BTS 441 R
Smart Highside Power Switch
One Channel: 20mΩ
Status Feedback
Product Summary
On-state Resistance
Operating Voltage
Nominal load current
Current limitation
RON
Vbb(on)
IL(ISO)
IL(lim)
20mΩ
4.75 ... 41V
21A
65A
Package
TO-263-5-2
TO-220-5-12
SMD
Straight
General Description
•
•
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically
integrated in Smart SIPMOS
®
technology.
Providing embedded protective functions.
Application
•
•
•
•
µC
compatible power switch for 5V, 12 V and 24 V DC applications
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Funktions
•
•
•
•
•
Very low standby current
Optimized static
electromagnetic compatibility
(EMC)
µC and CMOS compatible
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Protection Functions
•
•
•
•
•
•
•
•
Short circuit protection
Current limitation
Overload protection
Thermal shutdown
Overvoltage protection (including load dump) with external
GND-resistor
Reverse battery protection with external GND-resistor
Loss of ground and loss of
V
bb protection
Electrostatic discharge
(ESD) protection
Vbb
IN
ST
Logic
with
protection
functions
OUT
Load
Diagnostic Function
•
•
•
Diagnostic feedback with open drain output
Open load detection in OFF-state
Feedback of thermal shutdown in ON-state
PROFET
GND
Infineon Technologies AG
1
2003-Oct-01
BTS 441 R
Functional diagram
overvoltage
protection
internal
voltage supply
logic
gate
control
+
charge
pump
current limit
VBB
clamp for
inductive load
OUT
IN
ESD
ST
GND
temperature
sensor
Open load
detection
LOAD
PROFET
Pin Definitions and Functions
Pin
1
2
3
4
5
Tab
Symbol
GND
IN
Vbb
ST
OUT
Vbb
Function
Logic ground
Input,
activates the power switch in
case of logical high signal
Positive power supply voltage
The tab is shorted to pin 3
Diagnostic feedback,
low on failure
Output
to the load
Positive power supply voltage
The tab is shorted to pin 3
Pin configuration
(top view)
Tab = V
BB
1
2
(3)
4
5
GND IN
ST OUT
Infineon Technologies AG
2
2003-Oct-01
BTS 441 R
Maximum Ratings
at T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
Load dump protection
1)
V
LoadDump
=
V
A
+
V
s
,
V
A
= 13.5 V
R
I
2)
= 2
Ω,
R
L
= 0,5
Ω,
t
d
= 200 ms, IN= low or high
Load current (Short-circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC) ; TC≤25°C
Maximal switchable inductance, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.
(see diagram, p.7)
I
L(ISO)
= 21 A, RL= 0
Ω:
E
4)
AS
=0.7J:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
Out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Symbol
V
bb
V
bb
V
Load dump3)
I
L
T
j
T
stg
P
tot
Z
L
V
ESD
Values
43
34
60
self-limited
-40 ...+150
-55 ...+150
125
2.1
1.0
4.0
8.0
-10 ... +16
±2.0
±5.0
≤
1
≤
75
≤
33
Unit
V
V
V
A
°C
W
mH
kV
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
V
IN
I
IN
I
ST
R
thJC
R
thJA
V
mA
Thermal resistance
chip - case:
junction - ambient (free air):
SMD version, device on pcb
5)
:
K/W
1)
2)
3)
4)
5)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND pin, e.g. with a 150
Ω
resistor in the GND connection. A resistor for the protection of the input is integrated.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
E
AS
is the maximum inductive switch off energy
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Infineon Technologies AG
3
2003-Oct-01
BTS 441 R
Electrical Characteristics
Parameter and Conditions
at
T
j
=-40...+150°C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance
(Vbb (pin3) to OUT (pin5)
);
I
L
= 2 A V
bb
≥7V
:
T
j
=25 °C:
R
ON
T
j
=150 °C:
see diagram page 9
--
15
28
21
--
90
110
--
--
20
37
--
2
200
250
1
1
mΩ
Nominal load current
(pin 3 to 5)
‘ISO 10483-1, 6.7:V
ON
=0.5V,
T
C
=85°C
I
L(ISO)
I
L(GNDhigh)
17
--
40
40
0.1
0.1
A
mA
µs
V/µs
V/µs
Output current
(pin 5)
while GND disconnected or
GND pulled up
6)
, V
bb
=30 V, V
IN
= 0,
see diagram page 7
Turn-on time
IN
Turn-off time
IN
R
L
= 12
Ω
,
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
Ω
,
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
Ω
,
Operating Parameters
Operating voltage
to 90%
V
OUT
:
t
on
to 10%
V
OUT
:
t
off
dV /dt
on
-dV/dt
off
T
j
=-40°C
V
bb(on)
T
j
=+25°C
T
j
=+105°C
6)
T
j
=+150°C
Overvoltage protection
7)
T
j
=-40°C:
V
bb(AZ)
I
bb
= 40 mA
T
j
=+25...+150°C:
Standby current (pin 3)
8)
T
j
=-40...+25°C
:
I
bb(off)
T
j
=+105°C
6)
:
V
IN
=0
see diagram page 9
T
j
=+150°C:
I
L(off)
Off-State output current (included in
I
bb(off)
)
V
IN
=0
Operating current (Pin 1)
9)
,
V
IN
=5 V,
I
GND
4.75
4.75
4.75
5.0
41
43
--
--
--
--
--
--
--
--
--
--
47
5
--
--
1.5
2
41
43
43
43
--
52
10
10
25
10
4
V
V
µA
µA
mA
6)
7)
8)
9)
not subject to production test, specified by design
see also
V
ON(CL)
in table of protection functions and circuit diagram page 7
Measured with load, typ. 40 µA when no load in off
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
Infineon Technologies AG
4
2003-Oct-01
BTS 441 R
Parameter and Conditions
at
T
j
=-40...+150°C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
10)
Current limit (pin 3 to 5)
(see timing diagrams, page 9)
Repetitive short circuit current limit
T
j
=
T
jt
(see timing diagrams, page 10)
Thermal shutdown time
11)12)
(see timing diagram on page 10)
T
j
=-40°C:
I
L(lim)
T
j
=25°C:
T
j
=+150°C:
I
L(SCr)
T
j,start
=25°C:
T
off(SC)
;
T
j
--
--
40
--
--
41
43
150
--
--
--
--
65
--
55
14
--
47
--
10
--
540
85
--
--
--
--
--
52
--
--
32
--
A
A
ms
V
°C
K
V
mV
=-40°C:
at VOUT = Vbb - VON(CL),
I
L= 40 mA
T
j
=25..150°C:
V
ON(CL)
Thermal overload trip temperature
T
jt
Thermal hysteresis
∆
T
jt
Reverse battery (pin 3 to 1)
13)
-V
bb
Reverse battery voltage drop (V
OUT
> V
bb
)
-V
ON(rev)
I
L
= -2A
T
j
=+150°C:
Output clamp
(inductive load switch off)
10
)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
11)
not subject to production test, specified by design
12)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
13)
Requires 150
Ω
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 1 and circuit page 7).
Infineon Technologies AG
5
2003-Oct-01
PCB设计
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