using Fairchild’s advanced PowerTrench process. It
has been optimized for battery power management
applications.
Features
•
–3.6 A, –30 V.
R
DS(ON)
= 75 mΩ @ V
GS
= –10 V
R
DS(ON)
= 125 mΩ @ V
GS
= –4.5 V
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
Battery management
•
Load switch
•
Battery protection
D
D
S
1
2
G
6
5
4
SuperSOT
TM
-6
D
D
3
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–30
±20
(Note 1a)
Units
V
V
A
W
°C
–3.6
–10
1.6
0.8
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
.455
Device
Si3455DV
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2003
Fairchild Semiconductor Corporation
Si3455DV Rev A1 (W)
Si3455DV
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,Referenced
to 25°C
V
DS
= –24 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
–30
Typ
Max Units
V
Off Characteristics
–22
–1
100
–100
mV/°C
µA
nA
nA
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,Referenced
to 25°C
V
GS
= –10 V,
I
D
= –3.6 A
I
D
= –2.7 A
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –3.6AT
J
=125°
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –3.6 A
–1
–1.9
4
63
100
90
–3
V
mV/°C
75
125
113
mΩ
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
–5
6
A
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
298
83
39
pF
pF
pF
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
6
13
11
6
12
23
20
12
5
ns
ns
ns
ns
nC
nC
nC
V
DS
= –15 V,
V
GS
= –.5 V
I
D
= –3.6 A,
3.6
1
1.2
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
–1.3
–0.8
–1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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