CYStech Electronics Corp.
5.0Amp. Surface Mount Schottky Barrier Diodes
Spec. No. : C337SB
Issued Date : 2005.12.07
Revised Date :2010.11.04
Page No. : 1/7
SMB520-5100SB Series
Features
•
For surface mounted applications.
•
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
•
Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0
•
Low leakage current
•
High surge capability
•
Exceeds environmental standards of MIL-S-19500/228
Mechanical Data
•
Case: Molded plastic, SMB/JEDEC DO-214AA.
•
Terminals: Solder plated, solderable per MIL-STD-750 method 2026
•
Polarity: Indicated by cathode band.
•
Mounting Position : Any.
•
Weight: 0.0878 gram
Maximum Ratings and Electrical Characteristics
(
Rating at 25°C ambient temperature unless otherwise specified. )
Parameter
Repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum instantaneous
forward voltage, I
F
=5A
(Note 1)
Average forward rectified current
Peak forward surge current @8.3ms
single half sine wave superimposed
on rated load (JEDEC method)
Maximum DC reverse current
V
R
=V
RRM
,T
A
=25
℃
(Note)
V
R
=V
RRM
,T
A
=125
℃
(Note)
Maximum thermal resistance,
Junction to Lead
Diode junction capacitance @
f=1MHz and applied 4VDC reverse
voltage
Storage temperature
Operating temperature
Symbol SMB
520
V
RRM
20
V
RMS
14
V
R
20
V
F
I
O
I
FSM
0.55
SMB
530
30
21
30
0.55
SMB
540
40
28
40
0.55
Type
SMB
550
50
35
50
0.7
5
150
SMB
560
60
42
60
0.7
SMB
580
80
56
80
0.85
SMB
5100
100
70
100
0.85
Units
V
V
V
V
A
A
I
R
R
th,JL
C
J
Tstg
T
J
0.5
50
12 (typ)
380(typ)
-55 ~ +150
-55 ~ +125
-55 ~ +150
mA
mA
℃
/W
pF
℃
℃
Notes : Pulse test, pulse width=300μsec, 2% duty cycle
SMB520-5100SB
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Forward Current Derating Curve
6
160
Peak Forward Surge Current---I
FSM
(A)
140
120
100
80
60
40
20
0
Spec. No. : C337SB
Issued Date : 2005.12.07
Revised Date :2010.11.04
Page No. : 2/7
Maximum Non-Repetitive Forward Surge Current
Average Forward Current---Io(A)
5
4
3
2
1
0
0
50
100
SMB520-540
SMB550-5100
Tj=25℃, 8.3ms Single Half
Sine Wave
JEDEC method
150
200
1
10
100
Ambient Temperature---T
A
(℃)
Number of Cycles at 60Hz
Forward Current vs Forward Voltage
100
1400
Junction Capacitance vs Reverse Voltage
10
SMB550-560
Junction Capacitance---C
J
(pF)
SMB520-540
1200
1000
800
600
400
200
0
0.01
Forward Current---I
F
(A)
1
SMB580-5100
Tj=25℃, Pulse width=300μs,
1% Duty cycle
0.1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
Forward Voltage---V
F
(V)
1.3
1.5
0.1
1
10
100
Reverse Voltage---V
R
(V)
Reverse Leakage Current vs Reverse Voltage
100
Reverse Leakage Current---I
R
(mA)
10
Tj=75℃
1
0.1
Tj=25℃
0.01
0
20
40
60
80
100 120 140
Percent of Rated Peak
Reverse Voltage---(%)
SMB520-5100SB
CYStek Product Specification
CYStech Electronics Corp.
Recommended temperature profile for IR reflow
Spec. No. : C337SB
Issued Date : 2005.12.07
Revised Date :2010.11.04
Page No. : 5/7
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak
temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
SMB520-5100SB
CYStek Product Specification
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