SBA5086Z

DCto5GHz, CASCADABLE InGaP/GaAs HBT

MMIC AMPLIFIER

Package: SOT-86

Product Description

RFMD’s SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-

sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-

nology provides broadband performance up to 5GHz with excellent thermal

performance. The heterojunction increases breakdown voltage and minimizes leak-

age current between junctions. Cancellation of emitter junction non-linearities

results in higher suppression of intermodulation products. Only a single positive

supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke

are required for operation.

Optimum Technology

Matching® Applied

GaAs HBT

25

20

15

10

5

0

-5

-10

-15

-20

-25

-30

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5

6

Features



IP3=34.0dBm at 1950MHz

P

OUT

=13.3dBm at -45dBc

ACP IS-95 1950MHz

Robust 1000V ESD, Class 1C

Operates From Single Supply

Patented Thermal Design

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

Gain & Return Loss

Applications





GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

InP HBT

RF MEMS

LDMOS

S21

IF Amplifier

Wireless Data, Satellite

Terminals

S11

S22

Frequency (GHz)

Parameter

Small Signal Gain

Min.

17.5

15.7

Specification

Typ.

Max.

Unit

Condition

19.0

20.5

dB

850MHz

17.2

18.7

dB

1950MHz

Output Power at 1dB Compression

19.5

dBm

850MHz

18

19.5

dBm

1950MHz

Output Third Order Intercept Point

36.9

dBm

850MHz

32.0

34.0

dBm

1950MHz

Output Power

13.3

dBm

1950MHz, -45dBc ACP IS-95 9 Forward Channels

Bandwidth

5000

MHz

Return Loss >10dB

Input Return Loss

11.0

13.0

dB

1950MHz

Output Return Loss

14.0

19.0

dB

1950MHz

Noise Figure

4.5

5.5

dB

1950MHz

Device Operating Voltage

4.7

4.9

5.3

V

Device Operating Current

72

80

88

mA

Thermal Resistance (junction to lead)

102

°C/W

Test Conditions: V

S

=8V, I

D

=80mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm, R

BIAS

=39, T

L

=25°C, Z

S

=Z

L

=50

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS110722

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SBA5086Z

Absolute Maximum Ratings

Parameter

Device Current (I

D

)

Device Voltage (V

D

)

RF Input Power

Junction Temp (T

J

)

Operating Temp Range (T

L

)

Storage Temp

Operating Dissipated Power

Rating

130

6

+17

+150

-40 to +85

+150

0.65

Unit

mA

V

dBm

°C

W

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free

per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric

materials and red phosphorus as a flame retardant, and <2% antimony in

solder.

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l and T

L

=T

LEAD

Typical Performance at Key Operating Frequencies

Parameter

Small Signal Gain

Output Third Order Intercept

Point

Output Power at 1dB

Compression

Input Return Loss

Output Return Loss

Reverse Isolation

Noise Figure

Unit

dB

dBm

dB

100MHz

20.4

36.4

19.8

31

26

22.5

4.2

500MHz

20.1

36.2

19.7

20

26

22.8

4.5

850MHz

19.0

36.9

19.5

17.5

25

23

4.2

1950MHz

17.2

34.0

19.5

13.0

19.0

23

4.4

2400MHz

15.8

33.7

18.7

12.9

19

23

-

3500MHz

13.7

30.8

17.1

12.4

18.7

23

-

Test Conditions: V

S

=8V, I

D

=80mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm, R

BIAS

=39, T

L

=25°C, Z

S

=Z

L

=50

NF vs Frequency

OIP3 vs Frequency

40

38

36

34

7.00

6.50

6.00

5.50

5.00

4.50

4.00

3.50

3.00

2.50

2.00

1.50

1.00

0

0.5

1

1.5

2

2.5

3

Frequency (GHz)

IP3 (dB)

32

30

28

26

24

22

20

+25c

-40c

+85c

dB

+25c

-40c

+85c

3.5

0

0.5

1

1.5

2

2.5

3

3.5

Frequency (GHz)

P1dB vs Frequency

21

19

17

dBm

15

+25c

-40c

+85c

13

11

0

0.5

1

1.5

2

2.5

3

3.5

Frequency (GHz)

2 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS110722

SBA5086Z

|S

11

| vs. Frequency

0

-5

-10

s11(dB)

+25c

-40c

+85c

|S

21

| vs. Frequency

16

15

14

13

s21(dB)

-15

-20

-25

-30

-35

-40

0

1

2

3

Frequency (GHz)

12

11

10

9

8

7

6

+25c

-40c

+85c

4

5

6

0

1

2

3

Frequency (GHz)

4

5

6

|S

12

| vs. Frequency

-12

+25c

|S

22

| vs. Frequency

0

-5

-10

s22 (dB)

-15

-20

-25

+25c

-40c

-14

-16

s12(dB)

-40c

+85c

-18

-20

-22

-24

0

1

2

3

4

Frequency (GHz)

5

6

-30

-35

0

1

2

3

4

5

+85c

6

Frequency (GHz)

850MHz Adj. Chan. Pwr vs. Channel output Power

-30

-35

-40

ACP (dBc)

-30

-35

-40

-45

-50

-55

-60

-65

-70

5

6

1950MHz Adj. Chan. Pwr Vs Channel Output Power

ACP (dBc)

-45

-50

-55

-60

-65

-70

6

7

8

9

10 11 12 13

Channel Pwr (dBm)

14

15

16

17

+25c ACP

-40c ACP

+85c ACP

+25c

-40c

+85c

7

8

9

10

11

12

Channel Pwr (dBm)

13

14

15

16

DS110722

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 6

SBA5086Z

Basic Application Circuit

V

S

R

BIAS

1 uF

1000

pF

C

D

L

C

RF in

C

B

1

4

SBA5086Z

3

C

B

RF out

2

Evaluation Board Layout

V

S

R

BIAS

1 uF

1000 pF

L

C

D

C

B

BA4

C

B

Mounting Instructions:

1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown.

2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1

ounce copper on both sides.

Application Circuit Element Values

Reference Designator

C

B

C

D

L

C

500MHz

220pF

100pF

68nH

850MHz

100pF

68pF

33nH

1950MHz

68pF

22pF

22nH

2400MHz

56pF

22pF

18nH

3500MHz

39pF

15pF

15nH

Recommended Bias Resistor Values for I

D

=80mA, R

BIAS

=(V

S

-V

D

) /I

D

Supply Voltage (V

S

)

R

BIAS

7.5V

33

8V

39

10V

68

12V

91

Note: R

BIAS

provides DC bias stability over temperature.

4 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS110722

SBA5086Z

1

2, 4

3

Function

RF IN

GND

RF OUT/BIAS

Description

RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of opera-

tion.

Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as

possible.

RF output and bias pin. DC voltage is present on this pin, therefore a DC-blocking capacitor is necessary for

proper operation.

PCB Pad Layout

Dimensions in inches [millimeters]

DS110722

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

5 of 6

参数名称	属性值
端子数量	4
最小工作温度	-40 Cel
最大工作温度	85 Cel
状态	Active
微波射频类型	WIDE BAND MEDIUM POWER
功能数量	1
包装材料	PLASTIC/EPOXY
ckage_equivalence_code	SL,4GW-LD,.085CIR
wer_supplies__v_	4.9
sub_category	RF/Microwave Amplifiers
最大供电电压	88 mA
工艺	BIPOLAR

	SBA5086ZSQ	SBA5086Z	SBA5086ZPCK1	SBA5086ZSR
描述	RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER	RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER	RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER	RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
端子数量	4	4	4	4
最小工作温度	-40 Cel	-40 Cel	-40 Cel	-40 Cel
最大工作温度	85 Cel	85 Cel	85 Cel	85 Cel
状态	Active	Active	Active	Active
微波射频类型	WIDE BAND MEDIUM POWER	WIDE BAND MEDIUM POWER	WIDE BAND MEDIUM POWER	WIDE BAND MEDIUM POWER
功能数量	1	1	1	1
包装材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
ckage_equivalence_code	SL,4GW-LD,.085CIR	SL,4GW-LD,.085CIR	SL,4GW-LD,.085CIR	SL,4GW-LD,.085CIR
wer_supplies__v_	4.9	4.9	4.9	4.9
sub_category	RF/Microwave Amplifiers	RF/Microwave Amplifiers	RF/Microwave Amplifiers	RF/Microwave Amplifiers
最大供电电压	88 mA	88 mA	88 mA	88 mA
工艺	BIPOLAR	BIPOLAR	BIPOLAR	BIPOLAR

SBA5086ZSQ

SBA5086ZSQ概述

SBA5086ZSQ规格参数

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