SID10N30-600I
Elektronische Bauelemente
5.8A, 300V, R
DS(ON)
600 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize a high
cell density trench process to provide Low R
DS(on)
and
to ensure minimal power loss and heat dissipation.
TO-251P
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed.
High performance trench technology.
A
B
C
D
GE
APPLICATION
DC-DC converters, power management in portable and
battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
M
K
F
H
J
P
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
2.20
2.40
0.40
0.60
6.80
7.20
4.00
REF.
G
H
J
K
M
P
Millimeter
Min.
Max.
6.00
6.30
0.90
1.50
2.30
0.60
0.90
0.70
1.20
0.40
0.60
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
T
C
=25°C
T
C
=25°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Rating
300
±20
5.8
20
10
40
-55 ~ 175
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage Temperature Range
Thermal Resistance Data
Maximum Junction to Ambient
1
Maximum Junction to Case
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
R
θJA
R
θJC
62.5
3.75
°C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Dec-2012 Rev. B
Page 1 of 4
SID10N30-600I
Elektronische Bauelemente
5.8A, 300V, R
DS(ON)
600 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
FS
V
SD
Min
Static
1
-
-
-
10
-
-
-
-
Typ
-
-
-
-
-
-
-
10
0.8
Max
3.5
±10
1
25
-
600
900
-
-
Unit
V
nA
μA
A
mΩ
S
V
Test conditions
V
DS
=V
GS
, I
D
=250μA
V
DS
=0, V
GS
=±20V
V
DS
=240V, V
GS
=0
V
DS
=240V, V
GS
=0, T
J
=55°C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=2.9A
V
GS
=5.5V, I
D
=2.6A
V
DS
=15V,
,
I
D
=2.9A
I
S
=5A, V
GS
=0
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
13.5
4.1
3.4
12.1
13.3
28.9
16.8
1092
90
52
-
-
-
-
-
-
-
-
-
-
pF
nS
nC
I
D
=2.9A
V
DS
=120V
V
GS
=10V
V
DD
=120V
V
GEN
=10V
R
L
=41.4Ω
I
D
=2.9A
R
GEN
=6Ω
V
GS
=0
V
DS
=15V
f =1MHz
Notes:
1 Pulse test：PW
≦
300 us duty cycle
≦
2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Dec-2012 Rev. B
Page 2 of 4
SID10N30-600I
Elektronische Bauelemente
5.8A, 300V, R
DS(ON)
600 m
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Dec-2012 Rev. B
Page 3 of 4
SID10N30-600I
Elektronische Bauelemente
5.8A, 300V, R
DS(ON)
600 m
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Dec-2012 Rev. B
Page 4 of 4
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