current through current limit adjustment pin
Current through input pin (DC)
Current through sense (DC)
(see page 11)
118...28 V for 100 hours
2only single pulse,
R
= 200 m
Ω
;
L
= 8 µH ; R and L are describing the complete circuit impedance including
L
line, contact and generator impedances.
3Supply voltage higher than
V
bb(AZ) require an external current limit for the GND(150
Ω
resistor) and sense pin.
4
R
= internal resistance of the load dump test pulse generator.
I
5
Current limit is a protection function. Operation in current limitation is considered as "outside" normal operating
range. Protection functions are not designed for continuous repetitive operation.
6Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
Page 4
2004-Mar-08
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