Si9424DY
January 2001
Si9424DY
Single P-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
•
-8.0 A, -20 V. R
DS(on)
= 0.024
Ω
@ V
GS
= -4.5 V
R
DS(on)
= 0.032
Ω
@ V
GS
= -2.5 V.
•
•
•
•
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
Applications
•
•
•
DC/DC converter
Load switch
Battery Protection
D
D
D
D
5
6
7
4
3
2
1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
Parameter
Ratings
-20
(Note 1a)
Units
V
V
A
W
±10
-8.0
-50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
9424
Device
Si9424DY
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2001
Fairchild Semiconductor International
Si9424DY Rev.A
Si9424DY
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
V
GS
= 0 V, I
D
= -250
µ
A
I
D
= -250
µ
A, Referenced to 25
°
C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0 V
Min
Typ Max Units
Off Characteristics
BV
DSS
∆
BV
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
-20
-24
-1
100
-100
V
mV/
°
C
µ
A
nA
nA
Gate-Body Leakage Current, Reverse V
GS
= -10 V, V
DS
= 0 V
(Note 2)
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
µ
A
I
D
= -250
µ
A, Referenced to 25
°
C
V
GS
= -4.5 V, I
D
= -8 A
V
GS
= -4.5 V, I
D
= -8 A ,T
J
=125
°
C
V
GS
= -2.5 V, I
D
= -7 A
V
GS
= -4.5 V, V
DS
= -5.0 V
V
DS
= -5 V, I
D
= -8 A
-0.4
-0.8
5
-1.5
V
mV/
°
C
Ω
0.019 0.024
0.026 0.039
0.027 0.032
-50
28
I
D(on)
g
FS
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
2260
500
205
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
Ω
8
15
98
35
16
27
135
55
33
ns
ns
ns
ns
nC
nC
nC
V
DS
= -10 V, I
D
= -8 A,
V
GS
= -5 V,
23
5.5
4
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
-2.1
-0.75
-1.2
A
V
Notes:
1:
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design.
a) 50° C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 125° C/W when
mounted on a 0.003 in
2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Si9424DY Rev.A
Si9424DY
Typical Characteristics
50
V
GS
= -4.5V
-I
D
, DRAIN CURRENT (A)
40
-3.5V
-2.5V
30
2.5
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
1.5
V
GS
= -2.5V
-3.0V
-3.5V
20
-2.0V
10
-1.5V
0
0
1
2
3
4
5
1
-4.5V
0.5
0
10
20
30
40
50
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.1
I
D
= -4A
0.08
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -8A
V
GS
= -10V
R
DS(ON)
, ON RESISTANCE (OHM)
1.4
1.2
0.06
1
0.04
T
J
= 125 C
0.02
25 C
o
o
0.8
0.6
-50
-25
0
25
50
75
100
o
0
125
150
1
1.5
2
2.5
3
3.5
4
4.5
5
T
J
, JUNCTION TEMPERATURE ( C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
20
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
16
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
-I
S
, REVERSE DRAIN CURRENT (A)
T
J
= -55 C
o
V
GS
= 0
10
1
0.1
0.01
0.001
0.0001
T
J
=125 C
25 C
-55 C
o
o
o
25 C
125 C
o
12
8
4
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si9424DY Rev.A
Si9424DY
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -8.0A
(continued)
3500
3000
CAPAACITANCE (pF)
V
DS
= -5V
-10V
-15V
2500
C
iss
2000
1500
1000
500
C
oss
C
rss
f= 1 MHz
V
GS
= 0V
4
3
2
1
0
0
5
10
15
20
25
0
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
R
DS(ON)
LIMIT
-I
D
, DRAIN CURRENT (A)
10ms
10
100ms
POWER (W)
50
100
µ
s
40
SINGLE PULSE
R
θ
JA
=125 C/W
T
A
=25 C
30
o
o
1s
10s
1
DC
20
0.1
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 125 C/W
T
A
= 25 C
o
o
10
0.01
0.1
1
10
100
0
0.001
0.01
0.1
1
10
100
1000
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.01
Single Pulse
r(t), NORMALIZED EFFECTIVE
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
Si9424DY Rev.A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
嵌入式系统
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