PROFET® BTS 308
Smart Highside Power Switch
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1
)
•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in OFF-state
•
CMOS compatible input
•
Loss of ground and loss of
V
bb
protection
•
Electrostatic discharge
(ESD) protection
Features
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
V
bb(AZ)
V
bb(on)
R
ON
I
L(ISO)
60
V
4.7 ... 34 V
300 mΩ
1.3
A
TO-220AB/5
5
5
1
Straight leads
1
5
Standard
SMD
• µC
compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
Most suitable for inductive loads
•
Replaces electromechanical relays, fuses and discrete circuits
•
Fast switching
•
Not suitable for lamp loads
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
Voltage
source
V
Logic
Voltage
sensor
3
Overvoltage
protection
Current
limit
Gate
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
OUT
2
IN
Temperature
sensor
5
ESD
Logic
Load
detection
Short circuit
detection
GND
4
ST
PROFET
Load GND
1
Signal GND
1
)
With external current limit (e.g. resistor R
GND
=150
Ω)
in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
Page 1 of 14
2003-Oct-01
BTS 308
Pin
1
2
3
4
5
Symbol
GND
IN
Vbb
ST
OUT
(Load, L)
-
I
+
S
O
Function
Logic ground
Input, activates the power switch in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback, low on failure
Output to the load
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Electrostatic discharge capability (ESD)
IN, ST:
(Human Body Model)
all other pins:
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
Symbol
V
bb
I
L
T
j
T
stg
P
tot
V
ESD
V
IN
I
IN
I
ST
Values
60
self-limited
-40 ...+150
-55 ...+150
50
1
tbd (>1)
-10 ... +16
±5.0
±5.0
≤
2.5
≤
75
Unit
V
A
°C
W
kV
V
mA
Thermal resistance
chip - case:
junction - ambient (free air):
R
thJC
R
thJA
K/W
Semiconductor Group
Page 2
2003-Oct-01
BTS 308
Electrical Characteristics
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 24 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 0.8 A,
V
bb
= 12V
T
j
=25 °C:
R
ON
T
j
=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V,
T
C
= 85 °C
Output current (pin
5
) while GND disconnected or
GND pulled up,
V
bb
=30 V,
V
IN
= 0, see diagram
page 7
Turn-on time to 90%
V
OUT
:
Turn-off time to 10%
V
OUT
:
R
L
= 47
Ω,
V
bb
= 12V,
T
j
=-40...+150°C
Slew rate on, 10 to 30%
V
OUT
,
R
L
= 47
Ω,
V
bb
= 12V,
T
j
=-40...+150°C
Slew rate off, 10 to 30%
V
OUT
,
R
L
= 47
Ω,
V
bb
= 12V,
T
j
=-40...+150°C
Operating Parameters
Operating voltage
2
)
Operating voltage slew rate
Undervoltage shutdown
I
L(ISO)
I
L(GNDhigh)
--
1.18
--
270
540
1.3
--
300
600
--
1
mΩ
A
mA
µs
t
on
t
off
dV /dt
on
-dV/dt
off
--
--
1
2
--
--
--
--
50
55
10
15
V/µs
V/µs
T
j
=-40...+150°C:
V
bb(on)
dV
bb
/dt
T
j
=25°C:
V
bb(under)
T
j
=-40...+150°C:
Undervoltage restart
T
j
=-40...+150°C:
V
bb(u rst)
Undervoltage restart of charge pump
V
bb(ucp)
see diagram page 11
T
j
=-40...+150°C:
Undervoltage hysteresis
∆V
bb(under)
∆V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
Overvoltage shutdown
T
j
=-40...+150°C:
V
bb(over)
Overvoltage restart
T
j
=-40...+150°C:
V
bb(o rst)
Overvoltage hysteresis
T
j
=-40...+150°C:
∆V
bb(over)
Overvoltage protection
3
)
T
j
=-40...+150°C:
V
bb(AZ)
I
bb
=10 mA
Standby current (pin 3)
,
I
bb(off)
V
IN
=0
T
j
=-40...+150°C:
Operating current (Pin 1)
4
)
,
V
IN
=5 V
I
GND
4.7
-1
2.9
2.7
--
--
--
34
34
--
59
--
--
--
--
4.9
0.2
--
--
0.5
70
34
+1
4.5
4.7
4.9
7.5
--
46
--
--
--
V
V/µs
V
V
V
V
V
V
V
V
µA
--
--
40
2
50
4
mA
2
)
3
)
4
)
At supply voltage increase up to
V
bb
= 4.9 V typ without charge pump,
V
OUT
≈V
bb
- 2 V
Meassured without load
.
See also
V
ON(CL)
in table of protection functions and circuit diagram page 7.
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
Semiconductor Group
Page 3
2003-Oct-01
BTS 308
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 24 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
5)
Initial peak short circuit current limit (pin 3 to 5)
6
)
,
I
L(SCp)
( max 100
µs
if
V
ON
>
V
ON(SC)
)
V
bb
= 12V
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Short circuit shutdown delay after input pos. slope
V
ON
>
V
ON(SC)
,
T
j
=-40..+150°C:
t
d(SC)
min value valid only, if input "low" time exceeds 60
µs
--
--
2.5
15
--
5
--
--
10
--
--
100
A
µs
V
V
°C
K
V
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
I
L
= 1 A,
T
j
=-40..+150°C:
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
7
)
Diagnostic Characteristics
Open load detection current
(included in standby current
I
bb(off)
)
V
ON(CL)
V
ON(SC)
T
jt
∆
T
jt
-V
bb
59
--
150
--
--
67
3.5
--
10
--
75
--
--
--
32
T
j
=-40...+150°C:
I
L(off)
T
j
=-40..150°C:
V
OUT(OL)
0
2
--
3
30
4
µA
V
Open load detection voltage
5
)
)
7
)
6
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Short circuit current limit for max. duration of t
d(SC) max
=100
µs,
prior to shutdown
Requires 150
Ω
resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is
normally limited by the connected load. Input and Status currents have to be limited (see max. ratings page
2 and circuit page 7).
Semiconductor Group
Page 4
2003-Oct-01
BTS 308
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 24 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Input and Status Feedback
8
)
Input resistance
R
I
see circuit page 6
Input turn-on threshold voltage
T
j
=-40..+150
V
IN(T+)
Input turn-off threshold voltage
T
j
=-40..+150°
V
IN(T-)
Input threshold hysteresis,
T
j
=-40..+150°C
∆
V
IN(T)
Off state input current (pin 2),
V
IN
= 0.4 V,
I
IN(off)
T
j
=-40..+150°C
On state input current (pin 2),
V
IN
= 3.5 V,
T
j
=-40..+150°C
Delay time for status with open load
after Input neg. slope (see diagram page 11)
--
1.5
0.8
0.2
8
10
50
15
4
--
--
--
--
22
--
50
--
2.4
--
--
30
50
400
100
kΩ
V
V
V
µA
µA
µs
µs
I
IN(on)
t
d(ST OL3)
Status invalid after positive input slope
t
d(ST SC)
(short circuit)
T
j=-40 ... +150°C:
Status output (open drain)
Zener limit voltage
T
j
=-40...+150°C,
I
ST
= +50 uA:
V
ST(high)
ST low voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
V
ST(low)
5.4
--
6
--
--
0.4
V
8
)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
Semiconductor Group
Page 5
2003-Oct-01
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
