gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It is combined with a low
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter applications.
Features
•
–3.5 A, –20 V. R
DS(ON)
= 0.045
Ω
@ V
GS
= –4.5 V
R
DS(ON)
= 0.075
Ω
@ V
GS
= –2.5 V
•
V
F
< 0.55 V @ 1 A
•
High performance trench technology for extremely
low R
DS(ON)
•
Low profile TSSOP-8 package
Applications
•
DC/DC conversion
A
A
A
C
G
S
S
D
5
6
7
8
4
3
2
1
TSSOP-8
Pin 1
MOSFET Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
T
A
=25
o
C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
(Note 1)
Ratings
–
20
±
12
Units
V
V
A
P
D
T
J
, T
STG
– Pulsed
MOSFET Power Dissipation (minimum pad)
(Note 1)
Schottky Power Dissipation (minimum pad)
(Note 1)
Operating and Storage Junction Temperature Range
–
3.5
–
30
1.2
1.0
-55 to +150
W
°C
Schottky Maximum Ratings
V
RRM
I
F
I
FM
Repetitive Peak Reverse Voltage
Average Forward Current
Peak Forward Current
20
1.5
30
V
A
A
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(minimum pad)
(Note 1)
MOSFET: 115
Schottky: 130
°C/W
Package Marking and Ordering Information
Device Marking
6923
Device
Si6923DQ
Reel Size
13’’
Tape width
16mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
Si6923DQ Rev. A(W)
Si6923DQ
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,
Referenced to25°C
V
DS
= –16 V,
V
GS
= –12 V,
V
GS
= 12 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
–20
Typ
Max Units
V
Off Characteristics
–16
–1
–100
100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to25°C
V
GS
= –4.5 V, I
D
= –3.5 A
V
GS
= –2.5 V, I
D
= –2.7 A
V
GS
=–4.5 V, I
D
=–3.5A, T
J
=125°C
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –3.5A
–0.6
–1.0
3
36
56
49
–1.5
V
mV/°C
45
75
72
mΩ
I
D(on)
g
FS
–15
13.2
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
1015
446
118
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
I
GSSR
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –5 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
11
18
34
34
20
32
55
55
16
ns
ns
ns
ns
nC
nC
nC
V
DS
= –5V,
V
GS
= –4.5 V
I
D
= –3.5 A,
9.7
2.2
2.4
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Gate–Body Leakage, Reverse
V
GS
= 0 V,
V
GS
= 12 V,
I
S
= –1.25 A
V
DS
= 0 V
(Note 2)
–1.25
–0.6
–1.2
100
A
V
nA
Schottky Diode Characteristics
I
R
V
F
C
T
Reverse Leakage
Forward Voltage
Junction Capacitance
V
R
= 20V
I
F
= 1A
V
R
= 10V
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
0.6
1
0.48
0.42
50
50
8
0.55
0.50
µA
mA
V
V
pF
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
R
θJA
is 115
°C/W
for the MOSFET and 130°C/W for the Schottky Diode when mounted on a minimum pad.
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