April 2001
SI3446DV
Single N-Channel, 2.5V Specified PowerTrench
®
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.
Features
•
6.2 A, 20 V. R
DS(on)
= 0.024
Ω
@ V
GS
= 4.5 V
R
DS(on)
= 0.032
Ω
@ V
GS
= 2.5 V
•
•
•
•
Fast switching speed.
Low gate charge (10.5nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
Applications
•
•
•
DC/DC converter
Load switch
Battery Protection
D
D
S
1
6
2
5
SuperSOT
TM
-6
D
D
G
3
4
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
Parameter
SI3446DV
20
±12
(Note 1a)
V
V
A
W
°C
6.2
20
1.6
0.8
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
.637
Device
FDC637AN
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
SI3446DV Rev. A1
FDC637AN
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250µA, Referenced to 25°C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
20
14
1
100
-100
V
mV/°C
µA
nA
nA
Gate-Body Leakage Current, Reverse V
GS
= -12 V, V
DS
= 0 V
(Note 2)
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
I
D
=250µA,Referenced to 125°C
V
GS
= 4.5 V,I
D
= 6.2 A
V
GS
= 4.5 V,I
D
= 6.2 A,T
J
=125°C
V
GS
= 2.5 V, I
D
= 5.2 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 6.2 A
0.4
0.82
-3
0.019
0.028
0.025
1.5
V
mV/°C
0.024
0.041
0.032
Ω
I
D(on)
g
FS
10
7.4
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
1125
290
145
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
9
13
26
11
18
24
42
20
16
ns
ns
ns
ns
nC
nC
nC
V
DS
= 5 V, I
D
= 6.2 A,
V
GS
= 4.5 V
10.5
1.5
2.2
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
1.3
0.7
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 78° C/W when mounted on a 1.0 in
2
pad of 2 oz. copper.
b) 156° C/W when mounted on a minimum pad of 2 oz.copper.
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
SI3446DV Rev. A1
FDC637AN
Typical Characteristics
20
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5
V
GS
= 4.5V
I
D
, DRAIN CURRENT (A)
16
3.0V
2.5V
2.0V
2
12
1.5
V
GS
= 2.0V
2.5V
3.0V
8
1
4.5V
4
1.5V
0
0
0.4
0.8
1.2
1.6
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.5
0
5
10
I
D
, DRAIN CURRENT (A)
15
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.5
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
0.08
R
DS(ON)
, ON RESISTANCE (OHM)
I
D
= 6.2A
V
GS
= 4.5V
I
D
= 6.2A
0.06
0.04
T
J
= 125 C
25 C
0.02
o
o
0
-25
0
25
50
75
100
o
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
20
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
15
25 C
o
100
125 C
o
I
S
, REVERSE DRAIN CURRENT (A)
T
J
= -55 C
o
V
GS
= 0
10
1
0.1
0.01
0.001
0.0001
T
J
= 125 C
25 C
-55 C
o
o
o
10
5
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
SI3446DV Rev. A1
FDC637AN
Typical Characteristics
(continued)
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 6.2A
4
CAPACITANCE (pF)
V
DS
= 5V
10V
15V
1800
1500
1200
900
600
300
0
0
2
4
6
8
10
12
14
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
C
rss
f = 1MHz
V
GS
= 0V
3
C
iss
2
1
0
Figure 7. Gate-Charge Characteristics
Figure 8. Capacitance Characteristics
100
5
100
µ
s
1ms
10ms
100ms
1s
DC
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 156 C/W
T
A
= 25 C
o
o
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
10
SINGLE PULSE
o
R
θJA
= 156 C/W
4
T
A
= 25 C
o
POWER (W)
3
1
2
0.1
1
0.01
0.1
1
10
100
0
0.1
1
10
SINGLE PULSE TIME (SEC)
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 156°C/W
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.00001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
SI3446DV Rev. A1
FDC637AN
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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