SBF4089ZDC

to 500MHz,

Cascadable

InGaP/GaAs

HBT MMIC

Amplifier

SBF4089Z

DC to 500MHz, CASCADABLE InGaP/GaAs

HBT MMIC AMPLIFIER

Package: SOT-89

Product Description

RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-

sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-

nology provides broadband performance up to 0.5GHz with excellent thermal

performance. The heterojunction increases breakdown voltage and minimizes leak-

age current between junctions. Cancellation of emitter junction non-linearities

results in higher suppression of intermodulation products. Only a single positive

supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke

are required for operation.

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Gain(dB)

Features



IP

3

=42dBm at 240MHz

Stable Gain Over

Temperature

Robust 1000V ESD, Class 1C

Operates From Single Supply

Low Thermal Resistance

Receiver IF Amplifier

Cellular, PCS, GSM, UMTS

PA Driver Amplifier

Wireless Data, Satellite

Terminals



S-Parameters vs Frequency +25c

16

15.5

15

14.5

14

13.5

13

12.5

12

11.5

11

0

100

200

300

400

500

600

700

800

Freq

-25

900

-20

-15

-10

s21

s11

s22

Applications

0



IRL,ORL(dB)



-5



Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

InP HBT

RF MEMS

LDMOS

Parameter

Small Signal Gain

Min.

Specification

Typ.

Max.

Unit

Condition

14.9

dB

70MHz

13.3

14.8

16.3

dB

240MHz

13.2

14.7

16.2

dB

500MHz

Output Power at 1dB Compression

20.1

dBm

70MHz

20.1

dBm

240MHz

18.4

19.9

dBm

400MHz

Output Third Order Intercept Point

40.0

dBm

70MHz

42.0

dBm

240MHz

39.0

41.0

dBm

400MHz

Input Return Loss

13.0

17.0

dB

500MHz

Output Return Loss

12.0

16.0

dB

500MHz

Noise Figure

3.3

4.3

dB

500MHz

Device Operating Voltage

4.5

4.9

5.3

V

Device Operating Current

82

90

98

mA

Thermal Resistance

43

°C/W

junction to lead

Test Conditions: V

S

=8V, I

D

=90mA Typ., T

L

=25°C. OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm, R

BIAS

=33. Data with Application Circuit.

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS111011

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 8

SBF4089Z

Absolute Maximum Ratings

Parameter

Device Current (I

D

)

Device Voltage (V

D

)

Max Operating Dissipated Power

Max Input Power Rating

Junction Temp (T

J

)

Operating Temp Range (T

L

)

Storage Temp

ESD Rating - Human Body Model

(HBM)

Rating

150

6

0.8

15

+150

-40 to +85

+150

Class 1C

Unit

mA

V

W

dBm

°C

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free

per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric

materials and red phosphorus as a flame retardant, and <2% antimony in

solder.

Caution! ESD sensitive device.

Moisture Sensitivity Level

MSL 2

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l and T

L

=T

LEAD

Typical RF Performance at Key Operating Frequencies

Parameter

Small Signal Gain

Output Third Order Intercept Point

Output Power at 1dB Compression

Input Return Loss

Output Return Loss

Reverse Isolation

Noise Figure

Unit

dB

dBm

dB

70MHz

14.9

40.0

20.1

18

15

18

3.2

100MHz

14.9

40.5

20.1

22

16

18

3.3

240MHz

14.9

42.5

20.1

22

17

18

3.3

400MHz

14.8

41.0

19.9

21

19

18

3.3

500MHz

14.7

40.0

20.1

21

18

3.3

850MHz

14.3

35.1

18.1

19

18

3.3

Test Conditions: V

S

=8V, I

D

=90mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm. T

L

=25°C, R

BIAS

=33, Z

S

=Z

L

=50, App circuit.

2 of 8

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS111011

SBF4089Z

P1dB vs Temp

20.5

Output Power (dBm)

20

45

43

41

39

37

35

33

31

29

27

25

50

TOIP vs Temp

19

18.5

18

17.5

17

50

250

450

Frequency(MHz)

+25c

-40c

+85c

TOIP (dB)

19.5

+25c

-40c

+85c

650

850

250

450

650

850

Frequency(MHz)

Noise Figure vs Temp

5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

50

NF (dB)

+25c

-40c

+85c

250

450

650

850

Frequency(MHz)

DS111011

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 8

SBF4089Z

Test Conditions: V

S

=8V, R

BIAS

=33, I

D

=90mA, T=+25°C,

S

11

vs. Frequency

-10

+25c

S

21

vs. Frequency

15.1

-40c

+85c

-12

-14

-16

16

-18

-20

-22

-24

0

100

200

300

400

500

600

700

15

14.9

14.8

+25c

-40c

+85c

Gain (dB)

14.7

14.6

14.5

14.4

14.3

14.2

14.1

S11 (dB)

)

800

900

0

200

400

600

800

1000

Frequency(MHz)

S

12

vs. Frequency

-16

-16.5

-17

-17.5

+25c

-40c

+85c

S

22

vs. Frequency

-12

+25c

-40c

+85c

-14

-18

-18.5

-19

-19.5

-20

0

100

200

300

400

500

600

700

800

900

Frequency(MHz)

Return Loss(

(dB)

-16

S12(dB)

)

-18

-20

-22

-24

0

100

200

300

400

500

600

700

800

900

Frequency(MHz)

Bias sweep vs Temp

100

90

80

+25c

-40c

+85c

Current (mA)

70

60

50

40

30

20

10

0

1

2

3

4

5

6

7

8

Source Voltage (V)

Note: Output Return Loss can be improved at low end of band with L1 selection.

4 of 8

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS111011

SBF4089Z

Application Circuit Schematic

V

S

R1 (R

BIAS

)

1 uF

1000

pF

C4

L1

R F in

C5

1

4

SBF4089Z

3

12nH

R F out

L2

C6

2

Application Circuit Element Values

Reference Designator

C5, C6

C4

L1

L2

70MHz

1uF

100pF

6.8uH

6.8nH

100MHz

1000pF

100pF

1.2uH

12nH

240MHz

1000pF

100pF

1.2uH

12nH

500MHz

220pF

100pF

68nH

6.8nH

850MHz

100pF

68pF

33nH

6.8nH

Recommended Bias Resistance for I

D

=90mA

Supply Voltage (V

S

) (Volts)

Bias Resistance ()

7.5

27

8

33

10

56

12

75

Note=R

BIAS

provides DC bias stability over temperature.

DS111011

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

5 of 8

参数名称	属性值
无铅	Yes
欧盟RoHS规范	Yes
状态	ACTIVE
端子涂层	MATTE 锡
微波射频类型	WIDE 波段低 POWER

	SBF4089Z	SBF4089ZPCK1	SBF4089ZSQ	SBF4089ZSR
描述	RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
状态	ACTIVE	ACTIVE	ACTIVE	ACTIVE
微波射频类型	WIDE 波段低 POWER	WIDE 波段低 POWER	WIDE 波段低 POWER	WIDE 波段低 POWER

SBF4089Z

SBF4089Z在线购买

SBF4089Z概述

SBF4089Z规格参数

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