Si6463DQ
April 2001
Si6463DQ
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Features
•
–8.8 A, –20 V. R
DS(ON)
= 0.0125
Ω
@ V
GS
= –4.5 V
R
DS(ON)
= 0.018
Ω
@ V
GS
= –2.5 V
Extended V
GSS
range (±12V) for battery
applications
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
•
Applications
•
•
•
•
Load switch
Motor drive
DC/DC conversion
Power management
•
•
•
D
S
S
D
G
S
S
D
5
6
7
8
Pin 1
4
3
2
1
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±
12
(Note 1)
Units
V
V
A
W
°C
–8.8
–50
1.3
0.6
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
96
208
°C/W
Package Marking and Ordering Information
Device Marking
6463
Device
Si6463DQ
Reel Size
13’’
Tape width
16mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
Si6463DQ Rev. A(W)
Si6463DQ
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –16 V,
V
GS
= –12 V,
V
GS
= 12 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
–20
Typ
Max Units
V
Off Characteristics
–12
–1
–100
100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V, I
D
= –8.8 A
V
GS
= –2.5 V, I
D
= –7.2 A
V
GS
= –4.5 V, I
D
= –8.8 A, T
J
= 125°C
V
GS
= –4.5 V,
V
DS
= –10 V,
V
DS
= –5 V
I
D
= –8.8 A
–0.6
–0.8
3.5
10
14
13
–1.5
V
mV/°C
12.5
18
19
mΩ
A
–50
46
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
5045
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
1035
549
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
8
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
14
130
80
41
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –8.8 A,
7
11
16
25
208
128
66
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –1.2 A
Voltage
–1.2
(Note 2)
A
V
–0.6
–1.2
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
is 96°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R
θJA
is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si6463DQ Rev. A(W)
Si6463DQ
Typical Characteristics
30
V
GS
= -4.5V
25
20
15
10
5
0
0
0.5
1
1.5
-3.0V
-2.5V
-2.0V
2
1.8
V
GS
= -2.0V
1.6
1.4
-2.5V
1.2
1
0.8
0
6
12
18
24
30
-1.5V
-3.0V
-3.5V
-4.0V
-4.5V
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.035
1.5
1.4
1.3
I
D
= -8.8A
V
GS
= -4.5V
I
D
= -4.4A
0.03
0.025
1.2
1.1
1
0.9
0.01
0.8
0.7
-50
-25
0
25
50
75
100
o
0.02
T
A
= 125 C
0.015
T
A
= 25 C
o
o
0.005
125
150
1.5
2
2.5
3
3.5
4
4.5
5
T
J
, JUNCTION TEMPERATURE ( C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
50
V
DS
= -5V
40
125 C
30
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
T
A
= -55 C
o
25 C
10
o
V
GS
= 0V
T
A
= 125 C
1
25 C
-55 C
o
o
o
20
0.1
10
0.01
0
0.5
1
1.5
2
2.5
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6463DQ Rev. A(W)
Si6463DQ
Typical Characteristics
5
I
D
= -8.8A
4
-15V
3
V
DS
= -5V
-10V
8000
7000
6000
5000
4000
C
ISS
f = 1 MHz
V
GS
= 0 V
2
3000
2000
C
OSS
1
1000
0
0
10
20
30
40
50
C
RSS
0
0
3
6
9
12
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
100
µ
s
10ms
100ms
1s
10s
1
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 208 C/W
T
A
= 25 C
0.01
0.01
0.1
1
10
100
0
o
o
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R
θ
JA
= 208°C/W
T
A
= 25°C
R
DS(ON)
LIMIT
10
40
30
DC
20
0.1
10
0.01
0.1
1
10
100
1000
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 208 °C/W
P(pk)
0.01
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.1
t
1
, TIME (sec)
1
10
100
1000
0.001
0.0001
0.001
0.01
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6463DQ Rev. A(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
嵌入式系统
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