process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 10V).
Features
•
6.5 A, 20 V.
R
DS(ON)
= 0.030
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.043
Ω
@ V
GS
= 2.5 V.
•
Optimized for use in battery protection circuits
• ±10
V
GSS
allows for wide operating voltage range
•
Low gate charge
Applications
•
Battery protection
•
Load switch
•
Power management
D1
D1
D2
D2
S1
G1
5
6
7
Q1
4
3
2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
20
±10
(Note 1a)
Units
V
V
A
W
6.5
20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
-55 to +150
°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
9926
Device
Si9926DY
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2001
Fairchild Semiconductor International
Si9926DY Rev A (W)
Si9926DY
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 16 V,
V
GS
= 8 V,
V
GS
= –8 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
20
Typ
Max Units
V
Off Characteristics
14
1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 4.5 V,
I
D
= 6.5 A
I
D
= 5.4 A
V
GS
= 2.5 V,
V
GS
= 4.5 V, I
D
=6.5A, T
J
=125°C
V
GS
= 4.5 V,
V
DS
= 5 V
V
DS
= 5 V,
I
D
= 3 A
0.5
1
-3
0.025
0.036
0.035
1.5
V
mV/°C
0.030
0.043
0.050
Ω
I
D(on)
g
FS
15
11
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
700
175
85
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
8
10
18
5
16
18
29
10
10
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 3A,
7
1.2
1.9
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 1.3 A
(Note 2)
1.3
0.65
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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