BTS 247 Z
Speed TEMPFET
N-Channel
Enhancement mode
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection
Avalanche rated
1
5
VPT05166
Type
BTS 247 Z
G
Pin 1
A
Pin 2
K
Pin 4
S
Pin 5
Pin
1
2
3
4
5
Symbol
G
A
D
K
S
V
DS
55 V
R
DS(on)
18 m
Package
P-TO220-5-3
P-TO220-5-62
TO-220-5-43
Ordering Code
Q67060-S6001-A2
Q67060-S6002-A2
Q67060-S6006
D
Pin 3 and TAB
Temperature
Sensor
Function
Gate
Anode Temperature Sensor
Drain
Cathode Temperature Sensor
Source
1
2000-05-17
BTS 247 Z
Maximum Ratings
Parameter
Drain source voltage
Gate source voltage
Drain-gate voltage,
R
GS
= 20
k
Symbol
V
DS
V
Value
55
55
20
A
Unit
V
Nominal load current (ISO 10483)
V
GS
= 10 V,
V
DS
I
D(ISO)
Continuous drain current
1)
T
C
= 100 °C,
V
GS
= 4.5V
Pulsed drain current
Avalanche energy, single pulse
Power dissipation
T
C
= 25 °C
Operating temperature
2)
Peak temperature ( single event )
Storage temperature
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
1current limited by bond wire
2Note: Thermal trip temperature of temperature sensor is below 175°C
2
2000-05-17
I
D
= 12 A,
R
GS
= 25
V
GS
= 4.5 V,
V
DS
0.5 V,
T
C
= 85 °C
I
D
I
D puls
E
AS
P
tot
T
j
T
jpeak
T
stg
0.5 V,
T
C
= 85 °C
-40 ...+175
200
-55 ... +150
E
40/150/56
DGR
V
GS
12
19
33
180
1.3
120
J
W
°C
BTS 247 Z
Thermal Characteristics
Parameter
Characteristics
junction - case:
Thermal resistance @ min. footprint
Thermal resistance @ 6 cm
2
cooling area
1)
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 90 µA
I
D
= 250 µA
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= -40 °C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V,
T
j
= 25 °C
V
GS
= 20 V,
V
DS
= 0 V,
T
j
= 150 °C
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 12 A
V
GS
= 10 V,
I
D
= 12 A
R
DS(on)
-
-
22
15
28
18
I
GSS
-
-
10
20
100
100
m
I
DSS
-
-
-
-
0.1
-
0.1
1
100
nA
V
GS(th)
1.2
-
1.6
1.65
2
-
µA
V
(BR)DSS
55
-
-
V
Symbol
min.
Values
typ.
max.
Unit
Symbol
min.
R
thJC
R
th(JA)
R
th(JA)
-
-
-
Values
typ.
-
-
33
max.
1.25
62
40
Unit
K/W
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
3
2000-05-17
BTS 247 Z
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Dynamic Characteristics
Forward transconductance
V
DS
>2*I
D
*R
DS(on)max
,
I
D
= 33 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 45 A,
Rise time
R
G
= 3.6
t
d(on)
-
15
25
ns
C
rss
-
230
290
C
oss
-
410
515
g
fs
C
iss
10
-
-
1380
-
1730
S
pF
Symbol
min.
Values
typ.
max.
Unit
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 45 A,
Turn-off delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 45 A,
Fall time
R
G
= 3.6
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 45 A,
Gate Charge Characteristics
Gate charge at threshold
V
DD
= 40 V,
I
D
= 0.1 A,
V
GS
= 0 to 1 V
Gate charge at 5.0 V
V
DD
= 40 V,
I
D
= 45 A,
V
GS
= 0 to 5 V
Gate charge total
V
DD
= 40 V,
I
D
= 45 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 40 V,
I
D
= 45 A
4
2000-05-17
R
G
= 3.6
R
G
= 3.6
t
r
-
30
45
t
d(off)
-
30
45
t
f
-
20
30
Q
g(th)
Q
g(5)
Q
g(total)
V
(plateau)
-
-
-
-
2
35
60
4.5
3
55
90
-
nC
V
BTS 247 Z
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 90 A
Reverse recovery time
V
R
= 30 V,
I
F
=I
S
,
di
F
/dt
= 100 A/µs
Reverse recovery charge
V
R
= 30 V,
I
F
=I
S
,
di
F
/dt
= 100 A/µs
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET”.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family”.
All application notes are available at
http://www.infineon.com/tempfet/
Symbol
min.
I
S
I
FM
V
SD
t
rr
Q
rr
33
180
-
-
-
Values
typ.
-
-
1.1
75
0.15
max.
-
-
1.7
115
0.25
Unit
A
V
ns
µC
Forward voltage
I
AK(on)
= 5 mA,
T
j
= -40...+150 °C
I
AK(on)
= 1.5 mA,
T
j
= 150 °C
Sensor override
t
P
= 100 µs,
T
j
= -40...+150 °C
Forward current
T
j
= -40...+150 °C
Sensor override
t
P
= 100 µs,
T
j
= -40...+150 °C
V
AK(on)
-
-
-
I
AK(on)
-
-
1.3
-
-
-
-
1.4
0.9
10
5
600
V
mA
5
2000-05-17
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
