gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (–2.5V to –8V).
Features
•
–2.5 A, –12 V,
R
DS(ON)
= 110 mΩ @ V
GS
= –4.5 V.
R
DS(ON)
= 180 mΩ @ V
GS
= –2.5V.
•
Extended V
GSS
range (±8V) for battery applications
•
Low gate charge (4.6nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
•
Low profile TSSOP-8 package
Applications
•
Load switch
•
Motor drive
•
DC/DC conversion
•
Power management
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
1
2
3
4
8
7
6
5
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–12
±8
(Note 1)
Units
V
V
A
W
°C
–2.5
–20
1.0
0.6
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
100
125
°C/W
Package Marking and Ordering Information
Device Marking
6943
2001
Fairchild Semiconductor Corporation
Device
Si6943DQ
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
Si6943DQ Rev. B (W)
Si6943DQ
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= –250
µA
Min
–12
Typ
Max Units
V
Off Characteristics
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –12 V,
V
GS
= –8 V,
V
GS
= 8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
I
D
= –250
µA
–13
–1
–100
100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
–0.6
–0.9
3
89
125
116
–1.5
V
mV/°C
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V, I
D
= –2.5 A
V
GS
= –2.5 V, I
D
= –1.9 A
V
GS
= –4.5 V, I
D
= –2.5 A, T
J
=125°C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –9 V,
I
D
= –2.5 A
110
180
154
mΩ
I
D(on)
g
FS
–10
7
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –6 V,
f = 1.0 MHz
V
GS
= 0 V,
509
97
43
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –6 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
9
12
17
8
18
22
31
16
6.4
ns
ns
ns
ns
nC
nC
nC
V
DS
= –6V,
V
GS
= –4.5 V
I
D
= –2.5 A,
4.6
1.1
0.7
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –1 A
(Note 2)
–1
0.8
–1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
b)
R
θJA
is 100°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
R
θJA
is 125°C/W (steady state) when mounted on a minimum copper pad on FR-4.
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