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RS3G

产品描述3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB
产品类别半导体    分立半导体   
文件大小585KB,共3页
制造商Yenyo Technology Co., Ltd.
官网地址http://www.yenyo.com.tw/
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RS3G概述

3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB

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YENYO
Surface Mount Fast Recovery Rectifier
Voltage Range 50 to 1000 V
Current 3.0 Ampere
SMC/DO-214AB
RS3A THRU RS3M
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Glass passivated chip
Mechanical Data
Case: Molded plastic SMC/DO-214AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-750
method 2026
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 0.21 gram
.108(2.75)
.128(3.25)
.220(5.59)
.245(6.22)
.260(6.60)
.280(7.11)
.006(.152)
.012(.305)
.079(2.00)
.103(2.62)
.002(.051)
.008(.203)
.305(7.75)
.320(8.13)
.030(0.76)
.060(1.52)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMTER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
A
=90
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 3.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
SYMBOL
V
RRM
V
RMS
V
DC
IF
(AV)
RS3A
50
35
50
RS3B
100
70
100
RS3D
200
140
200
RS3G
400
280
400
3.0
RS3J
600
420
600
RS3K
800
560
800
RS3M UNIT
1000
700
1000
V
V
V
A
I
FSM
100
A
V
F
I
R
Trr
C
J
R
JA
T
J
, T
STG
150
1.3
5.0
150
250
50
55
-55 to + 150
o
V
uA
uA
500
nS
pF
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to ambient.
1/2
R1, MAY-12

RS3G相似产品对比

RS3G RS3B RS3D RS3J RS3K RS3M RS3A
描述 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 100 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 1000 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE

 
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