SGM2310B
Elektronische Bauelemente
2.7A , 60V , R
DS(ON)
100 m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SGM2310B utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device. The
SGM2310B is universally used for all commercial-industrial
applications.
SOT-89
A
Top View
CB
1
2
3
4
FEATURES
K
E
L
D
Simple Drive Requirement
Small Package Outline
F
G
REF.
A
B
C
D
E
F
H
Millimeter
Min.
Max.
4.40
4.60
4.05
4.25
2.40
2.60
1.40
1.60
3.00 REF.
0.40
0.52
REF.
G
H
J
K
L
J
1.Gate
2.Drain
3.Source
Millimeter
Min.
Max.
-
-
0.89
1.20
0.35
0.41
0.70
0.80
1.50 REF.
MARKING
2310B
= Date code
PACKAGE INFORMATION
Package
SOT-89
MPQ
3K
Leader Size
7 inch
TOP VIEW
G
D
S
ABSOLUTE MAXIMUM RATINGS
(
T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
, V
GS
@10V
Pulsed Drain Current
2
Power Dissipation
3
Linear Derating Factor
Operating Junction and Storage Temperature Range
T
j
, T
stg
T
A
=25°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Ratings
60
±20
2.7
2.2
10
1.25
0.01
-55~150
Unit
V
V
A
A
W
°C / W
°C
Thermal Resistance Rating
Maximum Junction to Ambient
1
R
θJA
100
°C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Nov-2014 Rev. B
Page 1 of 4
SGM2310B
Elektronische Bauelemente
2.7A , 60V , R
DS(ON)
100 m
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Forward Transconductance
Gate-Body Leakage Current
Drain-Source Leakage
Current
T
J
=25°C
T
J
=55°C
Symbol
BV
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
Min.
60
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
13
-
-
-
-
-
5
1.68
1.9
1.6
7.2
25
14.4
511
38
25
Max.
-
2.5
-
Unit
V
V
S
nA
μA
Teat Conditions
V
GS
=0, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=5V, I
D
=2A
V
GS
=
±
20V
V
DS
=48V, V
GS
=0
V
DS
=48V, V
GS
=0
V
GS
=10V, I
D
=2.5A
V
GS
=4.5V, I
D
=1.5A
V
DS
=48V,
V
GS
=4.5V,
I
D
=2A
V
DD
=30V,
V
GS
=10V,
R
G
=3.3Ω,
I
D
=2A
V
GS
=0,
V
DS
=15V,
f=1.0MHz
Static
±
100
1
5
100
110
-
-
-
-
-
-
-
-
-
-
Drain-Source On-Resistance
2
Total Gate Charge
Gate-Source Charge
Gate-Drain (‘’Miller’’)Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage
2
Continuous Source Current
1.4
Pulsed Source Current
2.4
Reverse Recovery Time
Reverse Recovery Charge
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
Ciss
Coss
Crss
mΩ
nC
nS
pF
Source-Drain Diode
V
SD
I
S
I
SM
T
RR
Q
RR
-
-
-
-
-
-
-
-
9.7
5.8
1.2
2.7
10
-
-
V
A
nS
nC
I
S
=1A, V
GS
=0
V
G
=V
D
=0, Force Current
I
S
=2A, dI/dt=100A/μs
V
GS
=0
Notes:
1. Surface mounted on FR4 board , t
≦10sec.
2. The data tested by pulsed , pulse width≦300μs, duty cycle≦2%
3. The power dissipation is limited by 150 °C junction temperature
4. The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Nov-2014 Rev. B
Page 2 of 4
SGM2310B
Elektronische Bauelemente
2.7A , 60V , R
DS(ON)
100 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Nov-2014 Rev. B
Page 3 of 4
SGM2310B
Elektronische Bauelemente
2.7A , 60V , R
DS(ON)
100 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Nov-2014 Rev. B
Page 4 of 4
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